STMicroelectronics-STP46NF30

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STMicroelectronics-STP46NF30
STB46NF30, STP46NF30,  
STW46NF30  
N-
channel 300 V, 0.063 Ω typ., 42 A STripFET™ II  
Power MOSFETs in D²PAK, TO-220 and TO-247 packages  
Datasheet – production data  
TAB  
Features  
P

W  

Order code  
STB46NF30  
STP46NF30  
STW46NF30  
V

DSS  

R

DS(on)

max.  
I

D  

300 W  
300 V  
< 0.075 Ω  
42 A  
D

2

PAK  
TAB  
Exceptional dv/dt capability  
100% avalanche tested  
Low gate charge  
3
3
2
2
TO-220  
TO-247  
1
1
Applications  
Figure 1: Internal schematic diagram  
Switching applications  
Description  
D(2, TAB)  
These Power MOSFETs have been developed  
using STMicroelectronics’ unique STripFET  
process, which is specifically designed to  
minimize input capacitance and gate charge. This  
renders the devices suitable for use as primary  
switch in advanced high-efficiency isolated DC-  
DC converters for telecom and computer  
applications, and applications with low gate  
charge driving requirements.  
G(1)  
S(3)  
AM01475v1
_
T
a
b  
Table 1: Device summary  
Order code  
STB46NF30  
STP46NF30  
STW46NF30  
Marking  
Package  
D²PAK  
Packing  
Tape and reel  
46NF30  
TO-220  
TO-247  
Tube  
August 2016  
DocID018493 Rev 2  
1/20  
This is information on a product in full production.  

STB46NF30, STP46NF30, STW46NF30  
Electrical ratings  
1
Electrical ratings  
Table 2: Absolute maximum ratings  
Symbol  
Parameter  
Value  
Unit  
V
V

DS  

V

GS  

I

D  

Drain-source voltage  
300  
±20  
42  
Gate-source voltage  
V
Drain current (continuous) at T

C

= 25 °C  
Drain current (continuous) at T

C

= 100 °C  
Drain current (pulsed)  
A
I

D  

27  
A
168  
300  
2
A
P

TOT  

Total dissipation at T

C

= 25 °C  
Derating factor  
W
W/°C  
V/ns  
T

J  

Peak diode recovery voltage slope  
Operating junction temperature range  
Storage temperature range  
10  
– 55 to 175  
°C  
T

stg  

Notes:  

(1)

Pulse width limited by safe operating area.  
(2)  
I
≤ 34 A, di/dt ≤ 200 A/μs, V

DD

= 80% V

(BR)DSS

,V

DS peak

< V

(BR)DSS  

SD  
Table 3: Thermal data  
Value  
Symbol  
Parameter  
Unit  
TO-220 TO-247  
D²PAK  
R

thj-case  

R

thj-amb  

Thermal resistance junction-case  
0.5  
°C/W  
°C/W  
°C/W  
°C  
62.5  
50  
Thermal resistance junction-ambient max  
Thermal resistance junction-pcb  
30  
30  
R

thj-p

T

J  

Maximum lead temperature for soldering purpose  
300  
Notes:  

(1)

When mounted on FR-4 board of 1inch², 2oz Cu.  
Table 4: Avalanche characteristics  
Parameter  
Avalanche current, repetitive or not repetitive (pulse  
width limited by T

jmax  

Symbol  
Value  
Unit  
26  
A
)
Single pulse avalanche energy (starting Tj = 25 °C,  
I

D

= I

AR

, V

DD

= 50 V)  
E

AS  

290  
mJ  
Notes:  

(1)

Pulse width limited by T

jmax  

DocID018493 Rev 2  
3/20  
 
 
 
 

Electrical characteristics  
STB46NF30, STP46NF30, STW46NF30  
2
Electrical characteristics  
T

C

= 25 °C unless otherwise specified  
Table 5: On/off-state  
Symbol  
Parameter  
Test conditions  
V

GS

= 0 V, I

D

= 1 mA  
V

GS

= 0 V, V

DS

= 300 V  
Min. Typ.  
Max. Unit  
V

(BR)DSS

Drain-source breakdown voltage  
300  
V
1
µA  
I

DSS  

Zero gate voltage drain current  
V

GS

= 0 V, V

DS

= 300 V  
T

C

= 125

10  
µA  
I

GSS  

Gate body leakage current  
Gate threshold voltage  
V

DS

= 0 V, V

GS

= ±20 V  
V

DS

= V

GS

, I

D

= 250 µA  
±100  
4
nA  
V
V

GS(th)  

