A-Power-microelectronics-AP100N03AD

AP100N03AD  

30V N-Channel Enhancement Mode MOSFET  

Description  

The AP100N03AD uses advanced trench technology  

to provide excellent R

DS(ON)

, low gate charge and  

operation with gate voltages as low as 4.5

V

. This  

device is suitable for use as a Battery protection  

or in other Switching application.  

General Features  

V

DS

=30V I

D

=100A  

R

DS(ON)

< 6.0mΩ @ V

GS

=10V

（

Type

：

4.8mΩ

）  

Application  

Battery protection  

Load switch  

Uninterruptible power supply  

Package Marking and Ordering Information  

Product ID  

Pack  

Marking  

Qty(PCS)  

AP100N03AD  

TO-252-3L  

AP100N03AD XXXX YYYY  

2500  

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Rating  

30  

Units  

V

V

DS  

Drain-Source Voltage  

V

GS  

Gate-Sou

r

ce Voltage  

V

±

20  

1

0

0  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Pulsed Drain Current

2  

A

I

D

@T

C

=25

℃  

5

9  

A

I

D

@T

C

=75

℃  

I

DM  

EAS  

240  

A

Single Pulse Avalanche Energy

3  

56  

mJ  

A

I

AS  

Avalanche Current  

15  

T

o

tal Power Dissipation

4  

46  

W

W

P

D

@T

C

=25

℃  

P

D

@T

A

=25

℃  

T

STG  

T

o

tal Power Dissipation

4  

2.72  

-55 to 175  

-55 to 175  

62  

Storage

T

e

mperature Range  

Operating Junction

T

e

mperature Range  

Thermal Resistance Junction-Ambient

1  

Thermal Resistance Junction-Case

1  

℃

℃

T

J  

R

θ

JA  

℃

/W  

℃

/W  

R

θ

JC  

2.72  

AP100N03AD RVE1.0  

永源微電子科技有限公司  

AP100N03AD  

30V N-Channel Enhancement Mode MOSFET  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

V(BR)DSS  

IDSS  

Parameter  

Test Condition  

V

GS

=0

V

,

I

D

=250μA  

V

DS

=30

V

,

V

GS

= 0

V

,  

V

DS

=0

V

,

V

GS

= ±20V  

V

DS

= V

GS

, I

D

=250μA  

V

GS

=10

V

,

I

D

=30A  

V

GS

=4.5

V

,

I

D

=20A  

Min.  

Typ.  

32  

Max.  

–

Units  

V

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

Gate Threshold Voltage  

30  

–

–

1.0  

±100  

2.5  

6.0  

12  

μA  

nA  

V

IGSS  

–

–

VGS(th)  

1.0  

1.5  

4.8  

7.5  

1614  

–

–

–

RDS(on)  

Ciss  

Static Drain-Source on-Resistance  

Input Capacitance  

mΩ  

pF  

–

V

DS

=15

V

,

V

GS

=0

V

, f

 

=  

1.0MHz  

Coss  

Crss  

Q

g  

Output Capacitance  

Reverse Transfer Capacitance  

T

o

tal Gate Charge  

–

–

–

245  

215  

33.7  

–

–

–

pF  

pF  

nC  

V

DS

=15

V

,

I

D

=30A,  

V

GS

=10V  

Qgs  

Qgd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

Turn-on Delay Time  

–

–

–

8.5  

7.5  

7.5  

–

–

–

nC  

nC  

ns  

td(on)  

V

DS

=15

V

,  

I

D

=30A, R

GEN

=3Ω,  

V

GS

=10V  

t

r  

Turn-on Rise Time  

–

14.5  

–

ns  

td(off)  

Turn-off Delay Time  

Turn-off Fall Time  

–

–

–

35.2  

9.6  

–

–

–

ns  

ns  

A

t

f  

IS  

Maximum Continuous Drain to Source Diode Forward Current  

Maximum Pulsed Drain to Source Diode Forward Current  

70  

ISM  

–

–

–

–

280  

1.2  

A

V

VSD  

Drain to Source Diode Forward Voltage  

V

GS

= 0

V

,

I

S

=30A  

Note :  

1

、

The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.  

2

、

The data tested by pulsed , pulse width

≦

300us , duty cycle

≦

2%  

3

、

The EAS data shows Max. rating . The test condition is VDD=25V

,

VGS=10

V

,

L=0.1mH

,

IAS=15A  

4

、

The power dissipation is limited by 175

℃

junction temperature  

5

、

The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.  

AP100N03AD RVE1.0  

永源微電子科技有限公司  

AP100N03AD  

30V N-Channel Enhancement Mode MOSFET  

Typical Characteristics  

Figure1: Output Characteristics  

Figure 2: Typical Transfer Characteristics  

Figure 3:On-resistance vs. Drain Current  

Figure 4: Body Diode Characteristics  

Figure 5: Gate Charge Characteristics  

Figure 6: Capacitance Characteristics  

AP100N03AD RVE1.0  

永源微電子科技有限公司  

AP100N03AD  

30V N-Channel Enhancement Mode MOSFET  

Figure 7: Normalized Breakdown Voltage vs.  

Figure 8: Normalized on Resistance vs  

Junction Temperature  

Junction Temperature  

Figure 9: Maximum Safe Operating Area  

vs. Case Temperature  

Figure 10: Maximum Continuous Drain Current  

Figure.11: Maximum Effective  

Transient Thermal Impedance, Junction-to-Ca  

AP100N03AD RVE1.0  

永源微電子科技有限公司  

AP100N03AD  

30V N-Channel Enhancement Mode MOSFET  

Package Mechanical Data:TO-252-3L  

E

Dimensions  

A

B2  

Ref.  

