SMC-Sangdest-Microelectronicstronic–Nanjing-SST138C-800E
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SST138C-600E
SST138C-800E
Technical Data
Data Sheet N2169, Rev.-
SST138 Series
12A TRIACs
Circuit Diagram
TO-220C
Description
SST138 series triacs with low holding and latching current are especially recommended for use on middle and small
resistance type power load.
Maximum Ratings:
Characteristics
Symbol
T
stg
Condition
Max.
-40-150
-40-125
600/800
Units
℃
–
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage(T
j
=25
℃
)
–
–
–
–
–
T
j
℃
V
DRM
V
Repetitive peak reverse voltage(T
j
=25
℃
)
V
RRM
V
DSM
V
RSM
600/800
V
V
V
Non repetitive surge peak Off-state voltage
V
DRM
+ 100
V
RRM
+ 100
Non repetitive peak reverse voltage
RMS on-state current
I
(TRMS)
TO-220C(T
C
=110
℃
)
12
95
A
Non repetitive surge peak on-state current
(tp=20ms)
I
2
t value for fusing (tp=10ms)
–
I
TSM
I
2
t
A
45
50
10
2
A
2
s
–
Ⅰ
–
Ⅱ
–
Ⅲ
Critical rate of rise of on-state current
dI/dt
A/μs
(I
G
=2
×
I
GT
)
Ⅳ
–
Peak gate current
I
GM
P
GM
A
–
Average gate power dissipation
Peak gate power
0.5
5
W
W
–
P
G(AV)
China – Germany – Korea – Singapore – United
States
SST138C-600E
SST138C-800E
Technical Data
Data Sheet N2169, Rev.-
Electrical Characteristics
(Tj=25
℃
unless otherwise specified)
Symbol
Test Condition
Quadrant
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅳ
Value
10
Unit
I
GT
MAX
mA
V
D
=12V R
L
=33Ω
25
V
GT
V
GD
ALL
MAX
MIN
1.5
0.2
30
V
V
V
D
=V
DRM
T
j
=125
℃
R
L
=3.3KΩ
ALL
Ⅰ
–
Ⅲ
Ⅱ
–
Ⅳ
I
L
MAX
mA
I
G
=1.2I
GT
40
I
H
I
T
=100mA
MAX
MIN
25
mA
dV/dt
V
D
=2/3V
DRM
Gate Open T
j
=125
℃
50
V/μs
Static Characteristics
Symbol
Condition
I
TM
=15A tp=380μs,Tj=25
℃
Max.
Units
V
V
TM
I
DRM
I
RRM
1.6
5
1
V
D
=V
DRM
V
R
=V
RRM
, Tj=25
℃
V
D
=V
DRM
V
R
=V
RRM
, Tj=125
℃
μA
mA
Thermal Resistances
Symbol
Condition
Junction to case(AC)
TO-220AC
Value
Units
Rth(j-c)
1.4
℃
/W
Ordering Information
S ST
138 C
-600 E
SMC Diode Solutions
Triacs
E:I
GT1-3
≤ 10mA I
GT4
≤ 25mA
I
T(RMS)
:12A
600:V
DRM
/V
RRM
≥ 600V
800:V
DRM
/V
RRM
≥ 800V
C:TO-220C
Device
Package
Shipping
SST138C-600E
SST138C-800E
TO-220C
50pcs/ Tube
China – Germany – Korea – Singapore – United
States
SST138C-600E
SST138C-800E
Technical Data
Data Sheet N2169, Rev.-
Marking Diagram
Where XXXXX is YYWWL
SST138C-600E =
Part name
YY
WW
L
= Year
= Week
= Lot Number
Mechanical Dimensions TO-220C
Millimeters
Inches
Typ.
SYMBOL
Min.
Typ.
Max.
Min.
Max.
A
B
C
C2
C3
4.40
0.70
0.45
1.23
2.20
4.60
0.90
0.60
1.32
2.60
0.173
0.028
0.018
0.048
0.087
0.181
0.035
0.024
0.052
0.102
D
8.90
9.90
6.30
9.90
10.3
6.90
0.350
0.39
0.248
0.390
0.406
0.272
E
F
G
H
2.54
3.39
0.1
28.0
29.8
1.102
1.173
L1
L2
L3
0.133
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
ϕ
3.6
0.142
Ratings and Characteristics Curves
FIG.1:
Maximum power dissipation versus RMS
FIG.2:
RMS on-state current versus case
on-state current
temperature
I
T(RMS)
(A)
18
P(w)
20
α=180°
15
12
9
15
10
5
TO-220C
6
3
0
T
c
(
℃
)
I
T(RMS)
(A)
0
0
3
6
9
12
15
0
25
50
75
100
125
China – Germany – Korea – Singapore – United
States
SST138C-600E
SST138C-800E
Technical Data
Data Sheet N2169, Rev.-
FIG.3:
Surge peak on-state current versus
FIG.4:
On-state characteristics (maximum
number of cycles
values)
I
TM
(A)
100
I
TSM
(A)
105
t=20ms
One cycle
90
75
60
45
Tj=Tjmax
10
30
Tj=25
℃
15
0
V
TM
(V)
Number of cycles
100
1
0
1
2
3
4
5
1
10
1000
FIG.5:
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I
2
t(
Ⅰ
–
Ⅱ
–
Ⅲ
:dI/dt < 50A/μs;
FIG.6:
Relative variations of gate trigger current
versus junction temperature
Ⅳ
:dI/dt < 10A/μs)
I
TSM
(A), I
2
t (A
2
s)
I
GT
(Tj) /I
GT
(Tj=25
℃
)
4.0
dI/dt
(
Ⅰ
–
Ⅱ
–
Ⅲ
)
1000
3.0
2.0
1.0
0.0
I
TSM
I
GT3
I
GT4
dI/dt
(
Ⅳ
)
100
10
I
GT1
&I
GT2
I
2
t
Tj (
℃
)
40 60
tp(ms)
-40 -20
0
20
80 100
120 140
0.01
0.1
1
10 20
FIG.7:
Relative variations of holding current
FIG.8:
Relative variations of latching current
versus junction temperature
versus junction temperature
I
H
(Tj) /I
H
(Tj=25
℃
)
I
L
(Tj) /I
L
(Tj=25
℃
)
3.0
3.0
2.5
2.0
2.5
2.0
I
L
1.5
1.0
1.5
1.0
I
H
0.5
0.0
0.5
0.0
Tj (
℃
)
40 60
Tj (
℃
)
40 60
-40 -20
0
20
80 100 120
140
-40 -20
0
20
80 100 120
140
China – Germany – Korea – Singapore – United
States
SST138C-600E
SST138C-800E
Technical Data
Data Sheet N2169, Rev.-
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall
SMC Diode Solutions
be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s).
SMC Diode Solution
assumes no responsibility for any intellectual property
claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall
SMC Diode Solutions
be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or
SMC Diode Solutions
.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC
Diode Solutions
.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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States
