Microchip-Tech-APTLGL325A1208G
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APTLGL325A1208G
V
CES
= 1200V
I
C
= 325A @ Tc = 80°C
Phase leg
Intelligent Power Module
Application
Motor control
Uninterruptible Power Supplies
Switched Mode Power Supplies
Amplifier
Features
Trench + Field Stop IGBT 4 Technology
– Low
voltage drop
– Low
leakage current
– Low
switching losses
– Soft
recovery parallel diodes
– Low
diode VF
– RBSOA
and SCSOA rated
Integrated Fail Safe IGBT Protection (Driver
)
–
–
Top Bottom input signals Interlock
Isolated DC/DC Converter
Low stray inductance
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
VBUS
0/VBUS
OUT
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very high noise immunity
(common mode rejection > 25kV/µs)
Galvanic Isolation: 3750V for the optocoupler
2500V for the transformer
5V logic level with Schmitt-trigger Input
Single V
DD
=5V supply required
Secondary auxiliary power supplies internally generated
(15V, -6V)
Optocoupler qualified to AEC-Q100 test guidelines
RoHS compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1 – 7
APTLGL325A1208G
All ratings @ T
j
= 25°C unless otherwise specified
1. Inverter
Power Module
Absolute maximum ratings
Symbol
Parameter
Max ratings
1200
Unit
V
V
CES
Collector – Emitter Breakdown Voltage
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
420
325
600
1500
I
C
Continuous Collector Current
A
I
CM
P
D
Pulsed Collector Current
Maximum Power Dissipation
W
RBSOA Reverse
Bias Safe Operating Area
T
j
= 150°C
600A @ 1150V
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
500
µA
V
GE
= 0V
I
CES
Zero Gate Voltage Collector Current
V
CE
= 1200V
750
1.85
2.2
2.2
V
DD
= V
IN
= 5V
I
C
= 300A
V
CE(sat)
Collector Emitter Saturation Voltage
V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
17.6
1.16
0.94
V
GE
= 0V
V
CE
= 25V
nF
ns
f = 1MHz
Inductive Switching (25°C)
T
r
T
f
Rise Time
Fall Time
30
70
V
DD
= V
IN
= 5V
V
Bus
= 600V ; I
C
= 300A
Inductive Switching (150°C)
T
r
T
f
Rise Time
40
80
34
ns
V
V
DD
= V
IN
= 5V
Bus
= 600V
Fall Time
E
on
Turn-on Switching Energy
I
C
= 300A
mJ
E
off
Turn-off Switching Energy
29
V
DD
= V
IN
= 5V; V
Bus
=900V
I
sc
Short Circuit data
1100
A
t
p
≤
10µs ; T
j
= 150°C
R
thJC
Junction to Case thermal resistance
0.1 °C/W
2 – 7
APTLGL325A1208G
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
V
RRM
I
RM
I
F
1200
V
µA
A
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
250
750
V
R
=1200V
360
1.7
1.65
155
2.2
V
F
Diode Forward Voltage
I
F
= 300A
V
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
µC
mJ
300
29
I
F
= 300A
V
R
= 600V
di/dt =7000A/µs
Q
rr
61
10.4
22
E
rr
Reverse Recovery Energy
R
thJC
Junction to Case Thermal Resistance
0.17 °C/W
2. Driver
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
DD
V
INi
Supply Voltage
Input signal voltage i=L, H
5.5
5.5
0.35
2
V
V
INi
= 0V, i =L & H
V
DD
=5V, V
INH
= /V
INL
;
F
out
= 55kHz
I
VDDmax
f
max
Maximum Supply current
A
kHz
Maximum Switching Frequency
55
Driver Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
4.5
Typ
5
Max
5.5
5.5
Unit
V
V
DD
Operating Supply Voltage
Maximum Input Voltage
Positive Going Threshold Voltage
V
INi(max)
V
INi (th+)
-0.5
5
V
3.2
i = L, H
V
INi(th-)
Negative Going Threshold Voltage
1
1
R
INi
T
d(on)
D
T
Input Resistance *
Turn On delay time
Built in dead time
k
Ω
Driver + IGBT
Driver + IGBT
1100
600
750
ns
T
d(off)
PWD
Turn Off delay time
Pulse Width Distortion
Propagation Delay Difference
between any two driver
Primary to Secondary Isolation
300
350
ns
PDD
V
ISOL
T
d(on)
– T
d(off)
-350
2500
V
RMS
* Low impedance guarantees good noise immunity.
Including built in dead time.
3 – 7
APTLGL325A1208G
3. Package
characteristics
Symbol Characteristic
Min Typ Max Unit
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
V
ISOL
T
J
T
OP
T
STG
T
C
4000
-40
-40
-40
-40
2
V
Operating junction temperature range
Operating Ambient Temperature
Storage Temperature Range
150
85
100
100
4.7
4
°C
Operating Case Temperature
To heatsink
For terminals
M5
M5
Torque Mounting
torque
Wt Package
Weight
N.m
g
2
550
4. LP8
Package outline
(dimensions in mm)
4 – 7
APTLGL325A1208G
Typical IGBT Performance Curve
Output Characteristics
Reverse Bias Safe Operating Area
600
640
V
DD
= 5V
500
V
IN
= 5V
T
J
=25°C
480
320
400
300
200
100
0
T
J
=150°C
160
T
J
=150°C
0
0
300
600
CE
(V)
900
1200
0
1
2
V
CE
(V)
3
4
V
Operating Frequency vs Collector Current
Energy losses vs Collector Current
80
64
48
32
16
0
60
50
40
30
20
10
0
V
CE
= 600V
V
CE
=600V
D=50%
V
V
IN
= 5V
DD
= 5V
V
V
DD
=5V
IN
= 5V
T
J
= 150°C
T
J
=150°C
Tc=75°C
Eoff
500
Limited by
internal gate
drive power
dissipation
Hard
switching
Eon
0
100
200
300
400
600
0
100
200
300
I
C
(A)
400
500
I
C
(A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0.5
0.3
0.08
0.06
0.04
0.02
0
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
5 – 7
APTLGL325A1208G
Typical diode Performance Curve
Forward Characteristic of diode
Energy losses vs Collector Current
32
600
T
J
=25°C
V
R
= 600V
500
400
300
T
J
= 150°C
24
16
8
200
T
J
=150°C
100
0
0
0
0.5
1
1.5
2
2.5
0
100
200
300
400
500
600
V
F
, Anode to Cathode Voltage (V)
I
F
(A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
D = 0.9
0.7
0.16
0.14
0.12
0.1
0.5
0.08
0.06
0.04
0.02
0
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
6 – 7
APTLGL325A1208G
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property
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inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
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disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
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intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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7 – 7
