Vishay-Intertech-VS-ST330C12L0L

VS-ST330C Series  

Vishay Semiconductors  

Phase Control Thyristors  

(Hockey PUK Version), 720 A  

FEATURES  

• Center amplifying gate  

• Metal case with ceramic insulator  

• International standard case E-PUK (TO-200AB)  

• Designed and qualified for industrial level  

RoHS  

COMPLIANT  

• Material

 

categorization: for definitions of compliance  

please see

E-PUK (TO-200AB)  

TYPICAL APPLICATIONS  

• DC motor controls  

PRIMARY CHARACTERISTICS  

• Controlled DC power supplies  

• AC controllers  

I

T(AV)  

720 A  

V

400 V, 800 V, 1200 V, 1400 V, 1600 V  

1.96 V  













V

TM  

I

GT  

100 mA  

T

J  

-40 °C to +125 °C  

E-PUK (TO-200AB)  

Single SCR  

Package  

Circuit configuration  

MAJOR RATINGS AND CHARACTERISTICS  

PARAMETER  

TEST CONDITIONS  

VALUES  

720  

UNITS  

A

°C  

A

I

T(AV)  

I

T(RMS)  

I

TSM  

I

2

t  

T

hs  

55  

1420  

T

hs  

25  

°C  

50 Hz  

60 Hz  

50 Hz  

60 Hz  

9000  

A

9420  

405  

kA

2

s  

370  

V

400 to 1600  

100  

V

t

q  

Typical  

μs  

°C  

T

J  

-40 to 125  

ELECTRICAL SPECIFICATIONS  

VOLTAGE RATINGS  

V

V

RSM

, MAXIMUM  

NON-REPETITIVE PEAK VOLTAGE  

V

I

DRM

/I

RR

M

MAXIMUM  

AT T

J

= T

J  

VOLTAGE  

CODE  

TYPE NUMBER  

PEAK AND OFF-STATE VOLTAGE  

V

MAXIMUM mA  

04  

08  

12  

14  

16  

400  

800  

500  

900  

VS-ST330C..C  

50  

1200  

1400  

1600  

1300  

1500  

1700  

Revision: 27-Sep-17  

Document Number: 94407  

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T

VS-ST330C Series  

Vishay Semiconductors  

ABSOLUTE MAXIMUM RATINGS  

PARAMETER  

SYMBOL  

I

T(AV)  

TEST CONDITIONS  

VALUES UNITS  

720 (350)  

55 (75)  

1420  

9000  

9420  

7570  

7920  

405  

A

Maximum average on-state current



 

at heatsink temperature  

180° conduction, half sine wave

  

double side (single side) cooled  

°C  

Maximum RMS on-state current  

I

T(RMS)  

DC at 25 °C heatsink temperature double side cooled  

t = 10 ms  

t = 8.3 ms  

t = 10 ms  

t = 8.3 ms  

t = 10 ms  

t = 8.3 ms  

t = 10 ms  

t = 8.3 ms  

No voltage  

reapplied  

A

Maximum peak, one-cycle

  

non-repetitive surge current  

I

TSM  

100 % V

RRM  

reapplied  

Sinusoidal half wave,

  

initial T

J

= T

J

maximum  

No voltage  

reapplied  

370  

Maximum I

2

t for fusing  

I

2

t  

kA

2

s  

287  

100 % V

RRM  

reapplied  

262  

Maximum I

2



t for fusing  

I

2



t  

V

T(TO)1  

V

T(TO)2  

r

t1  

t = 0.1 to 10 ms, no voltage reapplied  

4050  

0.91  

kA

2



s  

Low level value of threshold voltage  

High level value of threshold voltage  

Low level value of on-state slope resistance  

High level value of on-state slope resistance  

Maximum on-state voltage  

(16.7 % x



x I

T(AV)

< I <



x I

T(AV)

), T

J

= T

J

maximum  

(I >



x I

T(AV)

), T

J

= T

J

maximum  

V

0.92  

(16.7 % x



x I

T(AV)

< I <



x I

T(AV)

), T

J

= T

J

maximum  

(I >



x I

T(AV)

), T

J

= T

J

maximum  

0.58  

m

  

V

r

t2  

0.57  

V

TM  

I

H  

I

pk

= 1810 A, T

J

= T

J

maximum, t

p

= 10 ms sine pulse  

1.96  

Maximum holding current  

600  

T

J

= 25 °C, anode supply 12 V resistive load  

mA  

Typical latching current  

I

L  

1000  

SWITCHING  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

VALUES UNITS  

Maximum non-repetitive rate of

  

rise of turned-on current  

Gate drive 20 V, 20



, t

r



1 μs

  

