onsemi-SMMBTA13LT1
| Part # | onsemi-SMMBTA13LT1 |
Download  | onsemi-SMMBTA13LT1 |
MMBTA13L, SMMBTA13L,
MMBTA14L, SMMBTA14L
Darlington Amplifier
Transistors
NPN Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT
−
23 (TO
−
236)
CASE 318
STYLE 6
COLLECTOR 3
MAXIMUM RATINGS
BASE
1
Rating
Collecto
r
−
Emitter Voltage
Collecto
r
−
Base Voltage
Emitte
r
−
Base Voltage
Symbol
Value
30
Unit
Vdc
V
CES
CBO
EBO
V
V
30
Vdc
EMITTER 2
10
Vdc
Collector Current
−
Continuous
I
300
mAdc
C
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
1x M
G
T
o
tal Device Dissipation FR
−
5 Board
P
D
G
225
1.8
mW
mW/
°
C
A
1
Derate above 25
°
C
1x =
Device Code
Thermal Resistance, Junction
−
to
−
Ambient
R
556
°
C/W
q
JA
x = M for MMBTA13LT1G,
SMMBTA13LT1G
T
o
tal Device Dissipation Alumina
P
D
300
2.4
mW
mW/
°
C
A
x = N for MMBTA14LT1G,
SMMBTA14LT1G, T3G
= Date Code*
M
Thermal Resistance, Junction
−
to
−
Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
G
= Pb
−
Free Package
T , T
J
−
55 to +150
stg
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBTA13LT1G,
SMMBTA13LT1G
SOT
−
23 3,000
/
T
a
pe & Reel
(Pb
−
Free)
MMBTA14LT1G,
SMMBTA14LT1G
SOT
−
23 3,000
/
T
a
pe & Reel
(Pb
−
Free)
SMMBTA14LT3G SOT
−
23
(Pb
−
Free)
10,000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016
−
Rev. 6
MMBTA13LT1/D
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage
V
Vdc
nAdc
nAdc
(BR)CES
(I =
100
m
Adc, V
= 0)
30
−
−
C
BE
Collector Cutoff Current
(V =
30 Vdc, I
= 0)
I
CBO
100
100
CB
E
Emitter Cutoff Current
(V =
10 Vdc, I
= 0)
I
EBO
−
EB
C
DC Current Gain
h
FE
−
(I =
10 mAdc, V
= 5.0 Vdc)
C
CE
MMBTA13, SMMBTA13
MMBTA14, SMMBTA14
5000
10,000
−
−
(I =
100 mAdc, V
= 5.0 Vdc)
C
CE
MMBTA13, SMMBTA13
MMBTA14, SMMBTA14
10,000
20,000
−
−
Collecto
r
−
Emitter Saturation Voltage
V
Vdc
Vdc
CE(sat)
(I =
100 mAdc, I
= 0.1 mAdc)
−
−
1.5
2.0
C
B
Bas
e
−
Emitter On Voltage
(I =
100 mAdc, V
= 5.0 Vdc)
V
BE
C
CE
SMALL
−
SIGNAL CHARACTERISTICS
f
T
MHz
(I =
10 mAdc, V
= 5.0 Vdc, f = 100 MHz)
125
−
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
4. f =
|h |
•
f .
