VBsemi-Elec-VBZL80N06
| Part # | VBsemi-Elec-VBZL80N06 |
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VBZL80N06
N-Channel 60 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
6
0
V
• Package with low thermal resistance
• 100 % R
g
and UIS tested
R
DS(on)
V
GS
= 10 V
6
m
Ω
m
Ω
A
R
DS(on)
I
D
Configuration
V
GS
= 4.5 V
1
1
100
Single
TO-263
D
G
S
D
N-Channel MOSFET
S
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
60
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
a
100
65
Continuous Drain Current
I
D
T
C
= 125 °C
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
120
A
I
DM
I
AS
350
65
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
211
mJ
W
T
C
= 25 °C
220
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
70
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
40
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
Junction-to-Case (Drain)
R
thJC
0.65
Notes
a. Package
limited.
b. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
c. When
mounted on 1″ square PCB (FR4 material).
d. Parametric
verification ongoing.
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1
VBZL80N06
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0, I
D
= 250 μA
60
–
–
V
V
DS
= V
GS
, I
D
= 250 μA
2.0
4.0
V
DS
= 0 V, V
GS
V
GS
= 0 V
GS
= 0 V
=
20 V
–
–
–
100
nA
μA
A
V
DS
= 60 V
–
1
50
250
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
≥
5 V
–
–
V
GS
= 0 V
–
–
V
GS
= 10 V
120
–
V
GS
= 10 V
I
D
= 30 A
–
–
–
–
6
–
Drain-Source On-State Resistance
a
V
GS
= 10 V
V
GS
= 10 V
I
D
= 30 A, T
J
= 125 °C
12
15
94
–
m
Ω
S
I
D
= 30 A, T
J
= 175 °C
–
Forward Transconductance
b
Dynamic
b
V
DS
= 15 V, I
D
= 30 A
–
–
–
–
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
–
–
7000
715
360
145
–
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
pF
–
–
96
24
27
1
Q
gs
Q
gd
R
g
V
GS
= 10 V
V
DS
= 30 V, I
D
= 75 A
f = 1 MHz
–
nC
–
–
0.3
–
1.7
24
Ω
t
d(on)
t
r
t
d(off)
t
f
16
14
34
9
–
21
V
DD
= 30 V, R
L
= 0.4
Ω
I
D
≅
75 A, V
GEN
= 10 V, R
g
= 1
Ω
ns
–
51
–
14
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
A
V
450
1.5
Forward Voltage
V
SD
I
F
= 75 A, V
GS
= 0
0.9
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
VBZL80N06
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
225
200
175
150
125
100
75
150
120
90
60
30
0
V
GS
= 10 V thru 7 V
V
GS
= 6 V
T
C
= 25
°
C
50
V
GS
= 4 V
25
T
C
= 125
°
C
T
C
= -55 °C
6
0
0
4
8
12
16
20
0
2
4
8
10
70
60
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0.0
200
160
120
80
T
C
= -55 °C
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
40
T
C
= -55 °C
6
T
C
= 125
°
C
0
0
14
28
42
56
0
2
4
8
10
I
D
– Drain Current (A)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Transfer Characteristics
Transconductance
10 000
8000
6000
4000
2000
0
0.020
0.016
0.012
0.008
0.004
0.000
C
i
ss
V
GS
= 10 V
C
o
ss
C
r
ss
0
10
20
30
40
50
0
20
40
60
80
100
120
I
D
– Drain Current (A)
V
D
S
– Drain-to-
S
ource Voltage (V)
On-Resistance vs. Drain Current
Capacitance
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3
VBZL80N06
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
2.1
1.8
1.5
1.2
0.9
0.6
I
D
= 10 A
GS
= 10 V
V
I
D
= 110 A
D
S
= 20 V
8
V
6
4
2
0
-50 -25
0
25
50
75 100
125 150 175
0
20
40
60
80
100
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.05
0.04
0.03
0.02
0.01
0.00
T
J
= 150
°
C
1
0.1
T
J
= 25
°
C
T
J
= 150
°
C
0.01
T
J
= 25
°
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
S
D
–
S
ource-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
80
77
74
71
68
65
0.6
I
D
= 10 mA
0.2
-0.2
-0.6
-1.0
-1.4
-1.8
I
D
= 5 mA
I
D
= 250 μA
-50 -25
0
25
50
75 100
125 150 175
-50 -25
0
25
50
75 100
125 150 175
T
J
– Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
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4
VBZL80N06
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
I
DM
Limited
I
D
Limited
100 μ
s
1 m
s
100
10
10 m
s
100 m
s
1
s
, 10
s
, DC
Limited by R
D
S
(on)
*
1
0.1
BVD
SS
Limited
T
C
= 25
°
C
S
ingle Pul
s
e
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
1
0.1
0.01
0.001
0.0001
10
-4
10
-3
10
-2
10
-1
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
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5
VBZL80N06
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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6
VBZL80N06
TO-263 (D
2
PAK): 3-LEAD
-B-
A
E
c2
6
E1
K
-A-
E3
A
A
b2
b
c
Detail “A”
E2
e
M
M
A
0.010
PL
2
INCHES
MILLIMETERS
DIM.
A
MIN.
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.044
0.380
0.245
0.355
0.072
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.052
0.410
–
MIN.
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
1.321
10.414
–
0° – 5°
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
1.118
9.652
6.223
9.017
1.829
b
L1
b1
b2
DE
T
A
IL A (RO
T
A
T
ED 90°)
Thin lead
c*
Thick lead
Thin lead
b
c1
Thick lead
b1
c2
D
D1
D2
D3
D4
E
S
ECTION A-A
E1
E2
E3
e
0.375
0.078
9.525
1.981
0.100 BSC
2.54 BSC
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
Notes
L
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8
mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
–
0.002
–
0.050
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
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7
VBZL80N06
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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8
VBZL80N06
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
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T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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The information provided in this document and the company’s products without a license, express or implied,
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