T

J

= T

J

maximum, anode voltage



80 % V

DRM  

dI/dt  

1000  

A/µs  

Gate current 1 A, dI

g

/dt = 1 A/μs

  

Typical delay time  

t

d  

t

q  

1.0  

V

d

= 0.67 % V

DRM

, T

J

= 25 °C  

µs  

I

TM

= 550 A, T

J

= T

J

maximum, dI/dt = 40 A/μs,

  

Typical turn-off time  

100  

V

R

= 50 V, dV/dt = 20 V/μs, gate 0 V 100



, t

p

= 500 μs  

BLOCKING  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

VALUES UNITS  

Maximum critical rate of rise of

  

off-state voltage  

dV/dt  

T

J

= T

J

maximum linear to 80 % rated V

DRM  

T

J

= T

J

maximum, rated V

DRM

/V

RRM

applied  

500  

50  

V/µs  

mA  

Maximum peak reverse and

  

off-state leakage current  

I

RRM  

,

I

DRM  

Revision: 27-Sep-17  

Document Number: 94407  

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VS-ST330C Series  

Vishay Semiconductors  

TRIGGERING  

VALUES  

UNITS  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

T

J

= T

J

maximum, t

p



5 ms  

TYP. MAX.  

Maximum peak gate power  

P

GM  

P

G(AV)  

I

GM  

10.0  

W

Maximum average gate power  

T

J

= T

J

maximum, f = 50 Hz, d% = 50  

2.0  

3.0  

20  

Maximum peak positive gate current  

Maximum peak positive gate voltage  

Maximum peak negative gate voltage  

T

J

= T

J

maximum, t

p



5 ms  

A

V

+ V

GM  

– V

GM  

T

J

= T

J

maximum, t

p



5 ms  

5.0  

T

J

= -40 °C  

T

J

= 25 °C  

200  

100  

50  

–

200  

–

DC gate current required to trigger  

DC gate voltage required to trigger  

I

GT  

mA  

Maximum required gate trigger/

  

T

J

= 125 °C  

T

J

= -40 °C  

T

J

= 25 °C  

T

J

= 125 °C  

current/voltage are the lowest  

value which will trigger all units  

12 V anode to cathode applied  

2.5  

1.8  

1.1  

–

V

GT  

V

3.0  

–

Maximum gate current/voltage  

not to trigger is the maximum  

T

J

= T

J

maximum value

 

which will not trigger any  

unit with rated V

DRM

anode to  

cathode applied  

DC gate current not to trigger  

DC gate voltage not to trigger  

I

GD  

10  

mA  

V

V

GD  

0.25  

THERMAL AND MECHANICAL SPECIFICATIONS  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

VALUES  

-40 to 125  

-40 to 150  

0.09  

UNITS  

Maximum operating junction temperature range  

Maximum storage temperature range  

T

J  

°C  

T

Stg  

DC operation single side cooled  

DC operation double side cooled  

DC operation single side cooled  

DC operation double side cooled  

Maximum thermal resistance, junction to heatsink  

R

thJ-hs  

0.04  

K/W  

0.02  

Maximum thermal resistance, case to heatsink  

Mounting force,

 

10 %  

R

thC-hs  

0.01  

9800  

(1000)  

N

(kg)  

Approximate weight  

Case style  

83  

g

See dimensions – link at the end of datasheet  

E-PUK (TO-200AB)  



R

thJ-hs

CONDUCTION  

SINUSOIDAL CONDUCTION  

RECTANGULAR CONDUCTION  

CONDUCTION ANGLE  

TEST CONDITIONS  

UNITS  

SINGLE SIDE

 

DOUBLE SIDE

 

SINGLE SIDE

 

DOUBLE SIDE  

180°  

120°  

90°  

0.012  

0.014  

0.017  

0.025  

0.043  

0.011  

0.012  

0.015  

0.022  

0.036  

0.008  

0.014  

0.019  

0.026  

0.043  

0.007  

0.013  

0.017  

0.023  

0.037  

T

J

= T

J

maximum  

K/W  

60°  

30°  

Note  

•

The table above shows the increment of thermal resistance R

thJ-hs

when devices operate at different conduction angles than DC  

Revision: 27-Sep-17  

Document Number: 94407  

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T

VS-ST330C Series  

Vishay Semiconductors  

130  

120  

110  

100  

90  

130  

120  

110  

100  

90  

ST

3

30C..C

S

e

r

ies  

ST

3

30C . . C

S

e

r

ie s  

(

S

i

ngle

S

i

d

e Cooled)  

thJ-hs  

(Double

S

i

d

e Cooled)  

