HL-80N06F
| Part # | HL-80N06F |
Download  | HL-80N06F |
N-Ch 60V Fast Switching MOSFETs
80
N
0
6
F
Green Device
Product Summary
Super Low Gate
Excellent CdV/dt effect decline
Advanced high cell density Trench
BVDSS
RDSON
ID
technology
60V
6mΩ
80A
100% EAS Guaranteed
PDFN5X6 Pin Configuration
Description
The 80N06F is the high cell density trenched
N-ch MOSFETs, which provides excellent
RDSON and and gate charge for most of the
synchronous buck converter applications.
The 80N06F meets the RoHS and Green
Product requirement 100% EAS guaranteed
with full function reliability approved.
Absolute Maximum Ratings
60
±25
80
V
V
A
A
V
DSS
GSS
Drain-Source Voltage
Gate-Source Voltage
V
T
T
C
C
= 25
℃
= 100
℃
I
D
Continuous Drain Current
52
I
DM
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
320
169
108
1.4
A
mJ
W
℃
/W
℃
EAS
P
R
, T
STG
D
T
C
= 25
℃
θ
JC
T
J
-55 to +175
01
N-Ch 60V Fast Switching MOSFETs
80N06F
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Off Characteristic
60
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250
μ
A
–
–
–
–
1
V
μ
A
nA
I
I
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
V
DS
=60V, V
GS
=0V,
DS
=0V, V
GS
=±20V
–
–
±100
On Characteristics
2
3
6
4
7
V
GS(th)
Gate Threshold Voltage
Static Drain-Source on-Resistance
note3
V
DS
=V
GS
, I
D
=250
μ
A
V
V
GS
=10V, I
D
=
30A
R
DS(on)
–
m
Ω
Dynamic Characteristics
4136
286
257
90
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=30V, V
GS
=0V,
C
oss
f=1.0MHz
C
rss
Q
Q
Q
g
V
DS
=30V, I
D
=30A,
9
gs
gd
V
GS
=10V
18
Switching Characteristics
9
7
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
t
r
V
R
DS
=30V, I
D
=30A,
40
15
t
d(o
f
f)
G
=1.8
Ω
, V
GS
=10V
t
f
Drain-Source Diode Characteristics and Maximum Ratings
M
a
x
i
mum Continuous Drain to Source Diode Forward Current
80
320
1.2
–
I
S
–
–
–
–
–
–
–
–
A
A
V
ns
nC
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
o
ltage
V
SD
V
GS
=0V, I
S
=30A
Body Diode Re
v
e
rse Reco
v
e
ry Time
33
trr
Qrr
I
F
=30A, dI/dt=100A/
μ
s
racteristics
Body Diode Re
v
e
rse Reco
v
e
ry Charge
46
–
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2.EAS condition : T
J
=25℃, V
DD
=30V, V
G
=10V, L=0.5mH, Rg=25Ω, IAS=26A
3.Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
N-Ch 60V Fast Switching MOSFETs
80N06F
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Curren
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6: Capacitance Characteristics
03
N-Ch 60V Fast Switching MOSFETs
8
0
N
0
6
F
Typical Performance Characteristics
Figure 7: Normalized Breakdown Voltage vs. Junction
T
F
e
i
m
g
u
p
r
er
8
a
:
t
u
N
r
o
e
r
malized on Resistance vs. Ju
0.1
Figure 9: Maximum Safe Operating Area
FFigure 10: Maximum Continuous Drain Curr
Figure 11:Maximum Continuous Drain Curren
Figure 10: Maximum Effective
Transient Thermal Impedance, Junction-to-Case
04
N-Ch 60V Fast Switching MOSFETs
80N06F
Package Mechanical Data-DFN5*6-8L-JQ Single
05
