Microchip-Tech-APTGT300DU170G
| Part # | Microchip-Tech-APTGT300DU170G |
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APTGT300DU170G
Dual common source
Trench + Field Stop IGBT3
Power Module
V
CES
= 1700V
I
C
= 300A @ Tc = 80°C
Application
C1
C2
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Q1
Q2
G1
E1
G2
E2
Features
Trench + Field Stop IGBT3 Technology
–
–
–
–
–
–
–
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery
parallel diodes
Low diode VF
E
Low leakage current
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
–
–
Symmetrical design
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
CES
Collector – Emitter Breakdown Voltage
1700
400
300
600
±20
1660
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
Continuous Collector Current
A
I
CM
V
GE
P
D
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
T
C
= 25°C
RBSOA Reverse
Bias Safe Operating Area
T
j
= 125°C
600A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
1 – 6
APTGT300DU170G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1700V
750
2.4
µA
T
j
= 25°C
2.0
2.4
5.8
V
GE
= 15V
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE(th)
Gate Threshold Voltage
V
I
C
= 300A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 5mA
V
GE
= 20V, V
CE
= 0V
5.0
6.5
600
V
nA
I
GES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
V
GE
= 0V
26.5
V
CE
= 25V
f = 1MHz
nF
1.1
0.88
370
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 900V
T
d(on)
T
r
Rise Time
40
ns
T
d(off)
Turn-off Delay Time
650
I
C
= 300A
T
f
T
d(on)
T
r
Fall Time
180
400
50
R
G
= 2.2
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 900V
I
C
= 300A
Turn-on Delay Time
Rise Time
ns
T
d(off)
Turn-off Delay Time
800
T
f
Fall Time
300
96
R
G
= 2.2
V
GE
= 15V
E
on
Turn-on Switching Energy
T
j
= 125°C
T
j
= 125°C
V
Bus
= 900V
mJ
I
C
= 300A
R
G
= 2.2
E
off
Turn-off Switching Energy
94
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
V
RRM
1700
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
750
I
RM
V
R
=1700V
µA
1000
I
F
DC Forward Current
300
A
V
T
j
= 25°C
T
j
= 125°C
1.8
1.9
2.2
V
F
Diode Forward Voltage
I
F
= 300A
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
385
490
76
t
rr
Q
rr
E
r
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
I
F
= 300A
V
R
= 900V
di/dt =3200A/µs
124
35
70
2 – 6
APTGT300DU170G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.075
0.14
R
thJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
V
ISOL
T
J
T
STG
T
C
4000
-40
-40
-40
3
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
150
125
100
5
3.5
300
°C
M6
M5
Torque Mounting
torque
Wt Package
Weight
N.m
g
For terminals
2
SP6 Package outline
(dimensions in mm)
3 – 6
APTGT300DU170G
Typical Performance Curve
Output Characteristics (V
GE
=15V)
Output Characteristics
600
600
500
400
300
200
100
0
T
J
= 125°C
500
400
300
200
100
0
T
J
=25°C
V
GE
=20V
V
GE
=13V
V
GE
=15V
T
J
=125°C
V
GE
=9V
0
1
2
3
4
0
1
2
3
4
5
V
CE
(V)
V
CE
(V)
Energy losses vs Collector Current
Transfert Characteristics
240
200
160
120
80
600
500
400
300
200
100
0
V
CE
= 900V
GE
= 15V
G
= 2.2
Ω
T
J
= 125°C
Eon
T
J
=25°C
V
R
Eoff
Er
T
J
=125°C
T
J
=125°C
40
0
0
100 200 300 400 500 600
C
(A)
5
6
7
8
9
10 11 12 13
I
V
GE
(V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
240
700
600
500
400
300
200
100
0
V
CE
= 900V
200
V
GE
=15V
Eon
I
C
= 300A
160
120
80
40
0
T
J
= 125°C
Eoff
Er
V
GE
=15V
T
J
=125°C
R
G
=2.2
Ω
0
400
800
1200
1600
2000
0
3
6
9
12
15
V
CE
(V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.9
0.7
IGBT
0.5
0.3
0.1
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
4 – 6
APTGT300DU170G
Forward Characteristic of diode
T
J
=25°C
Operating Frequency vs Collector Current
20
15
10
5
600
500
400
300
200
100
0
V
CE
=900V
D=50%
R
G
=2.2
Ω
T
J
=125°C
ZVS
T
C
=75°C
T
J
=125°C
ZCS
T
J
=125°C
hard
switching
0
0
0.5
1
1.5
2
2.5
3
0
80
160
240
320
400
480
V
F
(V)
I
C
(A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.12
0.1
Diode
0.9
0.7
0.08
0.06
0.04
0.02
0
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
5 – 6
APTGT300DU170G
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authorized personnel of Microsemi.
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property
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inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
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6 – 6
