STMicroelectronics-X00602MA-5AL2
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X006
Datasheet
0.8 A 600 V logic level gate thyristor SCR in TO-92 package
A
Features
•
•
•
•
On-state RMS current, I
T(RMS)
0.8 A
Repetitive peak off-state voltage 600 V
Triggering gate current 200 μA
ECOPACK2
compliant
G
K
Applications
A
A
G
G
K
K
•
•
•
•
•
•
Limited gate current topologies
TO-92 (preform)
TO-92 (straight)
Ground fault circuit interrupters
Overvoltage crowbar protection in power supplies
Protection in electronic ballasts
Capacitive discharge ignitions
Ignitors (lighting, oven…)
Product status link
Description
Available in through hole package, the X006 SCR can be used as on/off function in
applications where topology does not offer high current for gate triggering.
Product summary
This device is optimized in forward voltage drop and inrush current capabilities for
reduced power losses and high reliability in harsh environments.
I
0.8 A
600 V
T(RMS)
V
/V
DRM RRM
Thanks to its highly sensitive triggering current the X006 is suitable for the
applications such as breaker, ground fault interrupter, overvoltage crowbar protection
of power supplies or capacitive ignition circuits.
I
200 µA
125 °C
GT
T max.
j
DS1704
–
Rev 6
–
January 2022
For further information contact your local STMicroelectronics sales office.
X006
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values, T
j
= 25 °C unless otherwise specified)
Symbol
Parameters
On-state RMS current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current,
Value
0.8
0.5
10
Unit
A
I
T =
83 °C
TO-92
TO-92
T(RMS)
L
I
T =
83 °C
L
A
T(AV)
t =
8.3 ms
p
I
T =
25 °C
j
A
TSM
T initial
= 25 °C
j
t =
10 ms
p
9
2
2
2
t =
10 ms
p
T =
25 °C
j
0.4
I t
I t
value for fusing
A s
Critical rate of rise of on-state current
T =
125 °C
j
dl/dt
F = 60 Hz
50
A/µs
I
= 2 x I
, t
≤ 100 ns
GT r
G
I
t =
20 µs
p
T =
125 °C
j
Peak gate current
1
A
GM
P
T =
125 °C
j
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
0.1
W
°C
°C
G(AV)
T
-40 to +150
-40 to +125
stg
T
j
Table 2.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Parameters
Symbol
Value Unit
Min.
15
µA
I
GT
V
= 12
V
, R
=
1
40 Ω
Max.
Max.
Min.
Min.
Max.
Max.
Min.
200
D
L
V
0.8
0.2
5
V
V
GT
V
V
I
= V
, R
= 3.3 kΩ, R
= 1 kΩ, T
= 125 °C
DRM L
GK j
GD
D
V
= 10 µA
RG
RG
I
I =
50 mA, R
= 1 kΩ
T
5
mA
mA
H
GK
I
I
= 1 mA, R
= 1 kΩ
6
L
G
GK
V
D
= 67 % V
, R
= 1 kΩ, T
= 125 °C
dV/dt
25
V/µs
DRM
GK
j
Table 3.
Static electrical characteristics
Test conditions
Symbol
Value Unit
V
I
= 1 A, t
= 380 µs
TM p
25 °C
125 °C
125 °C
25 °C
Max. 1.35
Max. 0.85
V
V
TM
V
Threshold on-state voltage
Dynamic resistance
TO
R
Max.
245
1
mΩ
d
V
= V
, R
= 1 kΩ
I
DRM
DRM
RRM
RRM
GK
DRM
Max.
µA
I
V
= V
, R
= 1 kΩ
125 °C
100
RRM
GK
Table 4.
Thermal resistance
Parameters
Max.
value
Symbol
Unit
R
Junction to leads (DC)
TO-92
TO-92
70
th(j-l)
°C/W
R
Junction to ambient (DC)
150
th(j-a)
DS1704
–
Rev 6
page 2/9
X006
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1.
Maximum average power dissipation versus
average on-state current
Figure 2.
Average and DC on-state current versus lead
temperature (TO-92)
P(W)
I
(A)
T(AV)
0.6
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
α = 180°
0.5
TO-92
D.C.
0.4
0.3
α = 180°
0.2
360°
0.1
α
T (°C)
l
I
(A)
T(AV)
0.0
0
25
50
75
100
125
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Figure 3.
Average and DC on-state current versus ambient
Figure 4.
Relative variation of thermal impedance junction
temperature (epoxy printed circuit board FR4, copper
thickness = 35 µm, S
CU
= 0.5 cm2)(TO-92)
to ambient versus pulse duration (PCB FR4, copper
thickness = 35 µm, S
CU
= 0.5 cm2)(TO-92)
I
(A)
Z
/R
T(AV)
th(j-a) th(j-a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.00
0.10
0.01
TO-92
S
CU
= 0.5 cm
2
TO-92
S
CU
= 0.5 cm
2
D.C.
α = 180°
T
amb
(°C)
t (s)
p
0
25
50
75
100
125
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5.
