MSKSEMI-MMST4401
| Part # | MSKSEMI-MMST4401 |
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MMST4401
Product specification
MMST4401
FEATURES
Complementary to MMST4403
PACKAGE OUTLINE
MARKING
Small Surface Mount Package
1. BASE
2. EMITTER
3. COLLECTOR
K3X
SOT-323
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Value
Unit
Collector-Base Voltage
60
V
V
CBO
Collector-Emitter Voltage
Emitter-Base Voltage
40
6
V
V
V
CEO
V
EBO
I
C
Collector Current
600
200
625
mA
mW
℃
/W
Collector Power Dissipation
P
C
Thermal Resistance From Junction To Ambient
R
ΘJA
Operation Junction
and
T
J
,T
stg
℃
-55
～
+150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
=100µA, I
E
=0
Min
60
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=1mA, I
B
=0
40
V
I
E
=100µA, I
C
=0
6
V
V
CB
=35V, I
E
=0
100
500
nA
nA
V
CE
=35V, I
B
=0
Collector cut-off current
I
CEO
V
CE
=1V, I
C
=100µA
V
CE
=1V, I
C
=1mA
20
40
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=150mA
V
CE
=2V, I
C
=500mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CE
=10V,I
C
=20mA , f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
80
DC current gain
h
FE
100
40
300
0.4
0.75
0.95
1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
0.75
250
V
V
BE(sat)
V
MHz
pF
Transition frequency
f
T
6.5
Collector output capacitance
C
ob
Copyright© Msksemi Incorporated
MMST4401
Static Characteristic
h
FE
——
I
C
250
200
150
100
50
1000
COMMON
EMITTER
T
a
=25
℃
COMMON EMITTER
V
CE
= 1V
1mA
T
a
=100
℃
0.9mA
0.8mA
T
a
=25
℃
0.7mA
0.6mA
100
0.5mA
0.4mA
0.3mA
0.2mA
I
B
=0.1mA
0
10
600
0
1
2
3
4
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
I
C
V
BEsat
——
I
C
1000
1000
800
600
400
200
0
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
10
0.5
600
0.1
1
10
100
0.1
1
10
100
600
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
—— V
BE
f
T
—— I
C
500
600
COMMON EMITTER
CE
=1V
COMMON EMITTER
CE
=10V
T
a
=25
℃
V
V
100
10
1
100
0.1
10
0
200
400
600
800
1000
1200
10
20
30
40
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(mV)
P
C
—— T
a
C
ob
/C
ib
——
V
CB
/V
EB
400
300
200
100
0
100
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
10
C
ob
1
0.1
0
25
50
75
100
125
150
30
1
10
AMBIENT TEMPERATURE
T
a
(
℃
)
REVERSE VOLTAGE
V
(V)
Copyright© Msksemi Incorporated
MMST440
1
PACKAGEMECHANICALDATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
Min
Max
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A
A1
A2
b
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
c
D
E
E1
e
0.650 TYP
0.525 REF
0.026 T
Y
P
0.021 REF
e1
L
1.200
1.400
0.047
0.055
L1
ꢀ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
Suggested Pad Layout
Note:
1.Controlling dimension:in millimeters.
2.General tolerance:±0.05mm.
3.The pad layout is for reference purposes only.
REEL SPECIFICATION
P/N
PKG
QTY
MMST440
1
SOT-323
3000
Copyright© Msksemi Incorporated
MMST4401
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
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at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
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or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
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■
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production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
Semiconductor productthat you intend to use.
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