STMicroelectronics-STL65N3LLH5
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STL65N3LLH5
N-channel 30
V
,
0
.0048
Ω
, 19 A, PowerFL
A
T
™ 5×6
S
T
r
ipFET™ V Power MOSFET
Features
R
DS(on)
max
<0.0058
Ω
19 A
(1)
Order code
V
DSS
30 V
I
D
STL65N3LLH5
1. The
value is rated according R
thj-pcb
1
2
3
■
R
DS(on)
* Q
g
industry benchmark
■
Extremely low on-resistance R
DS(on)
■
Very low switching gate charge
■
High avalanche ruggedness
4
PowerFLAT™ 5×6
■
Low gate drive power losses
Applications
Figure 1.
Internal schematic diagram
■
Switching applications
ꢉ
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Description
$
$
$
$
This device is an N-channel Power MOSFET
developed using STMicroelec
ronics’
S
T
r
ipFET™V technolog
y
.
T
he device has been
optimized to achieve
ery low on-state resistance,
contributing to an FOM that is among the best in
its class.
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3
ꢆ
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“OTTOM 6IEW
4
O
P 6IEW
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Table 1.
Order code
STL65N3LLH5
Device summary
Marking
Package
Packaging
T
a
pe and reel
65N3LLH5
PowerFL
A
T
™ 5×6
December 2011
Doc ID 14299 Rev 5
1/16
16
Contents
STL65N3LLH5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
Doc ID 14299 Rev 5
STL65N3LLH5
Electrical ratings
1
Electrical ratings
T
a
ble 2.
Symbol
Absolute maximum ratings
Parameter
Value
30
22
Unit
V
DS
V
GS
Drain-source voltage
V
V
Gate-source voltage
(1)
I
D
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (continuous) at T
pcb
= 25 °C
Drain current (continuous) at T
pcb
=100°C
Drain current (pulsed)
65
41
A
(1)
I
D
A
(2)
I
D
19
A
(2)
I
D
11.8
76
A
(3)
I
DM
A
(1)
P
TOT
T
o
tal dissipation at T
C
= 25°C
T
o
tal dissipation at T
pcb
= 25°C
Derating factor
60
W
W
W/°C
(2)
P
TOT
4
0.03
T
J
Operating junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. The
value is rated according to R
2. The
value is rated according to R
thj-c
thj-pcb
3. Pulse
width limited by safe operating area
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
R
thj-c
se
Thermal resistance junction-case
Thermal resistance junction-pcb
2.08
31.3
°C/W
°C/W
(1)
R
thj-pcb
1. When
mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
T
a
ble 4.
Symbol
Avalanche data
Parameter
Value
Unit
Not-repetitive avalanche current,
(pulse width limited by Tj Max)
I
AV
8.5
A
Single pulse avalanche energy
E
AS
180
mJ
(starting T
J
= 25 °C, I
D
= I
AV
, V
DD
= 24 V)
Doc ID 14299 Rev 5
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Electrical characteristics
STL65N3LLH5
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ.
Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 250 µA, V
GS
= 0
30
V
V
DS
= 30
V
,
Zero gate voltage drain
current (V
GS
= 0)
1
µA
µA
I
DSS
V
DS
= 30 V at T
C
= 125 °C
10
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
= 22
V
100
2.5
nA
V
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 250 µA
Gate threshold voltage
1
.65
V
GS
= 10
V
,
I
D
= 9.5 A
0.0048 0.0058
0.006 0.0075
Ω
Ω
Static drain-source on
resistance
V
GS
= 4.5
V
,
I
D
= 9.5 A
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
1500
295
39
pF
pF
pF
V
DS
=25
V
,
f
=1 MHz,
–
–
–
–
V
GS
=0
Reverse transfer
capacitance
Q
g
Q
gs
Q
gd
V
DD
=15
V
,
I
D
= 19 A
T
o
tal
e charge
Ga
-source charge
Gate-drain charge
12
4
nC
nC
nC
V
GS
=4.5 V
4.7
4/16
Doc ID 14299 Rev 5
STL65N3LLH5
Electrical characteristics
Min. Typ. Max.
Unit
Table 7.
Switching times
Parameter
Symbol
Test conditions
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
9.3
14.5
22.7
4.5
ns
ns
ns
ns
V
DD
=15
V
,
I
D
= 9.5 A,
R
G
=4.7
Ω
,
V
GS
=10 V
–
–
T
u
rn-off delay time
Fall time
T
a
ble 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I
SD
Source-drain current
–
–
–
19
76
A
A
V
(1)
Source-drain current (pulsed)
Forward on voltage
I
SDM
(2)
I
SD
= 19 A, V
GS
=0
1.1
V
SD
t
rr
I
SD
= 19 A,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
25
17.5
1.4
ns
nC
A
Q
rr
di/dt = 100 A/µs,
–
V
DD
=25
V
,
T
j=150 °C
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration=300µs, duty cycle 1
Doc ID 14299 Rev 5
5/16
Electrical characteristics
STL65N3LLH5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
HV42910
I
D
(A)
T
J
=150°C
T
C
=25°C
100
10
1
S
ingle p
u
l
s
e
10 m
s
100 m
s
1
s
0.1
0.01
0.1
1
10
V
S
D
(V)
Figure 4.
