STMicroelectronics-ST13003D-K
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ST13003D-K
High voltage fast-switching NPN power transistor
Features
■
High voltage capability
■
Low spread of dynamic parameters
■
Minimum lot-to-lot spread for reliable operation
■
Very high switching speed
■
Integrated antiparallel collector-emitter diode
1
2
3
Applications
SOT-32
■
Electronic ballast for fluorescent lighting
Description
Figure
.
Internal schematic diagram
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Table 1.
Order code
ST13003D-K
Device summary
Marking
Package
Packaging
13003D
SO
T
–
32
Bag
September 2009
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8
Electrical ratings
ST13003D-K
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
CES
V
CEO
V
EBO
I
C
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0, I
B
= 0.75 A, t
P
< 10 µs)
Collector current
700
400
V
V
V
(BR)EBO
1.5
V
A
I
CM
Collector peak current (t
P
< 5 ms)
Base current
3
A
I
B
0.75
1.5
A
I
BM
Base peak current (t
P
< 5 ms)
T
o
tal dissipation at T
c
= 25 °C
Storage temperature
A
P
TOT
T
STG
T
J
40
W
°C
°C
-55 to 150
150
Max. operating junction temperature
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ST13003D-K
Electrical characteristics
2
Electrical characteristics
T
= 25 °C unless otherwise specified
case
Table 3.
Symbol
Electrical characteristics
Parameter
Test conditions
CE
= 700 V
Min. Typ. Max. Unit
Collector cut-off current
(V
BE
= 0)
V
1
5
mA
mA
I
CES
V
CE
= 700 V
T
c
= 125 °C
Emitter-Base breakdown
voltage (I
C
= 0)
V
(BR)EBO
I
E
= 10 mA
9
18
V
Collector-emitter
sustaining voltage (I
B
= 0)
(1)
V
CEO(sus)
I
C
= 10 mA
400
V
I
C
= 0.5 A
_
I
B
= 0.1 A
0.5
1
V
V
V
Collector-emitter
saturation voltage
(1)
V
CE(sat)
I
C
= 1 A
_ _
I
B
= 0.25 A
I
C
= 1.5 A
_ _
I
B
= 0.5 A
3
I
C
= 0.5 A
_
I
B
= 0.1 A
1
V
V
Base-emitter saturation
voltage
(1)
V
BE(sat)
I
C
= 1 A
_ _
I
B
= 0.25 A
1.2
I
C
= 0.5 A
I
C
= 1 A
V
CE
= 2 V
V
CE
= 2 V
8
5
20
25
h
FE
DC current gain
Resistive load
Rise time
C
= 125 V
I
B1
= 0.2 A
T
p
= 25 µs
I
C
= 1 A
t
r
t
s
t
f
1
4
µs
µs
µs
I
B2
= -0.2 A
Storage time
Fall time
0.7
I
C
= 1 A
I
B1
= 0.2 A
L = 50 mH
Inductive load
Sto
ge time
V
BE
= -5 V
V
Clamp
= 300 V
t
s
0.8
µs
V
V
F
Diode forward voltage
I
F
= 0.5 A
1.5
1. Pulse
test: pulse duration 300
≤
µs, duty cycle
≤
2 %
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Electrical characteristics
ST13003D-K
2.1
Test circuits
Figure 2.
Inductive load switching test circuit
1. Fast
electronic switch
2. Non-inductive
resistor
3. Fast
recovery rectifier
Figure 3.
Resistive load switching test circuit
1. Fast
electronic switch
2. Non-inductive
resistor
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Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
®
ECO
P
A
CK is
an ST trademark.
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Package mechanical data
ST13003D-K
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ST13003D-K
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