R

(DC) = 0.04

K

/

W  

R

(DC) = 0.09

K

/

W  

th

J

-hs  

80  

Conduction

P

e

r

i

o

d  

Conduct

i

o

n Angle  

70  

30°  

60  

50  

60°  

30°  

60°  

90°  

90°  

120°  

40  

120°  

180°  

180°  

30  

80  

20  

DC  

10  

70  

0

200 400 600 800

 

100

0

1

200 1400 1600  

Average On-

s

t

ate Cu

r

rent (A)  

0

50 100

 

150 200 250 300 350 400  

Average On-

s

t

ate Cu

r

rent (A)  

Fig. 1 – Current Ratings Characteristics  

Fig. 4 – Current Ratings Characteristics  

130  

1400  

ST

3

30C . . C

S

e r

i

e s  

180°  

120°  

90°  

120  

110  

100  

90  

(

S

i

ngle

S

i

d

e Coo

l

e

d)  

1200  

1000  

800  

600  

400  

200  

0

R

(DC) = 0.09 K

/

W  

thJ-hs  

60°  

RM S L

i

m it  

30°  

Conduction

P

e

r

i

o

d  

80  

70  

60  

Conduction Angle  

ST

3

30C . . C

S

e r

i

e s  

50  

60°  

40  

30°  

90°  

T =

 

125°C  

J

30  

120°  

180°  

DC  

20  

0

100 200 300 400 500 600 700 800 900  

Average On-

s

t

ate Cu

r

rent (A)  

0

100 200 300 400 500 600 700 800  

Average On-

s

t

ate Cur

r

e

nt (A)  

Fig. 2 – Current Ratings Characteristics  

Fig. 5 – On-State Power Loss Characteristics  

130  

1800  

DC  

ST

3

30C . . C

S

e r

i

e s  

120  

110  

100  

90  

180°  

(Double

S

i

d

e Cooled)  

1600  

120°  

R

(DC) = 0.04

K

/

W  

th

J

-hs  

1400  

1200  

1000  

800  

600  

400  

200  

0

90°  

60°  

30°  

RM S L

i

m it  

80  

Conduction Angle  

70  

60  

Conduction

P

e

r

i

o

d  

ST

3

30C..C

S

e

ries  

30°  

50  

60°  

90°  

120°  

40  

180°  

T =

 

125°C  

J

30  

20  

0

200  

400  

600  

800  

1000  

0

200 400 600 800

 

1000 1200  

Average On-

s

t

ate Current (A)  

Average On-

s

t

ate Current (A)  

Fig.  

3 – Current Ratings Characteristics  

Fig. 6 – On-State Power Loss Characteristics  

Revision: 27-Sep-17  

Document Number: 94407  

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T

VS-ST330C Series  

Vishay Semiconductors  

9000  

8500  

8000  

7500  

7000  

6500  

6000  

5500  

5000  

4500  

4000  

3500  

8000  

7500  

7000  

6500  

6000  

5500  

5000  

4500  

4000  

3500  

Maximum Non

R

e

pet

i

t

i

ve

S

u

rge Current  

Ver

s

u

s

P

u

l

s

e T

r

a

i

n Dur

a

tion. Control  

At Any

R

a

ted

L

o

ad Condition And With  

R

a

ted V  

Applied

F

o

l

lowing

S

u

rge.  

RRM  

Ini

t

i

a

l T =

1

25°C  

Of Conduction May

N

o

t

B

e

M

a

i

ntained.  

J

I

n

itial T = 125°C  

@60 Hz 0.0083 s  

@50 Hz 0.0100 s  

J

No Vol

t

age

R

e

app

l

i

e

d  

R

a

ted V  

R

e

applied  

RRM  

ST

3

30 C . . C

S

e

r

ie s  

ST

3

30C . . C

S

e

r

ie s  

0.01  

0.1  

Pul

s

e T

r

a

 

in Dura

 

tion (

s

)  

1

1

10  

100  

Num

b

er Of

E

q

ual Amplitude Half Cycle Current

P

u

l

s

e

s(

N

)  

Fig. 7 – Maximum Non-Repetitive Surge Current  

Single and Double Side Cooled  

Fig. 8 – Maximum Non-Repetitive Surge Current  

Single and Double Side Cooled  

10000  

T = 25°

 

C  

J

T = 125°

 

C  

J

1000  

ST

3

30C..C

S

e

r

i

e

s  

100  

0

1

2

3

4

5

6

7

I

n

s

t

antaneousOn-

s

t

ate Voltage (V)  

Fig. 9 – On-State Voltage Drop Characteristics  

0.1  

0.01  

St e a d y

 

St a t e

 

