Microchip-Tech-APT150GN60LDQ4G
| Part # | Microchip-Tech-APT150GN60LDQ4G |
Download  | Microchip-Tech-APT150GN60LDQ4G |
600V
APT150GN60LDQ4(G)
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss.
Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
CE(ON)
temperature coef
fi
cient. A
built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault.
Low gate charge
simpli
fi
es gate drive design and minimizes losses.
•
600V Field Stop
• Trench
Gate: Low V
CE(on)
• Easy
Paralleling
• Intergrated
Gate Resistor: Low EMI, High Reliability
APT150GN60LDQ4(G)
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
All Ratings:
T =
25°C unless otherwise speci
fi
ed.
C
Parameter
Symbol
APT150GN60LDQ4(G)
UNIT
V
CES
Collector-Emitter Voltage
600
Volts
V
GE
I
C1
Gate-Emitter Voltage
±30
220
123
450
1
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
I
C2
Amps
2
Pulsed Collector Current
I
CM
Switching Safe Operating Area @ T
J
= 175°C
450A @ 600V
536
SSOA
P
D
T
o
tal Power Dissipation
Watts
°C
T
J
,T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to 175
300
T
L
Max. Lead
T
e
mp. for Soldering: 0.063″ from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
600
5.0
TYP
MAX
Units
V
(BR)CES
V
GE(TH)
Collector-Emitter Breakdown Voltage
(V
GE
= 0V,
I
C
= 4mA)
Gate Threshold Voltage
(V
CE
= V
GE
,
I
C
= 2400
μ
A, T
j
= 25°C)
Collector-Emitter On Voltage
(V
GE
= 15V,
I
C
= 150A, T
j
= 25°C)
Collector-Emitter On Voltage
(V
GE
= 15V,
I
C
= 150A, T
j
= 125°C)
5.8
6.5
Volts
1.05
1.45
1.65
1.85
V
CE(ON)
3
Collector Cut-off Current
(V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
75
I
CES
μ
A
3
Collector Cut-off Current
(V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2000
600
I
GES
Gate-Emitter Leakage Current
(V
GE
= ±20V)
Intergrated Gate Resistor
nA
R
G(int)
Ω
2
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT150GN60LDQ4(G)
Typical Performance Curves
Test Conditions
Capacitance
Characteristic
Symbol
C
ies
MIN
TYP
9200
350
300
9.5
MAX
UNIT
Input Capacitance
C
oes
C
res
Output Capacitance
pF
V
GE
= 0V,
V
CE
= 25V
f = 1 MHz
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
V
GEP
Q
g
V
Gate Charge
4
V
GE
= 15V
970
65
T
o
tal Gate Charge
V
CE
= 300V
I
C
= 150A
Q
ge
Q
gc
Gate-Emitter Charge
nC
Gate-Collector (“Mille
r
“
) Charge
510
T
J
= 175°C, R
G
= 4.3
Ω
8
, V
GE
15V, L
= 100
μ
H,V
CE
= 600V
=
SSOA
450
Switching Safe Operating Area
A
t
d(on)
t
r
t
d(off)
t
f
Inductive Switching (25°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
44
110
V
CC
= 400V
V
GE
= 15V
I
C
= 150A
ns
430
60
R
G
= 1.0
Ω
8
5
E
on1
E
on2
E
off
t
d(on)
t
r
Turn-on Switching Energy
8810
8615
4295
44
T
J
= +25°C
6
μ
J
Turn-on Switching Energy (Diode)
7
Turn-off Switching Energy
Inductive Switching (125°C)
CC
= 400V
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
V
110
ns
t
d(off)
t
f
V
GE
= 15V
480
95
I
C
= 150A
R
G
= 1.0
Ω
8
T
J
= +125°C
Current Fall Time
5
4
E
on1
E
on2
E
off
Turn-on Switching Energy
8880
9735
5460
6
5
μ
J
Turn-on Switching Energy (Diode)
6
7
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction to Case
(IGBT)
Min
Typ
Max
0.28
.30
Unit
Symbol
–
–
–
°C/W
R
θ
JC
Junction to Case
(DIODE)
–
2500
–
R
θ
JC
V
Isolatio
RMS Voltage
(50-60Hz Sinsoidal Waveform from
T
e
rminals to Mounting Base for 1 Min.)
n
Package Weight
6.1
–
gm
W
T
1
2
3
4
5
Continuous current limited by case temperature.
