YFW-BTA26-800BW

Part #YFW-BTA26-800BW
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YFW-BTA26-800BW
BTA26-800BW TO-3P  
25A 3Quadrants TRIACs  
Product Summary  
Circuit diagram  
Symbol  
I

T(AV)  

Value  
25  
Unit  
A
V

DRM

V

RRM  

V

TM  

800  
V
1.55  
V
Features  
With high ability to withstand the shock loading of  
large current,With high commutation performances,  
3 quadrants products especially recommended for  
use on inductive load.  
TO-3P  
Application  
Washing machine, vacuums, massager, solid state relay, AC Motor speed regulation and so on.  
Order Information  
Part Number  
Package  
Marking  
Packing  
Packing Quantity  
BTA26-800BW  
TO-3P  
BTA26-800BW XXXX  
box  
600PCS/box  
Absolute maximum ratings (Ta=25°C unless otherwise noted)  
Parameter  
Repetitive peak off-state voltage  
Symbol  
Value  
800  
Unit  
V

DRM  

V

RRM  

V
V
A
Repetitive peak reverse voltage  
RMS on-state current  
800  
25  
I
T
(
RMS
)  
Non repetitive surge peak on-state current (full cycle, F=50Hz)  
I

TSM  

250  
A
l

2

t value for fusing (tp=10ms)  
Critical rate of rise of on-state current (I
G
=2 x |

G

T
)  
Peak gate current  
l

2

t  
dl/dt  
I

GM  

340  
50  
4
A

2

s  
A/μs  
A
Average gate power dissipation  
Junction Temperature  
P

G

(
AV
)  
T

J  

1
W
°C  
-40
~
+
125  
Storage Temperature  
T

STG  

-40 ~+150  
°C  
GuangDong YFW Electronics Co, Ltd.  
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BTA26-800BW TO-3P  
Electrical characteristics (T
A
=25°C, unless otherwise noted)  
Parameter  
Symbol  
Test Condition  
Value  
Unit  
I

GT  

Ⅰ
–
Ⅱ
–
Ⅲ  
Ⅰ
–
Ⅱ
–
Ⅲ  
MAX.  
MAX.  
50  
mA  
V
Gate trigger current  
V

D

=12V  
R

L

=33Ω  
Gate trigger voltage  
V

GT  

1.3  
V

D

=V

DRM

T

j

=125°C  
R

L

=3.3K
Ω
 
l

G

=1.2l

GT  

Gate non-trigger voltage  
V

GD  

Ⅰ
–
Ⅱ
–
Ⅲ  
Ⅰ
–
Ⅱ
–
Ⅲ  
MIN.  
0.2  
V
latching current  
Holding current  
I

L  

MAX.  
MAX.  
100  
50  
mA  
mA  
I

H  

I

T

=100mA  
Critical-rate of rise of commutation  
voltage  
V
D
=2/3V

DRM

Gate Open Tj=125°C  
I
TM
=35A tp=380μs  
dV

D

/dt  
MIN.  
1000  
V/μs  
STATIC CHARACTERISTICS  
Forward “on” voltage  
V

TM  

MAX.  
1.55  
V
Repetitive Peak Off-State Current  
Repetitive Peak Reverse Current  
I

DRM  

I

RRM  

T

j

=25°C  
MAX.  
MAX.  
10  
3
μA  
V

D

=V

DRM

V

R

=V

RRM  

T

j

=125°C  
mA  
THERMAL RESISTANCES  
Rth(j-c)
Junction to case(AC)  
Rth(j-a)
Junction to ambient  
TYP.  
TYP.  
0.9  
50  
°C/W  
°C/W  
Thermal resistance  
Ordering Information  
BT  
A
26  
–
800  
B
W
W: 3Q  
Triacs  
B:I

GT1-3

≤50mA  
A:TO-3P InsuIated  
I

T(RMS)

: 25A  
800:V

DRM

/V

RRM

≥800V  
GuangDong YFW Electronics Co, Ltd.  
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BTA26-800BW TO-3P  
Typical Characteristics  
GuangDong YFW Electronics Co, Ltd.  
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BTA26-800BW TO-3P  
Package Information  
TO-3P  
GuangDong YFW Electronics Co, Ltd.  
4 / 4