HXY-MOSFET-2N7002W
| Part # | HXY-MOSFET-2N7002W |
Download  | HXY-MOSFET-2N7002W |
HUAXUANYANG
HXY
2N7002W
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The 2N700
2
W
u
ses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5
V
. This
device is suitable for use as a
D
S
G
Battery protection or in other Switching application.
SOT-323
General Features
D
!
V
DS
= 60V
I
D
=0.11
5
A
“
R
DS(ON)
<
3
Ω
@ V
GS
=10 V
! ”
“
!
G
“
ESD Rating
：
HBM
≥
2000V
!
S
Application
N-Channel MOSFET
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
2N700
2
W
SOT-323
3000
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
A
V
DS
±20
V
GS
Drain Current-Continuous
0.115
I
D
Maximum Power Dissipation
0.2
-55
T
o
1
50
625
W
℃
P
D
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance,Junction-to-Ambient
(Note 2)
T ,T
STG
J
R
θJA
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
2N7002W
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Test
conditions
M
in
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
(BR)DSS
V
(GS)
th
l
GSS
60
1
V
GS
=0
V
,
I
D
=250
µ
A
V
DS
=V
GS
, I
D
=250
µ
A
V
DS
=0
V
,
V
GS
=
±
2
0
V
V
DS
=60
V
,
V
GS
=0 V
V
GS
=10
V
, V
DS
=7 V
V
GS
=10
V
,
I
D
=115
m
A
V
1.6
2.5
±80
80
Gate-body Leakage
nA
nA
mA
Zero Gate Voltage Drain Current
On-state Drain Current
I
DSS
I
D(
on
)
500
3
1.
3
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
Diode Forward Voltage
R
DS(
o
n)
g
fs
Ω
V
GS
=4.5V,
I
D
=50
m
A
2
5
V
DS
=10
V
,
I
D
=200
m
A
V
GS
=10
V
,
I
D
=500
m
A
80
ms
V
3.75
0.375
1.2
50
V
DS(on)
V
GS
=5
V
,
I
D
=50
m
A
V
V
SD
C
iss
I
S
=115mA, V
GS
=0 V
0.55
V
Input Capacitance
*
V
DS
=25
V
,
V
GS
=0V, f=1MHz
pF
Output Capacitance
C
oss
C
r
ss
25
*
Reverse Transfer Capacitance
5
*
SWITCHING TIME
Ω
,
V
DD
=25
V
,
R
L
=50
20
40
t
d(on)
t
d(off)
Turn-on Time
*
ns
I
D
=500mA,V
GEN
=10 V
Turn-off Time
*
Ω
R
G
=25
*These parameters have no way to verify.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
2N7002W
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Characteristics
Transfer Characteristics
Output Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
T =25
℃
T
a
=25
℃
V
GS
=10V,9V,8V,7V,6V
a
V
GS
=5V
Pulsed
Pulsed
V
GS
=4V
V
GS
=3V
0
1
2
3
4
5
0
2
4
6
GATE TO SOURCE VOLTAGE
V
GS
(V)
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
R
DS(ON)
——
I
D
R
DS(ON)
—— V
GS
3
2
1
0
6
4
2
0
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
V
GS
=5V
I
D
=500mA
I
D
=50mA
V
GS
=10V
0.0
0.2
0.4
0.6
0.8
1.0
0
6
12
18
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
—— V
SD
2
T
a
=25
℃
1
Pulsed
0.3
0.1
0.03
0.01
3E-3
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
1.4
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
2N7002W
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
ꢀ
SOT-323 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
0.650 TYP
0.525 REF
0.026 T
Y
P
0.021 REF
1.200
1.400
0.047
0.055
L1
Κ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
2N7002W
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
■ In the event that any or all HUA XUAN YANG ELECTRONICS products(including technical data, services) described or contained herein
are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA
XUAN YANG ELECTRONICS CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production.
HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding
its use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc.
When designing equipment, refer to the “Delivery Specification” for the HUA XUAN YANG ELECTRONICS product that you intend to use.
Shenzhen HuaXuanYang Electronics CO.,LTD