V a

l

u e  

= 0.09 K/ W  

R

thJ-hs  

(

S

i

ngle

S

i

d

e Cooled)  

= 0.04 K/ W  

R

thJ-hs  

(Double

S

i

d

e Cooled)  

(DC Operat

i

o

n)  

ST3 3

0

C . . C

S

e r

i

e s  

1

0.001  

0.001  

0.01  

0.1  

10  

Sq u a r e

 

W a v e

P

u lse

 

D u r a t io n

 

( s)  

Fig. 10 – Thermal Impedance Z

thJ-hs

Characteristics  

Revision: 27-Sep-17  

Document Number: 94407  

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VS-ST330C Series  

Vishay Semiconductors  

100  

R

e

ctangu

l

a

r

g

ate pu

l

s

e  

(1)

P

G

M = 10W,

 

tp =

4

m

s  

a)

R

e

commended

l

o

a

d

l

ine for  

rated di

/

dt :

2

0V, 10ohms; tr<=1 µs  

b)

R

e

commended load

l

ine for  

<=30

%

r

ated di

/

dt :

1

0V, 10ohms  

tr<=1 µs  

(2)

P

G

M = 20W,

 

tp =

2

m

s  

(3)

P

G

M = 40W,

 

tp =

1

m

s  

(4)

P

G

M = 60W,

 

tp = 0.66 ms  

10  

1

(a)  

(b)  

(2)  

(1)  

(3) (4)  

VGD  

I

G

D  

F

r

e

quency

L

i

mited by

P

G

(AV)  

10 100  

D e v ic e :

 

S

T

3

30C . . C

S

e r

i

e s  

0.1  

0

.

1  

0.001  

0.01  

1

I

n

s

t

antaneousGate Cu

r

rent (A)  

Fig. 11 – Gate Characteristics  

ORDERING INFORMATION TABLE  

Device code  

VS- ST  

33  

0

C

16  

C

1

–

1

2

3

4

5

6

7

8

9

1

2

3

–

–

Vi

s

hay

S

emiconductor

s

product  

Thyristor  

–

–

E

ss

ential part number  

0 = converter grade  

4

5

6

7

8

–

–

–

–

C = ceramic PUK  

Voltage code x 100 = V

RRM

(

s

ee Voltage Rating

s

table)  

C = PUK ca

s

e E-PUK (TO-200AB)  

0 = eyelet terminal

s

(gate and auxiliary cathode un

s

oldered lead

s

)  

1 = fa

s

t-on terminal

s

(gate and auxiliary cathode un

s

oldered lead

s

)  

2 = eyelet terminal

s

(gate and auxiliary cathode

s

oldered lead

s

)  

3 = fa

s

t-on terminal

s

(gate and auxiliary cathode

s

oldered lead

s

)  

None = 500 V/μ

s

(

s

tandard

s

election)  

L = 1000 V/μ

s

(

s

pecial

s

election)  

9

–

Critical dV/dt:  

LINKS TO RELATED DOCUMENTS  

Dimensions  

Revision: 27-Sep-17  

Document Number: 94407  

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Outline Dimensions  

Vishay Semiconductors  

E-PUK (TO-200AB)  

DIMENSIONS

in millimeters (inches)  

Anode to gate  

Creepage distance: 11.18 (0.44) minimum  

Strike distance: 7.62 (0.30) minimum  

25.3 (0.99)  

DIA. MAX.  

0.3 (0.01) MIN.  

C

G

14.1/15.1  

(0.56/0.59)  

A

0.3 (0.01) MIN.  

25.3 (0.99)  

DIA. MAX.  

Gate terminal for  

1.47 (0.06) DIA.  

pin receptacle  

Note:  

A = Anode  

40.5 (1.59) DIA. MAX.  

C = Cathode  

G

=

G

ate  

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep  

6.5 (0.26)  

4.75 (0.19)  

25° 5°  

42 (1.65) MAX.  

28 (1.10)  

Quote between upper and lower pole pieces has to be considered after  

application of mounting force (see thermal and mechanical specification)  

Revision: 12-Jul-17  

Document Number: 95075  

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Legal Disclaimer Notice  

Vishay  

Disclaimer  

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  

disclosure relating to any product.  

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  

purpose, non-infringement and merchantability.  

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product  

with the properties described in the product specification is suitable for use in a particular application. Parameters provided in  

datasheets and / or specifications may vary in different applications and performance may vary over time. All operating  

parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  

Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited  

to the warranty expressed therein.  

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and  

for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of  

any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.  

Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website  

or for that of subsequent links.  

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please  

contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  

any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  

© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  

Revision: 01-Jan-2023  

Document Number: 91000  

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