UMW-Youtai-Semiconductor-Co—Ltd–AO3416A
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R
UMW
UMW AO3416A
N-Channel
MOSFET
SOT
–
23
●
V
DS (V)
= 20V
●
I
D
= 6 A (V
GS
= 4.5V)
●
R
DS(ON)
＜
25m
Ω
(V
GS
= 4.5V)
●
R
DS(ON)
＜
33m
Ω
(V
GS
= 2.5V)
●
R
DS(ON)
＜
51m
Ω
(V
GS
= 1.8V)
1. GATE
2. SOURCE
3. DRAIN
D
G
S
■
Absolute Maximum Ratings Ta = 25
℃
Parameter
Symbol
V
DS
Rating
Unit
V
Drain-Source Voltage
20
Gate-Source Voltage
V
GS
±8
6
5
Ta=25
℃
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
I
D
A
W
Ta=70
℃
I
DM
30
1.4
Ta=25
℃
Ta=70
℃
P
D
0.9
Thermal Resistance.Junction- to-Ambient
t
≤
10sec
Steady State
90
R
thJA
℃
/W
℃
125
80
Thermal Resistance.Junction-to-Foot
Junction Temperature
R
thJF
T
J
150
-55 to 150
Storage Temperature Range
T
stg
1
友台半导体有限公司
R
UMW
UMW AO3416A
■
Electrical Characteristics Ta = 25
℃
Parameter
Symbol
V
DSS
Test Conditions
I
D
=250uA, V
GS
=0V
Min
20
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
V
DS
=20V, V
GS
=0V
V
DS
=20V, V
GS
=0V, Ta=70
℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
, I
D
=250
μ
A
V
DS =
5 V, V
GS
= 4.5 V
V
GS
=4.5V, I
D
=6.5A
V
GS
=2.5V, I
D
=5.5A
V
GS
=1.8V, I
D
=5A
1
5
Zero Gate Voltage Drain Current
I
DSS
u A
Gate-Body Leakage Current
Gate Threshold Voltage
On-State Drain Current
I
GSS
V
GS(th)
I
D(on)
uA
V
±
10
1.1
0.4
30
A
25
33
51
Static Drain-Source On-Resistance
R
DS(O
n
)
m
Ω
Forward Transconductance
Input Capacitance
g
FS
C
iss
V
DS
=5V, I
D
=6.5A
50
S
1295 1650
160
V
GS
=0V,V
DS
=10V,f=1MHz
pF
K
Ω
nC
Output Capacitance
C
oss
C
rss
R
g
Reverse Transfer Capacitance
Gate Resistance
87
V
GS
=0V,V
DS
=0V,f=1MHz
1.8
Total Gate Charge
Q
g
10
V
V
GS
=4.5V, V
DS
=10V, I
DS
=10V, ,V
GEN
=4.5V
D
=6.5A
Gate Source Charge
Q
gs
Q
gd
4.2
Gate Drain Charge
2.6
Turn-On DelayTime
t
d(on)
t
r
280
Turn-On Rise Time
328
ns
Turn-Off DelayTime
t
d(off)
t
f
3.76
2.24
R
L
=1.54
Ω
,R
G
=3
Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charg
Maximum Body-Diode Continuous Current
Diode Forward Voltage
t
rr
31
41
I
F
= 6.5A,
d
I
/d
t
= 100A/
μ
s
Q
rr
I
S
6.8
nC
A
2
1
V
SD
I
S
=1.0A,V
GS
=0V
0.62
V
*1 Pulse test: PW
≤
300us duty cycle
≤
2%.
2
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R
UMW
UMW AO3416A
■
Typical Characterisitics
30
25
20
15
10
5
V
DS
=5V
2.5V
25
1.8V
3.1V
20
15
10
5
4.5V
125
°
C
V
GS
=1.5V
25
°
C
0
0
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
30
1.6
1.4
1.2
1
V
GS
=2.5V
I
D
=5.5A
25
20
15
10
V
GS
=1.8V
V
GS
=1.8V
I
D
=5A
V
GS
=2.5V
V
GS
=4.5V
V
GS
=4.5V
I
D
=6.5A
0.8
0
25
50
75
100
125
150
175
0
2
4
6
8
10
I
D
(A)
0
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60
50
40
30
20
10
1.0E+01
I
D
=6.5A
1.0E+00
40
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
125
°
C
25
°
C
25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
3
友台半导体有限公司
R
UMW
UMW AO3416A
■
Typical Characterisitics
5
1800
1600
1400
1200
1000
800
V
DS
=10V
I
D
=6.5A
4
C
iss
3
2
1
0
600
400
C
oss
200
C
rss
0
0
2
4
6
8
10
12
0
5
10
15
20
Q
g
(nC)
V
DS
(Volts)
Figure 8: Ca
acitance Characteristics
p
Figure 7: Gate-Charge Characteristics
10000
1000
100
10
100.0
10.0
1.0
T
J(Max)
=150
°
C
T
A
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
100ms
0.1
T
J(Max)
=150
°
C
T
A
=25
°
C
10s
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
.
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
1
0.1
R
θ
JA
=125
°
C/W
P
D
0.01
0.001
Single Pulse
0.001
T
on
T
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4
友台半导体有限公司
R
UMW
UMW AO3416A
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.950 T
Y
P
.
0.550 REF.
0.037 T
Y
P
.
0.022 REF.
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
Marking
AGLX
U
Ordering information
Deliver
y
m
ode
Package
Baseqty
Order code
UMW AO3416A
Tape and reel
SOT-23
3000
5
友台半导体有限公司
