onsemi-VN2222LLRL
| Part # | onsemi-VN2222LLRL |
Download  | onsemi-VN2222LLRL |
ꢀ
ꢁ
ꢂ
ꢂ
ꢂ
ꢂ
ꢃ
ꢃ
Preferred Device
ꢄ
ꢅ
ꢆ
ꢇ
ꢅ
ꢇ
ꢄ
ꢓ
ꢈ
ꢅ
ꢉ
ꢊ
ꢆ
ꢇ
ꢋ
ꢗ
ꢌ
ꢄ
ꢘ
ꢍ
ꢇ
ꢎ
ꢏ
ꢐ
ꢑ
ꢒ
ꢔ
ꢕ
ꢖ
ꢒ
ꢀ
ꢙ
ꢕ
N
−
Channel TO
−
92
Features
•
Pb
−
Free Packages are Available*
150 mA, 60 V
R
= 7.5
W
DS(on)
MAXIMUM RATINGS
Rating
N
−
Channel
Symbol
Value
60
Unit
Vdc
Vdc
ꢀ
Drai
n
−
Source Voltage
V
DSS
Drain
−
Gate Voltage (R
= 1.0 M
W
)
V
V
60
GS
DGR
Gate
−
Source Voltage
−
Continuous
ꢁ
V
GS
20
40
Vdc
Vpk
−
Non
−
repetitive (t
≤
50
m
s)
p
GSM
ꢂ
Drain Current
−
Continuous
−
Pulsed
mAdc
I
150
1000
D
I
DM
T
o
tal Power Dissipation @ T
= 25
°
C
Derate above 25
°
C
P
D
400
3.2
mW
mW/
°
C
A
TO
−
92
CASE 29
STYLE 22
Operating and Storage
T
e
mperature Range
T ,
T
stg
−
55 to
+150
°
C
J
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1
2
3
MARKING DIAGRAM
& PIN ASSIGNMENT
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
312.5
300
Unit
°
C/W
°
C
Thermal Resistance, Junction
−
to
−
Ambient
R
q
JA
VN22
22LL
AYWW
Maximum Lead
T
e
mperature for
Soldering Purposes, 1/16
″
from case
for 10 seconds
T
L
1
3
Source
Drain
2
Gate
A
Y
= Assembly Location
=
Y
e
ar
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 1096 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
1095
Publication Order Number:
September, 2004
−
Rev. 3
VN2222LL/D
VN2222LL
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Drain
−
Source Breakdown Voltage
V
60
−
Vdc
(BR)DSS
(V
GS
= 0, I
= 100
m
Adc)
D
Zero Gate Voltage Drain Current
I
m
Adc
DSS
(V
DS
(V
DS
= 48 Vdc, V
= 48 Vdc, V
= 0)
−
−
10
500
GS
GS
= 0, T
= 125
°
C)
J
Gate
−
Body Leakage Current, Forward
(V =
30 Vdc, V
= 0)
I
−
−
100
nAdc
GSSF
GSF DS
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
V
0.6
2.5
Vdc
GS(th)
(V
DS
= V
, I
= 1.0 mAdc)
GS
D
Static Drain
−
Source On
−
Resistance
r
W
DS(on)
(V
GS
(V
GS
= 10 Vdc, I
= 0.5 Adc)
−
−
7.5
13.5
D
= 10 Vdc, I
= 0.5 Vdc, T
= 125
°
C)
D
C
Drain
−
Source On
−
Voltage
V
−
−
Vdc
DS(on)
(V
GS
(V
GS
= 5.0 Vdc, I
= 200 mAdc)
1.5
3.75
D
= 10 Vdc, I