Relative variation of gate trigger, holding and
latching current versus junction temperature (typical
values)
Figure 6.
Relative variation of holding current versus
gate-cathode resistance (typical values)
I [R
] / I
[R =1kΩ]
H
GK
H
GK
I
,I ,I [T
] / I
,I ,I [T
=25°C]
H L
j GT
H L
j
GT
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
H
& I
L
I
GT
R
(kΩ)
GK
T (°C)
j
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90
100 110 120 130
DS1704
–
Rev 6
page 3/9
X006
Characteristics (curves)
Figure 7.
Relative variation of static dV/dt immunity
versus gate-cathode resistance (typical values)
Figure 8.
Relative variation of static dV/dt immunity
versus gate-cathode capacitance (typical values)
dV/dt[C
] / dV/dt[R
=1kΩ]
GK
GK
dV/dt[R
] / dV/dt[ R
=1kΩ]
GK
GK
100
10
1
100.0
10.0
1.0
V
D
= 0.67 x V
DRM
R
GK
= 1kΩ
V
D
= 0.67 x V
DRM
R
(kΩ)
GK
C
(nF)
GK
0.1
1.0E-01
1.0E+00
1.0E+01
1
10
Figure 10.
Non-repetitive surge peak on-state current for
sinusoidal pulse (t
p
< 10 ms)
Figure 9.
Surge peak on-state current versus number of
cycles
I (A)
TSM
I
(A)
TSM
1.E+02
1.E+01
1.E+00
1.E-01
10
9
8
7
6
5
4
3
2
1
0
T
j
initial = 25 °C
I
TSM
t
p
= 10 ms
One cycle
Non repetitive
T
j
initial = 25 °C
Repetitive
T
C
= 83 °C
t (ms)
p
Number of cycles
1
10
100
1000
0.01
0.10
1.00
10.00
Figure 11.
On-state characteristics (maximum values)
I
(A)
TM
10.00
1.00
0.10
0.01
T
j
max.:
V
t0
= 0.85 V
R
d
= 245 mΩ
T
j
= 125 °C
T
j
= 25 °C
V
(V)
TM
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
DS1704
–
Rev 6
page 4/9
X006
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
2.1
TO-92 with straight leads (plastic) package information
•
Lead free plating + halogen-free molding resin
•
Epoxy meets UL94, V0
Figure 12.
TO-92 with straight leads (plastic) package outline
c
A
a
B
C
b
D
E
F
Table 5.
TO-92 with straight leads (plastic) package mechanical data
Dimensions
Typ.
Ref.
Millimeters
Typ.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
a
1.35
0.048
4.70
0.190
2.54
0.100
0.050
4.40
0.172
0.554
12.70
3.70
0.50
0.152
0.022
b
1.27
c
0.48
0.019
1. Inches
dimensions given for information
DS1704
–
Rev 6
page 5/9
X006
TO-92 with leads preform (plastic) package information
2.2
TO-92 with leads preform (plastic) package information
•
Lead free plating + halogen-free molding resin
•
Epoxy meets UL94, V0
Figure 13.
TO-92 with leads preform (plastic) package outline
Table 6.
TO-92 with leads preform (plastic) package mechanical data
Dimensions
Typ.
Ref.
Millimeters
Typ.
Min.
1.30
7.69
2.40
30°
Max.
2.00
9.69
2.90
50°
Min.
0.051
0.303
0.094
30°
Max.
0.079
0.381
0.114
50°
G
H
d
1.70
0.067
θ
40°
40°
1. Inches
dimensions given for information
DS1704
–
Rev 6
page 6/9
X006
Ordering information
3
Ordering information
Figure 14.
Ordering information scheme
006 02
X
M
A
1AA2
Sensitive SCR series
Current
006 = 0.8 A
Sensitivity
02 = 200 µA
Voltage
M = 600 V
Pac
k
a
ge
A = TO-92
Pac
k
i
ng mode
1AA2 = Bulk (TO-92 with straight leads)
2AL2 = Ammopack (TO-92 with leads preform)
5AL2 =
T
a
pe and reel (TO-92 with leads preform)
Table 7.
Ordering information
Order code
Marking
Package
Weight
0.2 g
Base qty.
2500
Delivery mode
Bulk
X00602MA 1AA2
X00602MA 2AL2
X00602MA 5AL2
TO-92 straight leads
X0602 MA
0.2 g
2000
Ammopack
T
a
pe and reel
TO-92 leads preform
0.2 g
2000
DS1704
–
Rev 6
page 7/9
X006
Revision history
Table 8.
Document revision history
Date
Revision
Changes
26-May-2009
03-May-2012
3
4
Last update.
SOT-223 package added.
Reformatted to current standards. Device X00605 removed. Updated
dimensions in
T
a
ble 5.
03-Sep-2021
18-Jan-2022
5
6
DS1704
–
Rev 6
page 8/9
X006
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DS1704
–
Rev 6
page 9/9
