HUASHUO-HSBA3204
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HSBA3204
Dual N-Ch 30V Fast Switching MOSFETs
Description
Product Summary
V
DS
30
6.5
35
V
The HSBA3204 is the high cell density trenched
N-ch MOSFE
T
s
, which provide excellent RDSON
and gate charge for most applications.
R
DS(ON),typ
I
D
m
Ω
A
The HSBA3204 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
⚫
⚫
⚫
⚫
⚫
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
PRPAK5X6 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
30
Units
V
Drain-Source Voltage
V
GS
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
35
24.7
A
A
10.6
A
8.5
A
92
A
EAS
Single Pulse Avalanche Energy
3
57.8
mJ
A
I
AS
Avalanche Current
34
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
19.2
W
W
℃
℃
Total Power Dissipation
4
1.42
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
6.5
1
V
e
r 2.0
HSBA3204
Dual N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
△
BV
DSS
/
△
T
J
BVDSS Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=12A
0.027
6.5
11
—
V/
℃
8.5
14
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=10A
V
GS(th)
Gate Threshold Voltage
1.5
-5.8
—
2.5
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=15A
38
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.7
12.6
4.2
5.1
4.6
12.2
26.6
8
2.9
17.6
5.9
7.1
9.2
22
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=15V , V
GS
=4.5V , I
D
=12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
V
DD
=15V , V
GS
=10V , R
G
=3.3
I
D
=12A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
53
16
C
iss
C
oss
C
rss
Input Capacitance
1317
163
131
1844
228
183
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
I
F
=30A , dI/dt=100A/µs ,
T
J
=25
℃
Min.
—
Typ.
—
Max.
15
1
Unit
A
I
S
V
SD
t
rr
Continuous Source Current
1,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
V
—
9.2
2
—
nS
nC
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=34A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSBA3204
Dual N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
100
75
V
GS
=10V
GS
=7V
GS
=5V
GS
=4.5V
V
V
50
25
0
V
V
GS
=3V
0
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
12
I
D
=15A
10
8
8
6
V
DS
=15V
T
J
=150
℃
T
J
=25
℃
V
DS
=24V
6
4
4
2
0
2
0
0
0.3
0.6
0.9
0
6
12
18
24
30
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSBA3204
Dual N-Ch 30V Fast Switching MOSFETs
10000
1000
100
1000.00
F=1.0MHz
Ciss
10us
100.00
10.00
1.00
100us
10ms
Coss
Crss
100ms
DC
0.10
T
C
=25
℃
Single Pulse
10
0.01
1
5
9
13
17
21
25
0.1
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
T
ON
SINGLE
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.11 Unclamped Inductive Switching
Fig.10 Switching Time Waveform
4
V
e
r 2.0