= 500 mAdc)
D
On
−
State Drain Current
(V =
10 Vdc, V
I
750
100
−
−
mA
D(on)
≥
2.0 V
DS(on)
)
GS DS
Forward Transconductance
(V =
10 Vdc, I
= 500 mAdc)
g
fs
m
mhos
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
60
25
pF
ns
iss
(V
DS
= 25 Vdc, V
= 0,
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Reverse Transfer Capacitance
C
5.0
rss
SWITCHING CHARACTERISTICS
(Note 1)
Turn
−
On Delay Time
t
on
−
−
10
10
(V
DD
R
= 15 Vdc, I
= 600 mA,
D
= 25
W
, R
= 23
W
)
gen
L
Turn
−
Off Delay Time
t
off
1. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
ORDERING INFORMATION
Device
†
Package
Shipping
VN2222LL
TO
−
92
1000 Unit / Box
1000 Unit / Box
VN2222LLG
TO
−
92
(Pb
−
Free)
VN2222LLRL
TO
−
92
TO
−
92
1000 Unit / Box
2000
T
a
pe & Reel
2000
T
a
pe & Reel
VN2222LLRLRA
VN2222LLRLRAG
TO
−
92
(Pb
−
Free)
VN2222LLRLRM
TO
−
92
2000 Unit / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
1096
VN2222LL
ꢚ
ꢜ ꢗꢛ
ꢜ ꢗꢘ
ꢜ
ꢌ ꢩ
ꢚ ꢞ
°
ꢉ
ꢇ
ꢚ ꢞ
°
ꢉ
ꢑ ꢩ
ꢜ ꢖ
ꢑ
ꢀꢂ
ꢖ ꢗ
ꢛ
ꢖ ꢗꢘ
ꢖ ꢗꢙ
ꢖ ꢗꢚ
ꢑ
ꢁꢂ
ꢩ ꢜ
ꢖ ꢑ
ꢒ ꢓꢞ
ꢞ
°
ꢉ
ꢜ ꢗꢙ
ꢜ ꢗꢚ
ꢜ
ꢠ ꢑ
ꢜ ꢚꢞ
°
ꢉ
ꢛ ꢑ
ꢟ ꢑ
ꢖ ꢗꢛ
ꢖ ꢗꢘ
ꢖ ꢗꢙ
ꢖ ꢗꢚ
ꢘ ꢑ
ꢞ ꢑ
ꢙ ꢑ
ꢝ ꢑ
ꢞ
ꢠ
ꢜ
ꢖ
ꢖ
ꢜ
ꢚ
ꢝ
ꢙ
ꢘ
ꢟ
ꢛ
ꢞ
ꢠ
ꢜ
ꢖ
ꢖ
ꢜ
ꢚ
ꢝ
ꢙ
ꢘ
ꢟ
ꢛ
ꢑ ꢄ
ꢀ ꢆꢇ
ꢃꢈ ꢒ
ꢓꢂꢔ ꢊ
ꢆꢉꢋ ꢑ
ꢔꢕꢌꢇ ꢁꢋ
ꢍ ꢑꢔ
ꢕꢌꢂ ꢐ
ꢀꢂ
ꢑ ꢄ
ꢁ ꢇꢌꢋ
ꢓꢒ ꢓꢂ
ꢔ ꢊꢆꢉꢋ
ꢑ ꢔ
ꢕꢌꢇ ꢁ
ꢋ ꢍꢑ
ꢔ ꢕꢌꢂ
ꢐ
ꢁꢂ
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
ꢚ ꢗꢙ
ꢚ ꢗꢚ
ꢚ
ꢜ
ꢗ
ꢚ
ꢜ
ꢗ
ꢜ
ꢞ
ꢑ
ꢩ ꢑ
ꢀꢂ ꢁ
ꢂ
ꢩ ꢜ
ꢪꢇ
ꢜ ꢗ
ꢜ
ꢜ ꢗ
ꢖꢞ
ꢜ
ꢑ
ꢃ
ꢩ
ꢜ
ꢖ
ꢑ
ꢁ
ꢂ
ꢃ
ꢀ
ꢩ
ꢚ
ꢖ
ꢖ
ꢪ
ꢇ
ꢜ ꢗꢛ
ꢜ ꢗꢘ
ꢜ ꢗꢙ
ꢜ ꢗꢚ
ꢜ
ꢀ
ꢖ ꢗ
ꢠꢞ
ꢖ ꢗꢠ
ꢖ ꢗ
ꢛꢞ
ꢖ ꢗ
ꢛ
ꢖ ꢗꢛ
ꢖ ꢗꢘ
ꢖ ꢗꢙ
ꢖ ꢗ
ꢟꢞ
ꢖ ꢗꢟ
ꢤ
ꢜ
ꢙ
ꢖ
ꢤ
ꢜ
ꢙ
ꢖ
ꢒ
ꢘ
ꢖ
ꢒ
ꢚ
ꢖ
ꢖ
ꢤ
ꢚ
ꢖ
ꢤ
ꢘ
ꢖ
ꢤ
ꢜ
ꢖ
ꢖ
ꢒ
ꢘ
ꢖ
ꢒ
ꢚ
ꢖ
ꢤ
ꢚ
ꢖ
ꢤ
ꢘ
ꢖ
ꢤ
ꢜ
ꢖ
ꢖ
ꢌ
ꢄ
ꢌ
ꢋ
ꢎ
ꢏ
ꢋ
ꢆ
ꢇ
ꢌ
ꢊ
ꢆ
ꢋ
ꢍ
°
ꢉ
ꢐ
ꢌ
ꢄ
ꢌ
ꢋ
ꢎ
ꢏ
ꢋ
ꢆ
ꢇ
ꢌ
ꢊ
ꢆ
ꢋ
ꢍ
°
ꢉ
ꢐ
Figure 3. Temperature versus Static
Figure 4. Temperature versus Gate
Threshold Voltage
Drain
−
Source On
−
Resistance
1097
ꢀ ꢁꢂꢚꢒꢗꢃ
Preferred Device
ꢄ
ꢅ
ꢆ
ꢇ
ꢅ
ꢇ
ꢄ
ꢓ
ꢈ
ꢅ
ꢉ
ꢊ
ꢆ
ꢇ
ꢋ
ꢂ
ꢌ
ꢄ
ꢀ
ꢍ
ꢘ
ꢎ
ꢇ
ꢏ
ꢂ
ꢒ
ꢒ
ꢔ
ꢕ
ꢖ
ꢚ
ꢒ
ꢙꢕ
N
−
Channel TO
−
92
MAXIMUM RATINGS
Rating
Symbol
Value
240
Unit
Vdc
Vdc
200 mAMPS
240 VOLTS
Drai
n
−
Source Voltage
Drai
n
−
Gate Voltage
V
DSS
V
V
240
DGR
R
= 6
Ω
DS(on)
Gat
e
−
Source Voltage