Millimeters  

Typ.  

Inches  

Typ.  

C2  

V 1  

Min.  

2.10  

0

Max.  

Min.  

0.083  

0

Max.  

0.098  

0.004  

0.034  

0.216  

0.024  

0.023  

0.248  

2.50  

0.10  

0.86  

5.48  

0.60  

0.58  

6.30  

A

A2  

B

0.66  

5.18  

0.40  

0.44  

5.90  

0.026  

0.202  

0.016  

0.017  

0.232  

B2  

C

C2  

D

C

5.30REF  

0.209REF  

D1  

E

B

G

6.40  

4.63  

4.47  

9.50  

1.09  

1.35  

6.80  

0.252  

0.182  

0.176  

0.374  

0.043  

0.053  

0.268  

DETAIL A  

E1  

G

V1  

4.67  

10.70  

1.21  

0.184  

0.421  

0.048  

0.065  

H

V 2  

L

1.65  

L2  

V1  

V2  

V1  

7°  

7°  

E1  

L2  

0°  

6°  

0°  

6°  

DETAIL A  

TO-252  

Reel Spectification-TO-252  

B

D0  

Dimensions  

P0  

P2  

T

Ref.  

Millimeters  

Typ.  

15.90 16.00

 

16.10  

Inches  

Typ.  

t1  

Min.  

Max.  

Min.  

0.626  

0.065  

0.291  

0.055  

0.055  

0.154  

0.311  

0.075  

0.270  

Max.  

A

A

W

E

0.630 0.634  

0.069 0.073  

0.295 0.299  

0.059 0.063  

0.059 0.063  

1.65  

7.40  

1.40  

1.40  

3.90  

7.90  

1.90  

6.85  

1.75  

7.50  

1.50  

1.50  

4.00  

8.00  

2.00  

6.90  

1.85  

7.60  

1.60  

1.60  

4.10  

8.10  

2.10  

7.00  

D1  

F

K0  

P1  

D0  

D1  

P0  

P1  

P2  

A0  

B0  

K0  

T

A0  

B

B

B

5°  

0.157  

0.161  

20  

A

A

0.315 0.319  

0.079 0.083  

0.271 0.276  

Φ329  

10.45 10.50 10.60  

0.411 0.413 0.417  

Φ13  

2.68  

0.24  

2.78  

2.88  

0.27  

0.105  

0.009  

0.004  

0.109 0.113  

0.011  

t1  

0.10  

10P0  

39.80  

40.00 40.20 1.567  

1.575 1.583  

AP100N03AD RVE1.0  

永源微電子科技有限公司  

AP100N03AD  

30V N-Channel Enhancement Mode MOSFET  

Attention  

1,Any and all APM Microelectronics products described or contained herein do not have specifications  

that can handle applications that require extremely high levels of reliability, such a

s

l

ife support systems,  

aircraft’s control systems, or other applications whose failure can be reasonably expected to result in  

serious physical and/or material damage. Consult with your APM Microelectronics representative nearest  

you before using any APM Microelectronics products described or contained herein in such applications.  

2,APM Microelectronics assumes no responsibility for equipment failures that result from usin

g

p

roducts  

at values that exceed, even momentarily, rated values (such as maximum ratings, operatingcondition  

ranges, or other parameters) listed in products specifications of any and all APM Microelectronics  

products described or contained herein.  

3, Specifications of any and all APM Microelectronics products described or contained her

e

i

nstipulate the  

performance, characteristics, and functions of the descri

b

e

d products in the independent state, and are  

not guarantees of the performance, characteristics, and functions of thedescribed products as mounted  

in the customer

’

s products or equipment. To verify symptoms andstates that cannot be evaluated in an  

independent device, the customer should always evaluate and test devices mounted in the customer

’

s  

products or equipment.  

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliabilityproducts.  

However, any and all semiconductor products fail with some probability. It is possible tha

t

t

hese  

probabilistic failures could give rise to accidents or events that could endanger human lives that could  

give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment,  

adopt safety measures so that these kinds of accidents or events canno

t

o

ccur. Such measures include  

but are not limited to protective circuits and error prevention circuits for safe design, redundant  

design,and structural design.  

5,In the event that any or all APM Microelectronics products(including technical data, services) described  

or contained herein are controlled under any of applicable local export control laws and regulations, such  

products must not be exported without obtaining the export license from the authorities concerned in  

accordance with the above law.  

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or  

mechanical, including photocopying and recording, or any information storage or retrieval system, or  

otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.  

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it i

s

n

ot  

guaranteed for volume production. APM Microelectronics believes information herein is accurate and  

reliable, but no guarantees are made or implied regarding its use or any infringements o

f

i

ntellectual  

property rights or other rights of third parties.  

8, Any and all information d

e

s

cribed or contained herein are subject to change without notice du

e

t

o  

product/technology improvement,etc. When designing equipment, refer to the “DeliverySpecification” for  

the APM Microelectronics product that you Intend to use.  

AP100N03AD RVE1.0  

永源微電子科技有限公司  

AP100N03AD  

30V N-Channel Enhancement Mode MOSFET  

Edition  

Date  

Change  

Rve1.0  

2021/5/1  

Initial release  

Copyright Attribution“APM-Microelectronice”  

AP100N03AD RVE1.0  

永源微電子科技有限公司