Microchip-Tech-2N5154L

TECHNICAL DATA SHEET  

6 Lake Street, Lawrence, MA 01841  

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  

NPN POWER SILICON TRANSISTOR  

Qualified per MIL-PRF-19500/544  

DEVICES  

LEVELS  

JAN  

JANTX  

JANTXV  

JANS  

2N5152  

2N5152L  

2N5152U3 2N5154U3  

2N5154  

2N5154L  

ABSOLUTE MAXIMUM RATINGS

(T

C

= +25°C unless otherwise noted)  

Parameters / Test Conditions  

Symbol  

Value  

Unit  

Collector-Emitter Voltage  

V

CEO  

V

CBO  

V

EBO  

I

C  

80  

100  

5.5  

2.0  

Vdc  

Vdc  

Vdc  

Adc  

Collector-Base Voltage  

Emitter-Base Voltage  

Collector Current  

Total Power Dissipation

(1)  

@ T

A

= +25°C  

@ T

C

= +25°C  

1.0  

10  

P

T  

W

TO-5  

2N5152L, 2N5154L  

Operating & Storage Junction Temperature Range  

Thermal Resistance, Junction-to Case

(1)  

T

J

, T

stg  

R

θ

JC  

-65 to +200  

°C  

10  

1.7 (U3)  

°C/W  

Note:  

1) See

 

19500/544 for thermal derating curves.  

2) This

 

value applies for P

W

≤

8.3ms, duty cycle

≤

1%.  

ELECTRICAL CHARACTERISTICS

(T

A

= +25°C, unless otherwise noted)  

Parameters / Test Conditions  

OFF CHARACTERTICS  

Symbol  

Min.  

Max.  

Unit  

TO-39 (TO-205AD)  

2N5152, 2N5154  

Collector-Emitter Breakdown Voltage  

I

C

= 100mAdc, I

B

= 0  

V

(BR)CEO  

80  

Vdc  

Emitter-Base Cutoff Current  

V

EB

= 4.0Vdc, I

C

= 0  

I

EBO  

1.0  

1.0  

µAdc  

mAdc  

V

EB

= 5.5Vdc, I

C

= 0  

Collector-Emitter Cutoff Current  

V

CE

= 60Vdc, V

BE

= 0  

I

CES  

1.0  

1.0  

µAdc  

mAdc  

V

CE

= 100Vdc, V

BE

= 0  

Collector-Emitter Cutoff Current  

I

CEO  

50  

µAdc  

V

CE

= 40Vdc, I

B

= 0  

ON CHARACTERTICS  

Forward-Current Transfer Ratio  

I

C

= 50mAdc, V

CE

= 5Vdc  

U-3  

20  

50  

30  

70  

—  

—  

90  

2N5152  

2N5154  

2N5152  

2N5154  

2N5152U3, 2N5154U3  

h

FE  

I

C

= 2.5Adc, V

CE

= 5Vdc  

200  

T4-LDS-0039 Rev. 1 (080797)  

Page 1 of 2  

TECHNICAL DATA SHEET  

6 Lake Street, Lawrence, MA 01841  

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  

NPN POWER SILICON TRANSISTOR  

Qualified per MIL-PRF-19500/544  

ELECTRICAL CHARACTERISTICS (con’t)  

Parameters / Test Conditions  

I

C

= 5Adc, V

CE

= 5Vdc  

Symbol  

Min.  

Max.  

Unit  

2N5152  

2N5154  

20  

40  

h

FE  

Collector-Emitter Saturation Voltage  

I

C

= 2.5Adc, I

B

= 250mAdc  

I

C

= 5.0Adc, I

B

= 500mAdc  

0.75  

1.5  

V

CE(sat)  

Vdc  

Vdc  

Vdc  

Base-Emitter Voltage Non-Saturation  

I

C

= 2.5Adc, V

CE

= 5Vdc  

V

BE  

1.45  

Base-Emitter Saturation Voltage  

I

C

= 2.5Adc, I

B

= 250mAdc  

I

C

= 5.0Adc, I

B

= 500mAdc  

1.45  

2.2  

V

BE(sat)  

DYNAMIC CHARACTERISTICS  

Parameters / Test Conditions  

Symbol  

Min.  

Max.  

Unit  

Magnitude of Common Emitter Small-Signal Short-Circuit  

Forward Current Transfer Ratio  

I

C

= 500mAdc, V

CE

= 5Vdc, f = 10MHz  

2N5152  

2N5154  

6

7

|h

fe

|  

Small-signal short Circuit Forward-Current Transfer Ratio  

I

C

= 100mAdc, V

CE

= 5Vdc, f = 1KHz  

h

fe  

2N5152  

2N5154  

20  

50  

Output Capacitance  

C

obo  

250  

pF  

V

CB

= 10Vdc, I

E

= 0, f = 1.0MHz  

SWITCHING CHARACTERISTICS  

Parameters / Test Conditions  

Symbol  

Min.  

Max.  

Unit  

Turn-On Time  

I

C

= 5Adc, I

B1

= 500mAdc  

t

on  

0.5  

μ

s  

Turn-Off Time  

R

L

= 6

Ω  

t

off  

1.5  

1.4  

0.5  

μ

s  

Storage Time  

Fall Time  

I

B2

= -500mAdc  

t

s  

t

f  

μ

s  

μ

s  

V

BE(OFF)

= 3.7Vdc  

SAFE OPERATING AREA  

DC Tests  

T

C

= +25°C, 1 Cycle, t

P

= 1.0s  

Test 1  

V

CE

= 5.0Vdc, I

C

= 2.0Adc  

Test 2  

V

CE

= 32Vdc, I

C

= 310mAdc  

Test 3  

V

CE

= 80Vdc, I

C

= 12.5mAdc  

T4-LDS-0039 Rev. 1 (080797)  

Page 2 of 2