R

DS(on)  

2
3
Static drain-source on-resistance
 
V

GS

= 10 V, I

D

= 17 A  
0.063 0.075  
Ω
Notes:  

(1)

Defined by design, not subject to production test.  
Table 6: Dynamic  
Symbol  
C

iss  

Parameter  
Input capacitance  
Output capacitance  
Test conditions  
Min. Typ. Max. Unit  
–
–
3200  
442  
–
–
pF  
pF  
C

oss  

V

DS

= 25 V, f = 1 MHz, V

GS

= 0  
V
Reverse transfer  
capacitance  
C

rss  

–
57  
–
pF  
t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on delay time  
Rise time  
–
–
–
–
–
–
25  
38  
80  
46  
90  
16  
–
–
–
–
–
–
ns  
ns  
ns  
ns  
nC  
nC  
V

DD

= 150 V, I

D

= 17 A,  
R

G

= 4.7 Ω, V

GS

= 10 V  
Turn-off delay time  
Fall time  
Q

g  

Q

gs  

Total gate charge  
Gate-source charge  
V

DD

= 240 V, I

D

= 34 A  
V

GS

= 10 V  
Q

gd  

Gate-drain charge  
–
40  
–
nC  
4/20  
DocID018493 Rev 2  
 
 

STB46NF30, STP46NF30, STW46NF30  
Symbol Parameter  
Electrical characteristics  
Min. Typ. Max. Unit  
Table 7: Source-drain diode  
Test conditions  
Source-drain current  
I

SD  

–
–
34  
136  
1.6  
A
A
Source-drain current  
(pulsed)  
Forward on voltage  
I

SD

= 34 A, V

GS

= 0 V  
t

rr  

–
–
V
Reverse recovery time  
I

SD

= 34 A, di/dt = 100 A/µs,  
V

DD

= 60 V  
215  
1.7  
ns  
Reverrse recovery  
charge  
Q

rr  

–
µC  
Reverse recovery current
 

I

RRM  

t

rr  

–
–
–
16  
252  
2.3  
A
Reverse recovery time  
I

SD

= 34 A, di/dt = 100 A/µs,  
V

DD

= 60 V, T

j

= 150 °C  
ns  
µC  
Reverse recovery charge  
Q

rr  

Reverse recovery current  
I

RRM  

–
19  
A
Notes:  

(1)

Pulse width limited by safe operating area  

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%  
DocID018493 Rev 2  
5/20  
 
 

Electrical characteristics  
STB46NF30, STP46NF30, STW46NF30  
2.2  
Electrical characteristics (curves)  
Figure 2: Safe operating area for D²PAK and  
TO-220  
Figure 3: Thermal impedance for D²PAK and  
TO-220  
Figure 4: Safe operating area for TO-247  
Figure 5: Thermal impedance for TO-247  
Figure 6: Output characteristics  
Figure 7: Transfer characteristics  
6/20  
DocID018493 Rev 2  

STB46NF30, STP46NF30, STW46NF30  
Figure 8: Gate charge vs gate-source voltage  
Electrical characteristics  
Figure 9: Static drain-source on-resistance  
W
Figure 10: Capacitance variations  
Figure 11: Normalized gate threshold voltage  
vs temperature  
Figure 12: Normalized on-resistance vs  
temperature  
Figure 13: Normalized V

(BR)DSS

vs temperature  
DocID018493 Rev 2  
7/20  

Electrical characteristics  
Figure 14: Avalanche energy vs starting T

j  

STB46NF30, STP46NF30, STW46NF30  
Figure 15: Source-drain diode forward vs  
temperature  
8/20  
DocID018493 Rev 2  

STB46NF30, STP46NF30, STW46NF30  
Test circuits  
3
Test circuits  
Figure 16: Test circuit for resistive load  
switching times  
Figure 17: Test circuit for gate charge  
behavior  
Figure 18: Test circuit for inductive load  
switching and diode recovery times  
Figure 19: Unclamped inductive load test  
circuit  
Figure 21: Switching time waveform  
Figure 20: Unclamped inductive waveform  
DocID018493 Rev 2  
9/20  

Package information  
STB46NF30, STP46NF30, STW46NF30  
4
Package information  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  
ECOPACK

