Vishay-Intertech-VS-81RIA80
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VS-80RIA…Pb
F
,
V
S-81RIA…Pb
F
,
V
S-82RIA…PbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 80 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-94 (TO-209AC)
• Designed and qualified for industrial level
• Material
categorization: For definitions of compliance
TO-94 (TO-209AC)
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
PRIMARY CHARACTERISTICS
I
T(AV)
80 A
V
DRM
/V
RRM
400 V, 800 V, 1200 V
1.60 V
V
TM
I
GT
120 mA
T
J
-40 °C to +125 °C
TO-94 (TO-209AC)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
UNITS
A
80
85
I
T(AV)
T
C
°C
I
T(RMS)
125
50 Hz
60 Hz
50 Hz
60 Hz
1900
A
I
TSM
1990
18
I
2
t
kA
2
s
16
V
DRM
/V
RRM
400 to 1200
110
V
t
q
Typical
μs
°C
T
J
-40 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
V
RSM
, MAXIMUM NON-REPETITIVE
I
DRM
/I
RRM
MAXIMUM
AT T
J
= 125 °C
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK AND OFF-STATE VOLTAGE
V
PEAK VOLTAGE
V
40
80
400
800
500
900
VS-80RIA
VS-81RIA
15
120
1200
1300
Revision: 27-Sep-17
Document Number: 94392
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-80RIA…Pb
F
,
V
S-81RIA…Pb
F
,
V
S-82RIA…PbF Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
VALUES UNITS
80
85
A
Maximum average on-state current
at case temperature
180° conduction, half sine wave
°C
Maximum RMS on-state current
I
T(RMS)
DC at 75 °C case temperature
125
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
1900
1990
1600
1675
18
No voltage
reapplied
A
Maximum peak, one-cycle
I
TSM
non-repetitive surge current
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
No voltage
16
Maximum I
2
t for fusing
I
2
t
kA
2
s
12.7
11.7
180.5
0.99
1.13
2.29
1.84
1.60
200
100 % V
RRM
reapplied
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
V
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
m
V
r
t2
V
TM
I
H
I
pk
= 250 A, T
J
= 25 °C, t
p
= 10 ms sine pulse
Maximum holding current
T
J
= 25 °C, anode supply 12 V resistive load
mA
Typical latching current
I
L
400
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
T
J
= 125 °C, V
d
= Rated V
DRM
, I
TM
= 2 x dI/dt snubber
0.2 μF, 15
, gate pulse: 20 V, 65
, t
p
= 6 μs, t
r
= 0.5 μs
Per JEDEC standard RS-397, 5.2.2.6.
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
300
A/μs
Gate pulse: 10 V, 15
source, t
p
= 6 μs, t
r
= 0.1 μs,
Typical delay time
t
d
t
q
1
V
d
= Rated V
DRM
, I
TM
= 50 Adc, T
J
= 25 °C
μs
I
TM
= 50 A, T
J
= T
J
maximum, dI/dt = -5 A/μs, V
R
= 50 V,
dV/dt = 20 V/μs, gate bias: 0 V 25
, t
p
= 500 μs
Typical turn-off time
110
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum critical rate of rise of
dV/dt
T
J
= 125 °C exponential to 67 % rated V
DRM
500
15
V/μs
mA
off-state voltage
Maximum peak reverse and
off-state leakage current
I
RRM
,
T
J
= 125 °C rated V
DRM
/V
RRM
applied
I
DRM
Revision: 27-Sep-17
Document Number: 94392
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-80RIA…Pb
F
,
V
S-81RIA…Pb
F
,
V
S-82RIA…PbF Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
VALUES UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
12
W
3
P
G(AV)
I
GM
T
J
= T
J
maximum, f = 50 Hz, d% = 50
3
A
+ V
GM
– V
GM
T
J
= T
J
maximum, t
p
5 ms
20
V
10
T
J
= – 40 °C
T
J
= 25 °C
270
120
60
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
I
GT
mA
V
Maximum required gate trigger/
T
J
= 125 °C
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 125 °C
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
3.5
2.5
1.5
6
V
GT
DC gate current not to trigger
DC gate voltage not to trigger
I
GD
Maximum gate current/voltage not to
trigger is the maximum value which
will not trigger any unit with rated
mA
V
T
J
= T
J
maximum
V
GD
0.25
V
DRM
anode to cathode applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
– 40 to 125
– 40 to 150
0.30
UNITS
Maximum operating junction
temperature range
T
J
°C
Maximum storage temperature range
T
Stg
Maximum thermal resistance,
junction to case
R
thJC
DC operation
K/W
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.1
15.5
(137)
N · m
(lbf · in)
Mounting torque,
10 %
14
(120)
Lubricated threads
Approximate weight
Case style
130
g
See dimensions – link at the end of datasheet
TO-94 (TO-209AC)
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.042
0.050
0.064
0.095
0.164
0.030
0.052
0.070
0.100
0.165
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94392
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-80RIA…Pb
F
,
V
S-81RIA…Pb
F
,
V
S-82RIA…PbF Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
80
R
I
A
S
e
ries
80
R
I
A
S
e
ries
(DC) = 0.30 K/W
R
(DC) = 0.30 K/W
Conduction
P
e
r
iod
thJC
R
thJC
Conduction Angle
30°
60°
90°
30°
120°
60°
90°
180°
80
120°
DC
180°
80
70
0
10 20 30 40 50 60 70 80 90
Average On-
s
t
ate Cu
r
r
e
nt (A)
0
20 40
60 80
100 120 140
Average On-
s
t
ate Current (A)
Fig. 2 – Current Ratings Characteristics
Fig. 1 – Current Ratings Characteristics
120
0
.