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, I
ces
includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss.
T
e
sted in inductive switching test circuit shown in
fi
gure 21, but with a Silicon Carbide diode.
6
E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
7
8
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
(See Figures 21, 23.)
R
G
is external gate resistance, not including R
G(int)
nor gate driver impedance.
(MIC4452)
Microsemi Reserves the right to change, without notice, the speci
fi
cations and information contained herein.
Typical Performance Curves
APT150GN60LDQ4(G)
400
350
300
250
200
150
100
50
350
V
= 15V
GE
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
12, 13 &15V
11V
300
250
200
150
100
10V
T
J
= 175°C
9V
8V
7V
50
0
0
0
0.5 1.0
1.5 2.0
2.5 3.0
3.5
0
5
10
15
20
25
30
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1,
Output Characteristics(T =
25°C)
FIGURE 2,
Output Characteristics
(T =
125°C)
J
J
350
16
14
12
250
μ
s PULSE
TEST<0.5 % DUTY
CYCLE
I
= 150A
= 25°C
C
T
J
300
250
200
150
100
50
T
J
= -55°C
T
J
= 25°C
V
V
= 120V
= 300V
CE
T
J
= 125°C
T
J
= 175°C
CE
10
8
V
= 480V
CE
6
4
2
0
0
0
2
4
6
8
10
12
14
0
200
400
600
800 1000
1200
V
, GATE-TO-EMITTER VOLTAGE
(V)
GATE CHARGE
(nC)
GE
FIGURE 3,
Transfer Characteristics
FIGURE 4, Gate
Charge
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
3.0
2.5
2.0
1.5
1.0
T
J
= 25°C.
250
μ
s PULSE TEST
<0.5 % DUTY CYCLE
I
= 300A
C
I
= 300A
C
I
= 150A
C
I
= 150A
C
I
= 75A
C
I
= 75A
C
0.5
0
V
GE
= 15V.
250
μ
s PULSE TEST
<0.5 % DUTY CYCLE
8
10
12
14
16
0
25
50
75 100 125 150
175
V
, GATE-TO-EMITTER VOLTAGE (V)
T ,
Junction Temperature (°C)
GE
J
FIGURE 5,
On State
Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
300
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
250
200
150
100
50
0.75
0.70
0
-50 -25
0
25 50
75 100 125
150
-50 -25
0
25 50 75 100
125 150 175
T ,
JUNCTION TEMPERATURE (°C)
T ,
CASE TEMPERATURE (°C)
J
C
FIGURE 7, Threshold Voltage
vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
APT150GN60LDQ4(G)
60
600
500
400
300
200
100
50
V
= 15V
GE
40
30
20
10
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 400V
T
J
= 25°C
,
or 125°C
G
= 1.0
Ω
L = 100
μ
H
V
CE
=
400V
R
G
=
1.0
Ω
L = 100
μ
H
R
0
I
0
I
30
70
110 150
190 230 270 310
30
, COLLECTOR
TO EMITTER CURRENT
(A)
CE
70
110 150 190 230 270 310
, COLLECTOR
TO EMITTER CURRENT
(A)
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
400
180
R
G
=
1.0
Ω
, L
=
100
μ
H, V
CE
=
400V
160
350
300
250
200
150
100
50
T
J
=
125°C, V
GE
=
15V
140
120
100
80
T
J
=
25 or 125°C,V
GE
=
15V
60
T
J
=
25°C, V
GE
=
15V
40
20
R
G
=
