STMicroelectronics-STP1N105K3
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STF1N105K3, STFW1N105K3,
STP1N105K3
N-channel 1050
V
, 8
Ω
typ., 1.4 A SuperMESH3™
Power MOSFET in TO-220F
P
,
T
O-3PF and TO-220 packages
Datasheet — production data
Features
TAB
R
DS(on)
max
Order codes
V
DS
I
D
P
TOT
1
3
2
3
STF1N105K3
1
2
20 W
60 W
1
STFW1N105K3 1050
V
STP1N105K3
11
Ω
1.4 A
TO-220FP
TO-3PF
■
Gate charge minimized
■
■
■
Extremely large avalanche performance
100% avalanche tested
3
2
1
Very low intrinsic capacitance
TO-220
Applications
Figure 1.
Internal schematic diagram
■
Switching applications
Description
‘ꢅꢆꢇ
These SuperMESH3™ Power MOSFE
T
s
a
re the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
*ꢅꢁꢇ
6ꢅꢈꢇ
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Table 1.
Device summary
Order codes
Marking
Package
TO-220FP
Packaging
STF1N105K3
STFW1N105K3
STP1N105K3
1N105K3
TO-3PF
TO-220
Tube
January 2013
Doc ID 023509 Rev 2
1/18
This is information on a product in full production.
18
Contents
STF1N105K3, STFW1N105K3, STP1N105K3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
Electrical ratings
1
Electrical ratings
.
Table 2.
Absolute maximum ratings
Parameter
Value
Symbol
Unit
TO-220FP TO-3PF
TO-220
V
DS
V
GS
I
D
Drain source voltage
1050
± 30
V
V
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
1.4
(1)
0.9
(1)
5.6
(1)
20
1.4
0.9
5.6
60
A
A
I
D
(2)
I
DM
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
W
Max current during repetitive or single
pulse avalanche (pulse width limited by
1.2
A
mJ
V
T
jmax
)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
IAR
, V
DD
= 50 V)
E
AS
130
Insulation withstand voltage (RMS) from
all three leads to external heat sink
V
ISO
2500
3500
(t = 1 s; TC = 25 °C)
dv/dt
(3)
Peak diode recovery voltage slope
6
V/ns
°C
T
j
T
stg
Operating junction temperature
Storage temperature
– 55 to 150
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
I
≤
1.4 A, di/dt
≤
100 A/
μ
s, V
= 80% V
, V
peak
≤
V
(BR)DSS DS
(BR)DSS.
SD
DD
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-220FP
6.25
TO-3PF
TO-220
Rthj-case Thermal
resistance junction-case max
Rthj-amb Thermal
resistance junction-amb max
2.08
°C/W
°C/W
62.50
50
62.50
Doc ID 023509 Rev 2
3/18
Electrical characteristics
STF1N105K3, STFW1N105K3, STP1N105K3
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
1050
V
V
DS
= 1050
V
,
V
DS
= 1050
V
, T
c
=125 °C
1
50
μ
A
μ
A
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
= ± 20 V
±50
4.5
11
μ
A
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 50
μ
A
V
GS
= 10 V, I
D
= 0.6 A
2
3
8
Static drain-source on-
resistance
R
DS(on)
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
C
iss
Input capacitance
Output capacitance
180
15
pF
pF
C
oss
V
DS
=100
V
, f=1 MHz, V
GS
=0
–
–
–
–
Reverse transfer
capacitance
C
rss
1
pF
pF
Equivalent capacitance time
related
(1)
C
o(tr)
11
V
GS
= 0, V
DS
= 0 to 840 V
Equivalent capacitance
energy related
(2)
C
o(er)
–
–
7
–
–
pF
R
G
Intrinsic gate resistance
f = 1 MHz open drain
18
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 840 V, I
D
= 1.2 A
13
1.6
8
nC
nC
nC
V
GS
=10 V
–
–
1. Time
related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. Energy
related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
increases from 0 to 80% V
DS
DSS
4/18
Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Symbol
Switching times
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
6
7
27
50
ns
ns
ns
ns
V
DD
= 525 V, I
D
= 0.6 A,
R
G
=4.7
Ω
, V
GS
=10 V
–
–
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I
SD
I
SDM
Source-drain current
1.4
5.6
mA
A
–
–
Source-drain current (pulsed)
(1)
V
SD
Forward on voltage
I
SD
= 1.2 A, V
GS
=0
1.5
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 1.2 A, V
DD
= 60 V
di/dt = 100 A/
μ
s,
244
1
ns
μ
C
A
–
–
9
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 1.2 A,V
DD
= 60 V
di/dt=100 A/
μ
s,
330
1.3
8
ns
μ
C
A
1. Pulsed:
pulse duration = 300
μ
s, duty cycle 1.5%
Doc ID 023509 Rev 2
5/18
Electrical characteristics
STF1N105K3, STFW1N105K3, STP1N105K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
and
TO-3PF
Figure 3.
