onsemi-NDPL100N10BG
| Part # | onsemi-NDPL100N10BG |
Download  | onsemi-NDPL100N10BG |
NDPL100N10B
Power MOSFET
ww
w
.onsemi.com
100V, 7.2m
Ω
, 100A, N-Channel
Features
•
Low On-Resistance
•
Low Gate Charge
•
High Speed Switching
V
R
(on) Max
I
DSS
DS
D Max
100A
7.2 m
Ω
@15V
8.7 m
Ω
@10V
100V
•
100% Avalanche Tested
•
Pb-Free and RoHS Compliance
Electrical Connection
Specifications
N-Channel
Absolute Maximum Ratings
at Ta = 25
°
C
2
Parameter
Drain to Source Voltage
Symbol
Value
100
Unit
V
V
V
DSS
1 : Gate
Gate to Source Voltage
Drain Current (DC)
20
V
GSS
2 : Drain
1
I
I
100
A
D
3 : Source
Drain Current (Pulse)
PW
≤
10
μ
s, duty cycle
≤
1%
Power Dissipation
Tc=25
°
C
400
DP
A
3
2.1
110
175
P
W
D
Tj
°
C
°
C
A
Junction Temperature
Marking
Tstg
−
55
t
o
+
175
100
Storage Temperature
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *
1
I
S
E
147
mJ
AS
Lead Temperature for Soldering
100N10
°
C
T
L
260
Purposes, 3mm from Case for 10 Seconds
LOT No.
B
Thermal Resistance Ratings
Parameter
1
2
3
TO-220-3L
Symbol
Value
1.36
Unit
Junction to Case Steady State
Junction to Ambient *
2
R
R
θ
JC
°
C/W
71.4
θ
JA
Note : *
1
V
=48
V
,
L
=100
μ
H, I
=40A (Fig.1)
AV
DD
*
2
Insertion mounted
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
March 2015 – Rev. 1
1
Publication Order Number :
NDPL100N10B/D
NDPL100N10B
Electrical Characteristics
at Ta = 25
°
C
Value
typ
Parameter
Symbol
Conditions
Unit
min
100
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(
)
I
=10mA, V
=0V
GS
V
μ
A
nA
V
BR DSS
D
I
I
V
V
V
V
=100V, V
=0V
GS
10
DSS
DS
GS
DS
DS
= 20V,
V =0V
DS
100
4
GSS
V
(th)
GS
=10V, I
=1mA
2
D
Forward Transconductance
g
=10V, I
=50A
75
S
FS
D
R
R
(on)1
(on)2
I
I
=50A, V
=15V
GS
6.0
6.7
7.2
8.7
m
Ω
m
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
D
D
Static Drain to Source On-State Resistance
=50A, V
=10V
GS
DS
Input Capacitance
Ciss
2,950
1,250
20
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=50V, f=1MHz
DS
t (on)
d
40
t
385
68
r
See Fig.2
Turn-OFF Delay Time
Fall Time
t (off)
d
t
52
f
Total Gate Charge
Qg
35
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Qgs
Qgd
V
=48V, V
=10V, I
=100A
DS GS
13
D
10
V
t
I =100A,
V =0V
1.1
1.5
SD
S
GS
130
400
ns
nC
See Fig.3
rr
I =100A,
V =0V,
V =50V,
di/dt=100A/
μ
s
GS DD
Q
S
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
D
L
≥50
Ω
G
NDPL100N10B
S
10V
0V
V
50
Ω
DD
Fig.3 Reverse Recovery Time Test Circuit
D
NDPL100N10B
L
G
S
V
DD
Driver MOSFET
2
NDPL100N10B
Package Dimensions
NDPL100N10BG
TO-220, 3-Lead / TO-220-3L
CASE 221AU
ISSUE O
unit : mm
1:Gate
2:Drain
3:Source
ORDERING INFORMATION
Device
Package
Shipping
note
TO-220, 3-Lead
TO-220-3L
NDPL100N10BG
50 pcs. / Tube
Pb-Free
Note on usage : Since the NDPL100N10B is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiarie
s
i
n the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pd
f
.
S
CILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilit
y
o
f its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other application
s
i
ntended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
5
