HL-20P06
| Part # | HL-20P06 |
Download  | HL-20P06 |
P-CH 60V Fast Switching MOSFETs
2
0
P
0
6
Product Summary
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
-60V
RDSON
48m
Ω
ID
-20A
100% EAS Guaranteed
TO252 Pin Configuration
Description
The 20P06
is the high cell density trenched
P-ch
MOSFETs, which provide excellent RDSON and
gate charge for
most of
the synchronous buck
converter applications.
The 20P06
meet the RoHS and Green Product
requirement 100% EAS guaranteed with full function
reliability approved.
Absolute Maximum Ratings
Symbol
Parameter
Value
-60
Unit
V
V
DS
Drain-Source
V
o
ltage
Gate-Sou
r
ce Voltage
V
GS
±
20
-20
V
Continuous Drain Current,
V
GS
@ -10
V
1
Continuous Drain Current,
V
GS
@ -10
V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
I
D
@T
C
=25
℃
=100
℃
=25
℃
=70
℃
A
I
D
@T
C
-12
-4.5
A
I
D
@T
@T
I
A
A
I
D
A
-4
A
DM
-30
A
Single Pulse
A
v
a
lanche Energy
3
EAS
18.1
-13
mJ
A
I
AS
Av
a
lanche Current
Total Power Dissipation
4
Total Power Dissipation
4
P
D
@T
C
=25
℃
25
W
W
℃
℃
P
D
@T
A
=25
℃
2
T
STG
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
Thermal Resistance Junction-
A
m
bient
1
Thermal Resistance Junction-Case
1
R
θ
JA
62
5
R
θ
JC
—
01
P-CH 60V Fast Switching MOSFETs
2
0
P
0
6
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
BV
DSS
Parameter
Test Condition
Min.
-60
Typ.
—
Max.
—
U
n
its
V
Drain-Source Breakdown
V
o
ltage
V
GS
=0
V
, I
Reference to 25
℃
,
=-1mA
GS
=-10V , I
GS
=-4.5
V
, I
D
=-250uA
△
BV
DSS
/
△
T
J
BV
DSS
Temperature Coefficient
—
-0.023
—
V/
℃
m
Ω
I
D
V
D
=-10A
=-6A
—
—
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
48
56
—
58
67
-2.5
—
Static Drain-Source On-Resistance
2
Gate Threshold
V
o
ltage
R
DS(ON)
V
D
V
GS(th)
V
V
GS
=V
DS
, I
=-250uA
D
△
V
GS(th)
V
GS(th)
Temperature Coefficient
4
m
V
/
℃
V
DS
=-24V ,
V
GS
=0
V
, T
DS
=-24V ,
V
GS
=0
V
, T
GS
=
±
20V ,
V
DS
=0V
DS
=-5V , I
=-15A
J
=25
℃
—
-1
I
DSS
Drain-Source Leakage Current
uA
V
J
=55
℃
—
-5
I
GSS
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
—
±
100
—
nA
S
gfs
V
D
12
6.1
3.1
1.8
2.6
8.6
33.6
6
Q
g
—
V
DS
=-15V ,
V
GS
=-4.5
V
,
Q
gs
gd
—
nC
I
D
=-15A
Q
—
T
d
(
o
n)
—
T
r
—
V
DD
=-15V ,
V
GS
=-10V ,
ns
R
G
=3.3
Ω
, I
=-15A
D
T
d
(
o
ff)
Turn-Off Delay Time
Fall Time
—
T
f
—
C
iss
oss
rss
Input Capacitance
585
100
85
—
C
C
Output Capacitance
Re
v
e
rse Transfer Capacitance
V
DS
=-15V , V
GS
=0
V
,
f
=1MHz
—
pF
—
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward
V
o
ltage
2
Re
v
e
rse Reco
v
e
ry Time
Test Condition
Min.
Typ.
—
Max.
-20
-30
-1.2
—
U
n
its
A
I
S
—
—
—
—
—
V
G
=V =0
V
,
F
orce Current
D
I
SM
SD
rr
rr
—
A
V
GS
=0
V
, I
=-15A , dI/dt=100
A
/µs ,
=25
℃
S
=-1A , T =25
℃
J
V
—
V
t
6.1
1.4
nS
nC
I
F
Re
v
e
rse Reco
v
e
ry Charge
T
J
Q
—
Note :
1
.
T
he data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2
.
T
he data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3
.
T
he EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,IAS=-19A
4
.
T
he power dissipation is limited by 150℃ junction temperature
5
.
T
he data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
02
P-CH 60V Fast Switching MOSFETs
2
0
P
0
6
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: On-Resistance v.s Gate-Source
Figure 3:Forward Characteristics Of Reverse
Figure 5:
Normalized VGS(th) vs. TJ
Figure 4: Gate Charge Characteristics
Figure 6: Normalized RDSON vs. TJ
03
P-CH 60V Fast Switching MOSFETs
20P06
Typical Performance Characteristics
Figure 7: Typical Capacitance Vs. Drain-Source Volt
a
F
g
i
e
g
ure 7: Safe Operating Area
Figure 9: Normalized Maximum Transient Thermal Impedance
Figure 10: Switching Time Waveform
hing Wa
04
P-CH 60V Fast Switching MOSFETs
2
0
P
0
6
Package Mechanical Data TO 252
05