1.0
Ω
, L
=
100
μ
H, V
CE
=
400V
70 110 150 190
230 270 310
0
I
0
I
30
70
110 150 190 230 270 310
30
, COLLECTOR
TO EMITTER CURRENT
(A)
, COLLECTOR
TO EMITTER CURRENT
(A)
CE
CE
FIGURE 11,
Current Rise Time vs Collector Current
FIGURE 12,
Current Fall Time vs Collector Current
40,000
35,000
30,000
25,000
20,000
15,000
10,000
18,000
16,000
14,000
12,000
10,000
8,000
V
V
= 400V
= +15V
= 1.0
Ω
V
V
= 400V
= +15V
= 1.0
Ω
CE
GE
CE
GE
R
R
G
G
T
J
=
125°C
T
J
=
125°C
6,000
4,000
T
J
=
25°C
T
J
=
25°C
5,000
0
2,000
0
30
70
110 150 190 230 270 310
30
70
110 150 190 230 270 310
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn
Off Energy Loss vs Collector Current
40,000
70,000
60,000
50,000
40,000
30,000
20,000
V
V
T
= 400V
= +15V
V
V
= 400V
= +15V
= 1.0
Ω
CE
GE
CE
GE
E
300A
on2,
35,000
30,000
25,000
20,000
15,000
10,000
5,000
0
= 125°C
R
J
G
E
300A
on2,
E
300A
off,
E
300A
off,
E
150A
on2,
E
150A
on2,
E
150A
off,
E
150A
off,
10,000
0
E
E
75A
on2,
E
75A
on2,
75A
off,
E
75A
off,
0
5
10
15
20
0
25
50
75
100
125
R ,
GATE RESISTANCE
(OHMS)
T ,
JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses
vs. Gate Resistance
FIGURE 16, Switching Energy Losses
vs Junction Temperature
APT150GN60LDQ4(G)
Typical Performance Curves
20,000
10,000
500
500
400
300
200
C
ies
100
50
C
oes
C
res
100
0
10
0
10
20
30
40
50
0
100 200 300 400 500 600 700
V ,
COLLECTOR TO EMITTER VOLTAGE
CE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
Figure 17, Capacitance
vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.3
0.15
0.10
Note:
t
1
t
2
0.05
0
t
1
t
/
2
0.1
SINGLE PULSE
10
-3
Duty Factor D =
Peak T
= P
x Z
+ T
C
0.05
J
DM
θ
JC
10
-5
10
-4
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
50
10
F
max
= min (f
m
a
x
,
f
max2
)
RC MODEL
0.05
Junction
temp. (
°
C)
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
5
0.0964
0.184
0.00770
0.300
P
diss
–
P
cond
E
on2
+ E
off
f
max2
=
Power
(watts)
T
T
=
125
°
C
75
°
C
J
=
C
D = 50 %
T
J
– T
C
R
θ
JC
V
=
400V
P
diss
=
CE
R
= 1.0
Ω
G
1
30 50
70 90
110 130 150 170 190
Case temperature. (
°
C)
I ,
COLLECTOR CURRENT (A)
C
FIGURE 19b,
TRANSIENT THERMAL
IMPEDANCE MODEL
Figure 20, Operating
Frequency vs
Collector Current
APT150GN60LDQ4(G)
Gate Voltage
10%
t
d(on)
APT100DQ60
T
= 125°C
J
t
r
Collector Current
90%
V
CE
I
C
V
CC
5%
10%
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and De
fi
nitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
T
= 125°C
J
t
d(off)
90%
Collector Voltage
t
f
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and De
fi
nitions
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings:
T =
25°C unless otherwise specified.
