onsemi-2N4401NLBU

Part #onsemi-2N4401NLBU
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onsemi-2N4401NLBU
2N4401  
MMBT4401  
C
E
TO-92  
C
B
SOT-23  
Mark: 2X  
B
E
NPN General Pupose Amplifier  
This device is designed for use as a medium power amplifier and  
switch requiring collector currents up to 500 mA.  
Absolute Maximum Ratings*  
T
A
=
2
5°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
V

CEO  

V

CBO  

V

EBO  

I

C  

Collector-Emitter Voltage  
40  
60  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current – Continuous  
Operating and Storage Junction Temperature Range  
600  
mA  
-55 to +150  
C
°
T

J

, T

stg  

*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES
:  
1)
These ratings are based on a maximum junction temperature of 150 degrees C.  
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
T
A
=
2
5°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N4401  
*MMBT4401  
P

D  

Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
mW  
m
W
/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
R

θ  

C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
R

θ  

C/W  
°
JA  
*
Device mounted on FR-4 PCB 1.6″ X 1.6″ X 0.06.”  
2001 Fairchild Semiconductor
Corporatio
n
 
2N4401/MMBT4401, Rev A  

NPN General Purpose Amplifier  
(continued)  
Electrical Characteristics  
T
A
=
2
5°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V

(BR)CEO  

V

(BR)CBO  

V

(BR)EBO  

I

BL  

Collector-Emitter Breakdown Voltage*
 
I

C

= 1.0 mA, I

B

= 0  
40  
60  
V
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Base Cutoff Current  
I

C

= 0.1 mA, I

E

= 0  
I

E

= 0.1 mA, I

C

= 0  
6.0  
V

CE

= 35 V, V

EB

= 0.4 V  
V

CE

= 35 V, V

EB

= 0.4 V  
0.1  
0.1  
A
A
µ
µ
I

CEX  

Collector Cutoff Current  
ON CHARACTERISTICS*  
h

FE  

DC Current Gain  
I

C

= 0.1 mA, V

CE

= 1.0 V  
I

C

= 1.0 mA, V

CE

= 1.0 V  
I

C

= 10 mA, V

CE

= 1.0 V  
I

C

= 150 mA, V

CE

= 1.0 V  
I

C

= 500 mA, V

CE

= 2.0 V  
I

C

= 150 mA, I

B

= 15 mA  
I

C

= 500 mA, I

B

= 50 mA  
I

C

= 150 mA, I

B

= 15 mA  
I

C

= 500 mA, I

B

= 50 mA  
20  
40  
80  
100  
40  
300  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
0.4  
0.75  
0.95  
1.2  
V
V

CE(
sat
)  

V

BE(
sat
)  

V
V
V
0.75  
250  
SMALL SIGNAL CHARACTERISTICS  
f

T  

Current Gain – Bandwidth Product  
Collector-Base Capacitance  
Emitter-Base Capacitance  
Input Impedance  
I

C

= 20 mA, V

CE

= 10 V,  
f = 100 MHz  
V

CB

= 5.0 V, I

E

= 0,  
f = 140 kHz  
V

BE

= 0.5 V, I

C

= 0,  
f = 140 kHz  
I

C

= 1.0 mA, V

CE

= 10 V,  
f = 1.0 kHz  
I

C

= 1.0 mA, V

CE

= 10 V,  
f = 1.0 kHz  
I

C

= 1.0 mA, V

CE

= 10 V,  
f = 1.0 kHz  
I

C

= 1.0 mA, V

CE

= 10 V,  
f = 1.0 kHz  
MHz  
pF  
6.5  
30  
C

cb  

C

eb  

h

ie  

h

re  

h

fe  

h

oe  

3
pF  
1.0  
0.1  
40  
15  
k
Ω
x 10

-4  

Voltage Feedback Ratio  
Small-Signal Current Gain  
Output Admittance  
8.0  
500  
30  
1.0  
mhos  
µ
SWITCHING CHARACTERISTICS  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
V