−
Continuous
V
GS
20
40
Vdc
Vpk
N
−
Channel
−
Non
−
repetitive (t
≤
50
µ
s)
p
GSM
ꢀ
Continuous Drain Current
Pulsed Drain Current
I
200
500
mAdc
mAdc
D
I
DM
Power Dissipation @ T
= 25
°
C
Derate above 25
°
C
P
D
350
2.8
mW
mW/
°
C
C
ꢁ
Operating and Storage
T
e
mperature
THERMAL CHARACTERISTICS
Characteristic
T ,
T
−
°
C
J
stg
ꢂ
Symbol
Max
312.5
300
Unit
°
C/W
°
C
Thermal Resistance, Junction to Ambient
R
θ
JA
TO
−
92
CASE 29
Style 22
Maximum Lead
T
e
mperature for Soldering
Purposes, 1/16
″
from case for 10
seconds
T
L
1
2
3
MARKING DIAGRAM
& PIN ASSIGNMENT
VN2406L
YWW
1
3
Source
Drain
2
Gate
Y
WW
=
Y
e
ar
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
VN2406L
VN2406LZL1
TO
−
92
TO
−
92
1000 Units/Box
2000 Ammo Pack
Preferred
devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
1098
Publication Order Number:
July, 2001
−
Rev. 3
VN2406L/D
VN2406L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
STATIC CHARACTERISTICS
Symbol
Min
Max
Unit
Drai
n
−
Source Breakdown Voltage
V
240
−
Vdc
(BR)DSS
(V
GS
= 0, I
= 100
µ
A)
D
Zero Gate Voltage Drain Current
I
µ
Adc
DSS
(V
DS
(V
DS
= 120 Vdc, V
= 120 Vdc, V
= 0)
−
−
10
500
GS
GS
= 0, T
= 125
°
C)
A
Gate
−
Body Leakage
(V =
0, V
I
−
100
2.0
−
nAdc
Vdc
Adc
Ω
GSS
=
15 V)
DS GS
Gate Threshold Voltage
(V =
V ,
I =
1.0 mA)
V
I
0.8
1.0
GS(th)
DS GS
D
On
−
State Drain Current (Note 1)
(V =
10
V
, V
≥
2.0 V
D(on)
)
GS DS
DS(on)
Drain
−
Source On Resistance (Note 1)
r
DS(on)
(V
GS
(V
GS
= 2.5
V
, I
=
0
.1 A)
−
−
10
6.0
D
= 10
V
, I
=
0
.5 A)
D
Forward Transconductance (Note 1)
(V =
10
V
, I
=
0
.5 A)
g
fs
300
−
mS
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
125
50
pF
pF
pF
iss
(V
DS
= 25 Vdc, V
= 0,
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Reverse Transfer Capacitance
C
20
rss
SWITCHING CHARACTERISTICS
Turn
−
On Time
t
t
−
−
−
−
8.0
8.0
23
ns
ns
ns
ns
(on)
(V
DD
L
= 60 Vdc, I
= 0.4 A,
D
t
(r)
R
= 150
Ω
, R
= 25
Ω
)
G
Turn
−
Off Time
(off)
t
(f)
34
1. Pulse
T
e
st; Pulse Width < 300
µ
s, Duty Cycle
v
2.0%.
1099