C
Symbol
I
F
(AV)
Characteristic / Test Conditions
APT150GN60LDQ4(G)
UNIT
Maximum Average Forward Current
(T
C
= 103°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current
(T
J
= 45°C, 8.3ms)
120
188
600
I
F
(RMS)
Amps
I
FSM
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
UNIT
MIN
TYP
MAX
MAX
I
F
= 120A
2.00
2.44
1.70
Forward Voltage
V
F
I
F
= 240A
Volts
I
F
= 120A, T
J
= 125°C
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
MIN
TYP
34
UNIT
Test Conditions
t
rr
I
F
= 1A,
di
F
/dt = -100A/
µ
s, V
R
= 30
V
,
T
J
= 25
°
C
–
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
rr
–
47.3
I
F
= 120A,
di
F
/dt = -200A/
µ
s
V
R
= 400
V
,
T
C
= 25
°
C
Q
rr
nC
Amps
ns
–
–
–
–
–
113
4
I
RRM
–
–
Maximum Reverse Recovery Current
Reverse Recovery Time
t
rr
143
923
11
I
F
= 120A,
di
F
/dt = -200A/
µ
s
V
R
= 400
V
,
T
C
= 125
°
C
Q
rr
nC
Reverse Recovery Charge
I
RRM
t
rr
Maximum Reverse Recovery Current
Amps
ns
–
–
–
99
2631
45
Reverse Recovery Time
I
F
= 120A,
di
F
/dt = -1000A/
µ
s
Q
rr
nC
Reverse Recovery Charge
V
R
= 400
V
,
T
C
= 125
°
C
I
RRM
Amps
Maximum Reverse Recovery Current
0.35
0.30
D = 0.9
0.25
0.7
0.20
0.5
Note:
0.15
t
1
0.3
0.10
0.05
0
t
2
t
1
t
/
2
Duty Factor D =
Peak T
= P
x Z
0.1
+ T
C
J
DM
θ
JC
0.05
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
REC
T
A
NGULAR PULSE DUR
A
T
ION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
T
J
(°C)
T
C
(°C)
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
.1924
.13207
.1174
.01168
Dissipated Power
(Watts)
FIGURE 24b
,
T
RANSIENT
THERMAL IMPEDANCE MODEL
APT150GN60LDQ4(G)
DYNAMIC CHARACTERISTICS
300
300
250
200
150
100
T
V
=125
°
C
=400V
J
R
T
= 25
°
C
J
250
200
150
100
200A
100A
50A
T
= 175
°
C
J
T
= 125
°
C
J
50
0
50
0
T
= -55
°
C
2.5
J
0
0.5
1.0
1.5
2.0
3.0
0
200
400
600
800 1000 1200
V ,
ANODE-TO-C
A
T
HODE VO
L
TAGE (V)
Figure 25. Forward Current vs. Forward Voltage
-di /dt,
CURRENT R
A
T
E OF CHANGE(A/
µ
s)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
F
F
4000
3500
3000
2500
2000
1500
1000
500
60
T
V
=125
°
C
=400V
T
V
=125
°
C
=400V
J
J
200A
R
R
50
40
30
20
200A
50A
100A
100A
50A
10
0
0
0
200
400
600
800 1000
1200
0
200
400
600
800 1000
1200
-di /dt,
CURRENT R
A
T
E OF CHANGE (A/
µ
s)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
-di /dt,
CURRENT R
A
T
E OF CHANGE (A/
µ
s)
Figure 28. Reverse Recovery Current vs. Current Rate of Change
F
F
1.2
180
Duty cycle = 0.5
Q
rr
T
=175
°
C
J
160
140
120
100
80
t
rr
1.0
t
rr
0.8
I
RRM
0.6
Q
rr
0.4
0.2
0.0
60
40
20
0
0
25
50
75
100
125
150
25
50
75
Case
T
e
mperature (
°
C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature
100
125
150
175
T , JUNCTION TEMPER
A
T
URE (
°
C)
J
Figure 29. Dynamic Parameters vs. Junction Temperature
1400
1200
1000
800
600
400
200
0
1
10
100 200
V ,
REVERSE VO
L
TAGE (V)
R
Figure 31.
Junction Capacitance vs. Reverse Voltage
APT150GN60LDQ4(G)
V
r
di
F
/dt Adjust
+18V
0V
D.U.T.
t
Q
/
30
μ
H
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit
1
2
I
F
– Forward Conduction Current
1
4
5
di
F
/dt – Rate of Diode Current Change Through Zero Crossing.
I
RRM
– Maximum Reverse Recovery Current.
Zero
3
4
0.25 I
RRM
t
– Reverse
R
ecovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
3
rr
2
line through I
RRM
and 0.25
I
RRM
passes through zero.
5
Q
– Area Under the Curve Defined by I
RRM
and t
.
rr
rr
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Gate
Collector
/ Cathode
/ Anode
Emitter
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