CC

= 30 V, V

E
B

= 2 V,  
I

C

= 150 mA, I

B1

= 15 mA  
V

CC

= 30 V, I

C

= 150 mA  
I

B1

= I

B2

= 15 mA  
15  
20  
ns  
ns  
ns  
ns  
t

d  

t

r  

225  
30  
t

s  

t

f  

*
Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%  

NPN General Purpose Amplifier  
(continued)  
Typical Characteristics  
Typical Pulsed Current Gain  
vs Collector Current  
Collector-Emitter Saturation  
Voltage vs Collector Current  
500  
400  
300  
200  
100  
0
0.4  
V
= 5V  
CE  
β
= 10  
0.3  
0.2  
0.1  
125 °C  
25 °C  
125
°
C  
25
°
C  
– 40 °C  
– 40
°
C  
0.1  
0.3  
1
3
10  
30  
100 300  
1
10  
100  
500  
I

C

– COLLECTOR CURRENT
 
(mA)  
I

C

– COLLECTOR CURRENT
 
(mA)  
Base-Emitter Saturation  
Voltage vs Collector Current  
Base-Emitter ON Voltage vs  
Collector Current  
1
0.8  
0.6  
0.4  
0.2  
β
= 10  
V
= 5V  
1
CE  
– 40
°
C  
25
°
C  
– 40
°
C  
0.8  
0.6  
0.4  
25
°
C  
125
°
C  
1
2
5
°
C  
1
10  
100  
500  
0.1  
1
10  
25  
I

C

– COLLECTOR CURRENT
 
(mA)  
I

C

– COLLECTOR CURRENT
 
(mA)  
Emitter Transition and Output  
Capacitance vs Reverse Bias Voltage  
Collector-Cutoff Current  
vs Ambient
T
e
mperature  
500  
100  
20  
16  
12  
8
f = 1 MHz  
V
= 40V  
CB  
10  
1
C
te  
0.1  
C
ob  
4
25  
50  
75  
100  
125  
150  
0.1  
1
10  
100  
T

A

– A
M
B
IENT TEMPERATURE (
°
C)  
REVERSE BIAS VO
L
TA
G
E (V)  

NPN General Purpose Amplifier  
(continued)  
Typical Characteristics
 
(continued)  
T
u
rn On and Turn Off Times  
Switching Times  
vs Collector Current  
vs Collector Current  
400  
400  
I
I
c
c
I

B1

= I

B2  

=
I

B1

= I

B2  

=
10  
10  
320  
240  
160  
80  
320  
240  
160  
80  
V
= 25 V  
V
= 25 V  
cc  
cc  
t
s
t
r
t
off  
t
f
t
on  
t
d
0
0
10  
100  
1000  
10  
100  
1000  
I
– COLLECTOR CURRENT (mA)  
I
– COLLECTOR CURRENT (mA)  
C
C
Power Dissipation vs  
Ambient Temperature  
1
SOT-223  
0.75  
TO-92  
0.5  
SOT-23  
0.25  
0
0
25  
50  
75  
100  
125  
150  
TEMPER
A
T
URE
(

o

C)  

NPN General Purpose Amplifier  
(continued)  
Typical Common Emitter Characteristics
 
(f = 1.0kHz)  
Common Emitter Characteristics  
Common Emitter Characteristics  
2.4  
2
8
6
4
2
0
V
I
= 10 V  
= 10 mA  
V
T
= 10 V  
= 25

o

C  
CE  
CE  
h
C
A
re  
h
ie  
h
fe  
1.6  
1.2  
0.8  
0.4  
0
h
oe  
h
oe  
h
h
re  
fe  
h
ie  
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
100  
T

A

– AMBIENT TEMPER
A
T
URE (

o

C)  
I

C

– COLLECTOR CURRENT (mA)  
Common Emitter Characteristics  
1.3  
1.25  
1.2  
I
T
= 10 mA  
= 25

o

C  
C
A
h
fe  
1.15  
1.1  
h
ie  
1.05  
1
h
h
0.95  
0.9  
re  
0.85  
0.8  
oe  
0.75  
0
5
10  
15  
20  
25  
30  
35  
V

CE

– COLLECTOR VO
L
TA
G
E (V)  

NPN General Purpose Amplifier  
(continued)  
Test Circuits  
30 V  
200
Ω  
16 V  
1.0 K
Ω  
0
≤
200ns  
500
Ω  
FIGURE 1: Saturated Turn-On Switching Time
r  
6.0 V  
– 1.5 V  
NOTE: BV

EBO

= 5.0 V  
37
Ω  
1k  
30 V  
1.0 K
Ω  
0
≤
200ns  
50
Ω  
FIGURE 2: Saturated Turn-Off Switching Time  

TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
PowerTrench  
QFET™  
QS™  
SyncFET™  
TinyLogic™  
UHC™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
Bottomless™  
CoolFET™  
CROSSVOLT
™  
DOME™  
QT Optoelectronics™  
VCX™  
HiSeC™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E

2

CMOS

TM  

EnSigna

TM  

FACT™  
FACT Quiet Series™  
FAST  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE T
O
A
NY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD  
DOES NO
T
A
SSUM
E
A
NY LIABILIT
Y
A
RISING OUT OF TH
E
A
PPLICATION OR USE O
F
A
NY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. G  

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Contents  
•
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•
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(PCNs)  
•
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•
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•
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datasheet  
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Quality and reliability  
Design center  
General description  
This device is designed for use as a medium power amplifier and switch  
requiring collector currents up to 500 mA.  
e-mail this datasheet  
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This page  
Print version  
Product status/pricing/packaging  
Product  
Product status  
Pb-free Status
 
Pricing* Package
 
type Leads Packing
 
method  
Package Marking Convention**  
2N4401BU  
Full Production  
$0.026  
TO-92  
3
BULK  
Line 1: 2N Line 2: 4401 Line 3: -&3  
2N4401NLBU  
Full Production  
$0.026  
TO-92  
3
BULK  
Line 1: 2N Line 2: 4401 Line 3: -&3  
2N4401TA  
Full Production  
Full Production  
$0.026  
$0.026  
TO-92  
TO-92  
3
3
AMMO  
AMMO  
Line 1: 2N Line 2: 4401 Line 3: -&3  
Line 1: 2N Line 2: 4401 Line 3: -&3  
2N4401TAR  

2N4401TA_NL  
2N4401TF  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
N/A  
$0.026  
$0.026  
N/A  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
3
3
3
3
3
3
3
3
AMMO  
TAPE REEL  
TAPE REEL  
TAPE REEL  
BULK  
Line 1: 2N Line 2: 4401 Line 3: -&3  
Line 1: 2N Line 2: 4401 Line 3: -&3  
Line 1: 2N Line 2: 4401 Line 3: -&3  
2N4401TFR  
Line 1:  
(Fairchild logo)  
$Y  
&
Z
(Asm. Plant Code)  
2N4401_D81Z  
2N4401_J05Z  
2N4401_J18Z  
2N4401_J60Z  
2N4401_J61Z  
& (3-Digit
 
Date Code)  
3
Line 2: 2N Line 3: 4401  
Line 1:  
(Fairchild logo)  
$Y  
&
Z
(Asm. Plant Code)  
N/A  
& (3-Digit
 
Date Code)  
3
Line 2: 2N Line 3: 4401  
Line 1:  
(Fairchild logo)  
$Y  
&
Z
(Asm. Plant Code)  
N/A  
BULK  
& (3-Digit
 
Date Code)  
3
Line 2: 2N Line 3: 4401  
Line 1:  
(Fairchild logo)  
$Y  
&
Z
(Asm. Plant Code)  
N/A  
BULK  
& (3-Digit
 
Date Code)  
3
Line 2: 2N Line 3: 4401  
Line 1:  
(Fairchild logo)  
$Y  
&
Z
(Asm. Plant Code)  
N/A  
BULK  
& (3-Digit
 
Date Code)  
3
Line 2: 2N Line 3: 4401  
* Fairchild 1,000 piece Budgetary Pricing  
** A sample button will appear if the part is available through Fairchild’s on-line samples program. If there is no sample button, please  
contact a
Fairchild distributor
to obtain samples  
Indicates product with Pb-free second-level interconnect. For more information
click here.  
Package marking information for product 2N4401 is available.
Click here for more information
.  

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Models  
Package & leads  
Condition  
Temperature range  
PSPICE  
Software version  
Revision date  
TO-92-3  
Electrical  
25°C  
N/A  
N/A  
back to top  
Application notes  
AN-9006: IGBT Application Note for Camera Strobe
(145 K) Jul 27, 2007  
back to top  
Qualification Support  
Click on a product for detailed qualification data  
Product  
2N4401BU  
2N4401NLBU  
2N4401TA  
2N4401TAR  
2N4401TA_NL  
2N4401TF  
2N4401TFR  
2N4401_D81Z  
2N4401_J05Z  
2N4401_J18Z  
2N4401_J60Z  
2N4401_J61Z  
back to top  
© 2007 Fairchild Semiconductor  

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