Thermal impedance for TO-220FP
and
TO-3PF
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Figure 4.
Safe operating area for TO-220
Figure 5.
Thermal impedance for TO-220
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Figure 7.
Transfer characteristics
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6/18
Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Static drain-source on-resistance
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Figure 10.
Capacitance variations
Figure 11.
Output capacitance stored energy
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Figure 12.
Normalized gate threshold voltage
Figure 13.
Normalized on-resistance vs
vs temperature
temperature
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7
–
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Doc ID 023509 Rev 2
7/18
Electrical characteristics
STF1N105K3, STFW1N105K3, STP1N105K3
Figure 15.
Normalized B
VDSS
vs temperature
Figure 14.
Source-drain diode forward
characteristics
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Figure 16.
Maximum avalanche energy vs
starting Tj
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8/18
Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
Test circuits
3
Test circuits
Figure 17.
Switching times test circuit for
resistive load
Figure 18.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3.3
μ
F
R
L
μ
F
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
GS
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped inductive load test
circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3.3
V
DD
μ
F
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
Doc ID 023509 Rev 2
9/18
Package mechanical data
STF1N105K3, STFW1N105K3, STP1N105K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/18
Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
Package mechanical data
Table 8.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Doc ID 023509 Rev 2
11/18
Package mechanical data
STF1N105K3, STFW1N105K3, STP1N105K3
Figure 23.
TO-220FP drawing
7012510_Rev_K_B
12/18
Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
Package mechanical data
Table 9.
Dim.
TO-3PF mechanical data
Min.
mm
Typ.
Max.
A
C
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
D
D1
E
F
F2
G
G1
H
5.45
10
15.30
9.80
15.70
10.20
23.20
26.70
44.40
4.70
L
L2
L3
L4
L5
L6
L7
N
22.80
26.30
43.20
4.30
24.30
14.60
1.80
24.70
15
2.20
R
3.80
4.20
Dia
3.40
3.80
Doc ID 023509 Rev 2
13/18
Package mechanical data
STF1N105K3, STFW1N105K3, STP1N105K3
Figure 24.
TO-3PF drawing
L3
L
D
E
A
C
D1
Dia
L2
L6
L7
F2(3x)
F(3x)
G1
H
G
R
L5
N
L4
7627132_C
14/18
Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
Package mechanical data
Table 10.
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
Doc ID 023509 Rev 2
15/18
Package mechanical data
STF1N105K3, STFW1N105K3, STP1N105K3
Figure 25.
TO-220 type A drawing
0015988_typeA_Rev_S
16/18
Doc ID 023509 Rev 2
STF1N105K3, STFW1N105K3, STP1N105K3
Revision history
5
Revision history
Table 11.
Date
Document revision history
Revision
Changes
13-Aug-2012
23-Jan-2013
1
2
First release.
Added device in TO-3P
F
.
Doc ID 023509 Rev 2
17/18
STF1N105K3, STFW1N105K3, STP1N105K3
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Doc ID 023509 Rev 2