Output characteristics
Figure 5.
Transfer
aracteristics
Figure 6.
Normalized B
VDSS
vs temperature
Figure 7.
Static drain-source on resistance
HV42990
HV42950
BV
D
SS
R
D
S
(on)
(
Ω
)
(norm)
1.1
I
D
=17.5A
V
G
S
=10V
5
1.0
8
I
D
=1 mA
1.06
1.04
1.02
1
4.5
4
3
.5
3
0.9
8
0.96
0.94
0.92
22
27
-55 –
3
0
12
17
7
-5
20 45
70
95 120
2
I
D
(A)
145
T
J
(°C)
6/16
Doc ID 14299 Rev 5
STL65N3LLH5
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Capacitance variations
HV429
3
0
HV42940
C(pF)
V
G
S
(V)
f=1MHz
G
S
=0
I
V
V
D
=14 A
12
V
G
S
=5 V
DD
=15 V
2000
1500
1000
500
0
10
8
Ci
ss
6
4
Cr
ss
Co
ss
2
0
0
5
10
15
20
Qg(nC)
0
10
20
C(pF)
Figure 10.
Normalized gate threshold voltage
Figure 11.
Normalized on re
stance vs
vs temperature
temperature
HV42970
HV42960
R
D
S
(on)
V
G
S
(th)
(norm)
(norm)
1.
8
1.6
1.
1.2
1
1.2
1
I
D
=250
µ
A
I
8
.5 A
V
G
S
=10 V
0.
8
0.6
0.4
0.2
0
0.
8
0.6
0.4
0.2
0
-55
45 7
95 120
145 T
J
(°C)
–
3
0 -5
20
-55 –
3
0 -5
20 45
70 95
T
J
(°C)
120 145
Figure 12.
Source
drain diode forward
characteristics
HV429
8
0
V
S
D
(V)
0.9
T
J
=-55 °C
0.
8
0.7
0.6
0.5
0.4
T
J
=25 °C
T
J
=150 °C
0
5
10
15
I
S
D
(A)
Doc ID 14299 Rev 5
7/16
Test circuits
STL65N3LLH5
3
Test circuits
Figure 13.
Switching times test circuit for
resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k
Ω
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 15.
Test circuit for inductive load
switching and diode recovery times
Figure 16.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 17.
Unclamped inductive waveform
Figure 18.
Switching time waveform
t
on
td
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
8/16
Doc ID 14299 Rev 5
STL65N3LLH5
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
is an ST trademark.
Doc ID 14299 Rev 5
9/16
Package mechanical data
STL65N3LLH5
Table 9.
Dim.
PowerFLAT™ 5×6 type C-B mechanical data
mm
Min.
Typ.
Max.
A
A1
A3
b
0.80
0
0.83
0.02
0.20
0.40
5.00
4.75
4.20
6.00
5.75
3.48
2.63
1
7
0.80
0.93
0.05
0.35
4.15
0.47
4.25
D
D1
D2
E
E1
E2
E4
e
3.43
2.58
3.53
2.68
L
0.70
0.90
10/16
Doc ID 14299 Rev 5
STL65N3LLH5
Figure 19.
PowerFLAT™ 5×6 type C-B drawing
Bottom View
Package mechanical data
e/2
e
1
PIN 1 IDENTIFIC
A
T
ION
EXPO
S
ED
P
A
D
E2
E4
b 8
x
D2/2
D2
T
o
p View
D/2
E/2
E1
E
PIN 1 ID
IFIC
A
T
ION
1
D1
D
0.1
C
A
3
S
E
A
T
ING PLANE
A
A1
C
0.0
8
C
72
8
646
3
_Rev_H
Doc ID 14299 Rev 5
11/16
Package mechanical data
STL65N3LLH5
Table 10.
PowerFLAT™ 5×6 type S-C mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
0.80
0.02
1.00
0.05
0.25
0.30
0.50
D
5.20
6.15
E
D2
E2
e
4.11
3.50
4.31
3.70
1.27
0.65
e1
L
0.715
1.05
1.015
1.35
K
12/16
Doc ID 14299 Rev 5
STL65N3LLH5
Figure 20.
PowerFLAT™ 5×6 type S-C mechanical data
Package mechanical data
4
O
P VIEW
“OTTOM VIEW
3IDE VIEW
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Doc ID 14299 Rev 5
13/16
Package mechanical data
STL65N3LLH5
Figure 21.
PowerFLAT™ 5×6 recommended footprint (dimensions in mm)
5.
3
5
4.41
0.62
1.27
Footprint
14/16
Doc ID 14299 Rev 5
STL65N3LLH5
Revision history
5
Revision history
T
a
ble 11.
Document revision history
Date
Revision
Changes
04-Jan-2007
01-Apr-2008
07-May-2008
23-Sep-2008
1
2
3
4
First release
Document status promoted from preliminary data to datasheet.
Figure 7: Static drain-source on resistance
has been modified.
Section 4: Package mechanical data
has been updated.
Minor text changes.
02-Dec-2011
5
Doc ID 14299 Rev 5
15/16
STL65N3LLH5
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Doc ID 14299 Rev 5