®

is an ST trademark.  
4.1  
D²PAK (TO-263) package information  
Figure 22: D²PAK (TO-263) type A package outline  
0079457_A_rev22  
10/20  
DocID018493 Rev 2  

STB46NF30, STP46NF30, STW46NF30  
Table 8: D²PAK (TO-263) type A package mechanical data  
mm  
Typ.  
Package information  
Dim.  
Min.  
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
1.10  
10  
Max.  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
8.00  
1.50  
10.40  
8.90  
7.25  
A
A1  
b
b2  
c
c2  
D
D1  
D2  
E
7.75  
1.30  
E1  
E2  
e
8.50  
6.85  
8.70  
7.05  
2.54  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.4  
V2  
0°  
8°  
DocID018493 Rev 2  
11/20  

Package information  
STB46NF30, STP46NF30, STW46NF30  
Figure 23: D²PAK (TO-263) recommended footprint (dimensions are in mm)  
12/20  
DocID018493 Rev 2  

STB46NF30, STP46NF30, STW46NF30  
Package information  
4.2  
D²PAK (TO-263) packing information  
Figure 24: Tape outline  
DocID018493 Rev 2  
13/20  

Package information  
STB46NF30, STP46NF30, STW46NF30  
Figure 25: Reel outline  
Table 9: D²PAK tape and reel mechanical data  
Tape Reel  
mm  
mm  
Dim.  
Dim.  
Min.  
10.5  
15.7  
1.5  
Max.  
10.7  
15.9  
1.6  
Min.  
Max.  
A0  
B0  
D
A
B
C
D
G
N
T
330  
1.5  
12.8  
20.2  
24.4  
100  
13.2  
26.4  
30.4  
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
Base quantity  
Bulk quantity  
1000  
1000  
50  
T
0.25  
23.7  
0.35  
24.3  
W
14/20  
DocID018493 Rev 2  

STB46NF30, STP46NF30, STW46NF30  
Package information  
4.3  
TO-220 type A package information  
Figure 26: TO-220 type A package outline  
DocID018493 Rev 2  
15/20  

Package information  
STB46NF30, STP46NF30, STW46NF30  
Table 10: TO-220 type A mechanical data  
mm  
Dim.  
Min.  
4.40  
0.61  
1.14  
0.48  
15.25  
Typ.  
Max.  
4.60  
0.88  
1.55  
0.70  
15.75  
A
b
b1  
c
D
D1  
E
1.27  
10.00  
2.40  
4.95  
1.23  
6.20  
2.40  
13.00  
3.50  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14.00  
3.93  
e
e1  
F
H1  
J1  
L
L1  
L20  
L30  
øP  
Q
16.40  
28.90  
3.75  
2.65  
3.85  
2.95  
16/20  
DocID018493 Rev 2  

STB46NF30, STP46NF30, STW46NF30  
Package information  
4.4  
TO-247 package information  
Figure 27: TO-247 package outline  
DocID018493 Rev 2  
17/20  

Package information  
STB46NF30, STP46NF30, STW46NF30  
Table 11: TO-247 package mechanical data  
mm  
Dim.  
Min.  
4.85  
2.20  
1.0  
Typ.  
Max.  
5.15  
2.60  
1.40  
2.40  
3.40  
0.80  
20.15  
15.75  
5.60  
14.80  
4.30  
A
A1  
b
b1  
b2  
c
2.0  
3.0  
0.40  
19.85  
15.45  
5.30  
14.20  
3.70  
D
E
e
5.45  
18.50  
5.50  
L
L1  
L2  
ØP  
ØR  
S
3.55  
4.50  
5.30  
3.65  
5.50  
5.70  
18/20  
DocID018493 Rev 2  

STB46NF30, STP46NF30, STW46NF30  
Revision history  
5
Revision history  
Table 12: Document revision history  
Date  
Revision Changes  
28-Sep-2012  
1
2
First release.  
24-Aug-2016  
Minor text changes  
DocID018493 Rev 2  
19/20  

STB46NF30, STP46NF30, STW46NF30  
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY  
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications
, and  
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST  
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of or
der  
acknowledgement.  
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the  
design of Purchasers’ products.  
No license, express or implied, to any intellectual property right is granted by ST herein.  
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.  
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.  
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  
© 2016 STMicroelectronics
–
All rights reserved  
20/20  
DocID018493 Rev 2  

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