onsemi-2SK4085LS-CBC11
| Part # | onsemi-2SK4085LS-CBC11 |
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Order
i
n
g number : EN
A
0
553E
2SK4085LS
N-Channel Power MOSFET
Ω
500V, 16A, 430m
, TO-220F-3FS
F
e
atures
•
ON-resistance R
(on)=0.33 (typ.)
Input capacitance
Ciss=1200pF (typ.)
10V drive
Ω
DS
•
•
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
500
D
S
S
V
±30
V
GSS
*1
I
Li
m
i
t
ed on
l
y
b
y max
i
m
um temperature
T
c
h=150 C
16
A
°
Dc
Dr
a
i
n
C
urrent
(
D
C
)
I
*2
T
c
=25 C
(
O
ur
i
d
eal heat d
i
s
s
i
p
at
i
o
n cond
i
t
i
o
n
)
*3
11
A
°
D
p
ack
Dr
a
i
n
C
urrent
(
P
u
l
s
e)
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
I
PW 10 s,
duty cyc
l
e
1
%
60
A
≤
μ
≤
DP
2.0
W
W
P
D
T
c
=25 C
(
O
ur
i
d
eal heat d
i
s
s
i
p
at
i
o
n cond
i
t
i
o
n
)
*3
40
150
°
Channel
T
e
mperature
T
c
h
C
C
°
Storage
T
e
mperature
T
s
tg
–
–
55 to +150
141
°
A
v
a
l
a
nche Ene
r
g
y
(
S
i
n
g
l
e
P
u
l
s
e)
*
4
A
v
a
l
a
nche Current
*
5
E
mJ
A
AS
I
AV
16
1 Shows chip capability.
*
2 Package limited.
*
3 Our condition is radiation from backside.
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
4 V
=50
V
,
L
=1mH, I
=16A (Fig.1)
*
*
DD
5 L
1mH, Single pulse
AV
≤
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Product &
Package
I
n
f
o
rmat
i
o
n
• Package
: TO-220F-3FS
7528-001
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
4.7
10.16
3.18
2S
K
4
085
L
S
-1E
2.54
M
a
rk
i
n
g
El
e
ctr
i
c
al Connect
i
o
n
2
K
4
085
L
O
T No.
1
2.76
1.47 MAX
0.8
3
1
2
3
0.5
1 : Gate
2 : Dr
a
i
n
3 :
S
ource
2.54
2.54
TO-220F-3FS
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/40412 TC-00002743/O1007 TIIM TC-00000927/
No. A0553-1/7
40407QB TIIM TC-00000628/22107QB TIIM TC-00000556
2SK4085LS
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ.
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
V
m
i
n
.
500
max.
Dr
a
i
n
-to-Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate-to-Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I
=10m
A
, V
=
0V
(
B
R
)
D
S
S
D GS
I
V
=400
V
, V
=
0V
100
A
μ
D
S
S
DS
GS
I
V
=±30
V
, V
=
0V
±100
5
nA
V
GSS
(
o
f
f)
GS DS
V
V
=10
V
, I
=
1mA
3
GS
| yfs |
(
o
n)
DS
D
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
Stat
i
c Dr
a
i
n
-to-Source On-State Res
i
s
tance
I
n
put Capac
i
t
ance
V
=10
V
, I
=
8A
D
4.5
9
S
DS
R
I
=8
A
, V
=
10V
0.33
1200
250
55
0.43
Ω
DS
D GS
C
i
s
s
Coss
Crss
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capac
i
t
ance
V
=30
V
,
f
=1MHz
DS
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
t
t
t
t
(
o
n)
26.5
78
d
r
Ri
s
e
T
i
m
e
See F
i
g
.2
T
u
rn-OFF De
l
a
y
T
i
m
e
(
o
f
f)
146
57
d
f
Fa
l
l Ti
m
e
T
o
tal Gate Cha
r
g
e
Qg
46.6
8.2
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
=200
V
, V
=
10
V
, I
=
16A
GS
DS
D
27.4
0.95
V
I =16
A
,
V
=
0V
GS
1.3
SD
S
Fi
g
.1
A
v
a
l
a
nche Res
i
s
tance
T
e
st C
i
r
c
u
i
t
Fi
g
.2 Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
V
V
=200V
IN
DD
L
10V
0V
≥
50
Ω
RG
I
=8A
D
V
R =25
Ω
IN
L
D
V
OUT
2SK4085LS
PW=10
μ
s
10V
0V
D.C.