180°
6
110
K
/
W
120°
100
90°
90
80
70
60
50
40
30
20
10
0
60°
30°
1
.
4
K
RM S Lim it
/
W
2
K
/
W
Conduction Angle
80
R
I
A
S
e
ries
T =
125°C
J
0
10 20 30 40 50 60 70
Average On-
s
t
ate Current (A)
8
0
25
50
75
100
125
Maximum Allowable Ambient
T
e
mperatu
r
e (°C)
Fig. 3 – On-State Power Loss Characteristics
180
160
140
120
100
80
DC
180°
120°
90°
R
=
0
.
4
K
/
60°
W
–
D
30°
e
l
t
a
R
RM S L
i
m it
Conduction
P
e
r
i
o
d
80
R
IA S
e
ries
60
2
K
/
W
40
20
T =
125°C
J
0
0
20 40 60 80
100 120
Average On-
s
t
ate Cu
r
rent (A)
1
40
25
50
75
100
125
Maximum Allowable Ambient
T
e
mpe
r
a
tu
r
e (°C)
Fig. 4 – On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94392
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-80RIA…Pb
F
,
V
S-81RIA…Pb
F
,
V
S-82RIA…PbF Series
Vishay Semiconductors
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
Maximum Non Repetitive Surge Current
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
= 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
80
R
I
A
S
e
ries
80
R
I
A
S
e
ries
800
700
0.01
0.1
P
u
l
s
e T
r
a
in Dura
tion (
s
)
1
1
10
100
Number Of
E
q
ual Amplitude
H
a
lf Cycle Current
P
u
l
s
e
s(
N
)
Fig. 5 – Maximum Non-Repetitive Surge Current
Fig. 6 – Maximum Non-Repetitive Surge Current
10000
1000
100
10
T =
25°C
J
T =
125°C
J
80RIA Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
In st a n t a n e o
u
s On –
s
t a t e
V
o lt a g e
(V)
Fig. 7 – On-State Voltage Drop Characteristics
1
0.1
Steady State Value
= 0.30 K/W
R
thJC
(DC Operation)
0.01
0.001
80RIA Series
0.0001
0.001
0.01
0.1
1
10
S
q
u
a
r
e W
a
ve
P
u
l
s
e
D
uration (
s
)
Fig. 8 – Thermal Impedance Z
thJC
Characteristics
Revision: 27-Sep-17
Document Number: 94392
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-80RIA…Pb
F
,
V
S-81RIA…Pb
F
,
V
S-82RIA…PbF Series
Vishay Semiconductors
100
10
1
Rectangular gate pulse
(1) PGM = 100W,
tp = 500µs
a) Recommended load line for
rated di/dt : 20V, 30ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65ohms
tr<=1 µs
(2) PGM = 50W,
tp = 1ms
(3) PGM = 20W,
tp = 2.5ms
(4) PGM = 10W,
tp = 5ms
(1) (2)
(4)
(3)
(a)
(b)
VGD
Frequency Limited by PG(AV)
IGD
0.01
Device: 80RIA Series
0.1
0.1
0.001
1
10
100
1000
In
s
t
antaneousGate Cu
r
rent (A)
Fig. 9 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
8
0
RIA 120
M
PbF
1
2
3
4
5
6
7
1
2
3
–
–
–
Vi
s
hay
S
emiconductor
s
product
I
TAV
x 10 A
0 = eyelet terminal
s
(gate and auxiliary cathode lead
s
)
1 = fa
s
t-on terminal
s
(gate and auxiliary cathode lead
s
)
2 = flag terminal
s
(gate and auxiliary cathode terminal
s
)
4
5
6
–
–
–
RIA = e
ss
ential part number
Voltage code x 100 = V
RRM
(
s
ee Voltage Rating
s
table)
None =
s
tud ba
s
e 1/2″-20UNF- 2 A thread
s
M =
s
tud ba
s
e metric thread
s
M12 x 1.75 E 6
None =
s
tandard production
7
–
–
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Sep-17
Document Number: 94392
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for 80RIA Series
DIMENSIONS
in millimeters (inches)
Glass metal seal
2.5 (0.10) MAX.
16.5 (0.65) MAX.
Ø 8.5 (0.33)
) MIN.
Ø 4.3 (0.17)
9.5 (0.37
Flexible lead
20 (0.79) MIN.
C.S. 16 mm
2
(0.025 s.i.)
C.S. 0.4 mm
2
(0.0006 s.i.)
Red silicon rubber
Red cathode
157 (6.18)
170 (6.69)
215 10
(8.46 0.39)
White gate
Fast-on terminals
Red shrink
55 (2.17)
MIN.
AMP. 280000-1
REF-250
White shrink
24 (0.94)
MAX.
Ø 23.5 (0.92) MAX.
10.0 (0.39) MAX.
21 (0.83)
MAX.
SW 27
1/2″-20UNF-2A
29.5 (1.16) MAX.
Document Number: 95362
Revision: 17-Sep-10
1
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Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2023
Document Number: 91000
1