test
T
fe
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C)
500
2.0
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
R
≈
0
S
1.0
0.7
0.5
200
100
50
I =
1.0 mA
C
0.3
0.2
10
m
A
100
m
A
100
m
A
0.1
0.07
0.05
20
10
m
A
I =
1.0 mA
C
10
0.03
0.02
5.0
10 20
50 100
200 500
1ꢀk 2ꢀk
5ꢀk 10ꢀk
20ꢀk 50ꢀk
100ꢀk
f, FREQUENCY (Hz)
10 20
50 100
200 500
1ꢀk 2ꢀk
5ꢀk 10ꢀk
20ꢀk 50ꢀk
100ꢀk
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
Figure 3. Noise Current
200
14
12
BANDWIDTH = 10 Hz TO 15.7 kHz
BANDWIDTH = 10 Hz TO 15.7 kHz
100
70
10
8.0
6.0
4.0
2.0
I =
10
m
A
C
10
m
A
50
100
m
A
100
m
A
30
20
I =
1.0 mA
C
1.0 mA
10
0
1.0 2.0
5.0
10
20
50 100
200
500 1000
1.0 2.0
5.0
10
20
50 100 200
500 1000
R ,
SOURCE RESISTANCE (k
W
)
S
R ,
SOURCE RESISTANCE (k
W
)
S
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
3
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
SMALL
−
SIGNAL CHARACTERISTICS
20
10
4.0
V
= 5.0 V
CE
f = 100 MHz
T =
25
°
C
J
T =
25
°
C
J
2.0
7.0
5.0
C
ibo
1.0
0.8
C
obo
0.6
0.4
3.0
2.0
0.2
0.04
0.1 0.2
0.4
1.0 2.0
4.0
10 20
40
0.5 1.0
2.0
0.5 10 20
50
100 200
500
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
200ꢀk
3.0
2.5
2.0
1.5
1.0
0.5
T =
125
°
C
J
T =
25
°
C
J
100ꢀk
70ꢀk
50ꢀk
I =
C
50 mA
250 mA
500 mA
10 mA
25
°
C
30ꢀk
20ꢀk
10ꢀk
7.0ꢀk
5.0ꢀk
-ꢁ55
°
C
V
CE
= 5.0 V
3.0ꢀk
2.0ꢀk
500
0.1 0.2
0.5 1.0
2.0 5.0
10 20
50 100
200 500
1000
5.0 7.0
10
20 30
50 70
100
200 300
I ,
COLLECTOR CURRENT (mA)
C
I ,
BASE CURRENT (
m
A)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
1.6
1.4
-ꢁ1.0
-ꢁ2.0
-ꢁ3.0
-ꢁ4.0
-ꢁ5.0
-ꢁ6.0
*APPLIES FOR I
/I
≤
h /3.0
C B
FE
25
°
C TO 125
°
C
T =
25
°
C
J
*R
FOR V
CE(sat)
q
VC
V
@ I
/I =
1000
-ꢁ55
°
C TO 25
°
C
25
°
C TO 125
°
C
BE(sat)
C B
1.2
1.0
0.8
0.6
V
BE(on)
@ V
= 5.0 V
CE
q
FOR V
BE
VB
-ꢁ55
°
C TO 25
°
C
V
@ I
/I =
1000
C B
CE(sat)
5.0 7.0
10
20 30
50 70 100
200 300
500
5.0 7.0
10
20 30
50 70
100
200 300
500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
4
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
SINGLE PULSE
0.05
0.1
0.1
0.07
0.05
0.03
0.02
Z
Z
= r(t)
•
R ꢂT
– T
= P
Z
q
q
q
q
JC(t)
JA(t)
JC
J(pk)
C
(pk) JC(t)
= r(t)
•
R ꢂT
– T
= P
Z
q
q
JA
J(pk)
A
(pk) JA(t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢀk
2.0ꢀk
5.0ꢀk 10ꢀk
t, TIME (ms)
Figure 12. Thermal Response
1.0ꢀk
700
1.0 ms
500
T =
25
°
C
C
300
200
100
m
s
T =
25
°
C
A
1.0 s
100
70
50
30
20
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
0.4 0.6
40
1.0
2.0
4.0 6.0
10
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
FIGURE A
t
P
P
P
P
P
t
1
1/f
t
1
DUTYꢀCYCLE
+
t ꢀf
+
1
t
P
PEAK PULSE POWER = P
P
Design Note: Use of Transient Thermal Resistance Data
5
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
_
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
_
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
_
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
_
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
STYLE 6:
PIN 1.
BASE
SIDE VIEW
END VIEW
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
3X
0.90
2.90
3X
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
◊
MMBTA13LT1/D