≤
0.5%
V
50
Ω
DD
G
2SK4085LS
P. G
S
R
=50
Ω
GS
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
Sh
i
p
p
i
n
g
memo
Pb Free
2S
K
4
085
L
S
-1E
TO-220F-3FS
50pcs./magaz
i
n
e
No. A0553-2/7
2SK4085LS
I
D
— V
DS
I
— V
D GS
45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
Tc=25
°
C
V
=20V
DS
Tc= –25
°
C
25
°
C
8V
75
°
C
6V
5
0
5
0
V
=5V
GS
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source
V
o
ltage, V
— V
IT11732
Gate-to-Source
V
o
ltage, V
–
– V
GS
IT11733
DS
R
(
o
n)
–
– V
R
(
o
n)
–
–
T
c
DS
GS
DS
1.2
1.0
0.8
0.6
0.4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I =8A
D
Tc=75
°
C
25
°
C
–
–
25
°
C
0.2
0
0.1
0
3
5
7
9
11
13
15
IT11734
–
–
50
–
–
25
0
25
50
75
100
125
150
Gate-to-Source
V
o
ltage, V
— V
Case Temperature, Tc
–
–
°
C
IT11735
GS
|
y
fs
|
— I
I
— V
D
S
S
D
3
2
5
V
=10V
V
=0V
DS
GS
3
2
10
7
10
7
5
3
2
5
1.0
7
5
3
2
3
2
0.1
7
5
1.0
7
3
2
5
3
0.1
0.01
0.2
2
3
5
7
2
3
5
7
2
3
5
0.4
0.6
0.8
1.0
1.2
1.4
IT11737
1.0
10
Drain Current, I
–
– A
IT11736
Diode Forward
V
o
ltage, V
–
– V
SD
D
C
i
s
s, Coss, Crss
–
– V
SW
T
i
m
e
–
– I
D
DS
1000
10000
f=1MHz
V
V
=200V
7
5
DD
=10V
7
GS
5
3
2
3
2
Ciss
1000
7
5
100
3
2
7
5
100
7
5
ë
t (on)
3
2
d
3
2
10
0.1
10
0
5
10
15
20
25
30
35
40
45
50
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
Drain Current, I
–
– A
Drain-to-Source
V
o
ltage, V
— V
IT11739
IT11738
D
DS
No. A0553-3/7
2SK4085LS
V
GS
—
Q
g
A S
O
10
9
100
7
V
=200V
DS
=16A
5
I
I
=60A(PW
≤
10
μ
s)
DP
I
D
3
2
(*1)=16A
Dc
8
10
7
5
7
3
2
6
I
(*2)=11A
Dpack
5
1.0
Operation in this area
7
5
is limited by R
(on).
DS
4
3
2
3
0.1
7
5
2
3
2
1
0
*
1. Shows chip capability
*
2.
Our ideal heat dissipation condition
Tc=25
°
C
Single pulse
0.01
1.0
0
0
0
10
20
30
40
50
IT11740
2
3
5
7
2
3
5
7
2
3
5 7
10
100
1000
IT16814
Total Gate Charge, Qg
–
–
n
C
Drain-to-Source
V
o
ltage, V
DS
— V
P
—
T
a
P
—
T
c
D
D
45
40
35
30
25
20
15
10
2.5
2.0
1.5
1.0
0.5
0
5
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
–
–
°
C
Case Temperature, Tc
–
–
°
C
IT11730
IT11742
E
—
T
a
AS
120
100
80
60
40
20
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta
–
–
°
C
No. A0553-4/7
2SK4085LS
M
a
gaz
i
n
e Spec
i
fi
c
at
i
o
n
2SK4085LS-1E
No. A0553-5/7
2SK4085LS
Out
l
i
n
e Draw
i
n
g
2SK4085LS-1E
M
a
ss
(
g
)
Un
i
t
1.8
mm
* For reference
No. A0553-6/7
2SK4085LS
Note on usage : Since the 2SK4085LS is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No. A0553-7/7
