A-Power-microelectronics-AP100N03P
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AP100N03P
/
T
30V N-Channel Enhancement Mode MOSFET
Description
The AP100N03
P
/T
uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
V
DS
= 30V
I
D
=100 A
R
DS(ON)
< 5.5mΩ @ V
GS
=10V
（
Type
：
4.5mΩ
）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
AP100N03P
AP100N03T
Pack
Marking
Qty(PCS)
1000
TO-220-3L
TO-263-3L
AP100N03P XXX YYYY
AP100N03T XXX YYYY
800
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
30
V
VGSS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
IDM
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
note1
±20
100
46
V
A
A
300
56
A
EAS
Single Pulsed Avalanche Energy
note2
T
o
tal Power Dissipation
4
mJ
W
68
P
D
@T
C
=25
℃
R
θ
JA
R
θ
JA
RθJC
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Ambient
1
(t ≤10s)
Thermal Resistance, Junction to Case
62
25
℃
/W
℃
/W
℃
/W
2.2
TJ, TSTG
Operating and Storage
T
e
mperature Range
-55 to +175
℃
AP100N03P/T RVE3.9
永源微電子科技有限公司
AP100N03
P
/
T
30V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
V(BR)DSS
△
BVDSS/
△
TJ
VGS(th)
RDS(on)
RDS(on)
IDSS
Parameter
Test Condition
Min. Typ. Max.
Units
Drain-Source Breakdown Voltage
BVDSS
T
e
mperature Coefficient
Gate Threshold Voltage
V
GS
=0
V
,
I
D
=250μA
30
32
0.028
1.6
4.5
8.0
–
–
—
V
V/
℃
V
—
Reference to 25
℃
, ID=1mA
V
DS
= V
GS
, I
D
=250μA
V
GS
=10
V
,
I
D
=30A
1.2
2.5
5.5
9.5
1.0
±100
–
Static Drain-Source on-Resistance note3
Static Drain-Source on-Resistance note3
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Input Capacitance
–
–
–
–
–
mΩ
mΩ
μA
nA
pF
V
GS
=4.5
V
,
I
D
=20A
V
DS
=30
V
,
V
GS
= 0
V
,
V
DS
=0
V
,
V
GS
= ±20V
IGSS
–
C
iss
1614
V
DS
=15
V
,
V
GS
=0
V
,
f = 1.0MHz
Coss
Crss
Q
g
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
–
–
–
245
215
33.7
–
–
–
pF
pF
nC
V
DS
=15
V
,
I
D
=30A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Turn-on Delay Time
–
–
–
8.5
7.5
7.5
–
–
–
nC
nC
ns
td(on)
V
DS
=15
V
,
I
D
=30A, R
GEN
=3Ω,
V
GS
=10V
t
r
Turn-on Rise Time
–
14.5
–
ns
td(off)
t
f
Turn-off Delay Time
Turn-off Fall Time
–
–
35.2
9.6
–
–
ns
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
70
A
ISM
–
–
–
–
280
1.2
A
V
VSD
Drain to Source Diode Forward Voltage
V
GS
= 0
V
,
I
S
=30A
Note :
1
、
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width .The EAS data shows Max. rating .
3
、
The test cond
≦
300us duty cycle
≦
2%, duty cycle ition is VDD=24VGS=10
V
,
L=0.1mH,IAS=15A
4
、
The power dissipation is limited by 175
℃
junction temperature
5
、
The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
AP100N03P/T RVE3.9
永源微電子科技有限公司
AP100N03
P
/
T
30V N-Channel Enhancement Mode MOSFET
Typical Characteristics
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 4: Body Diode Characteristics
Figure 5: Gate Charge Characteristics
Figure 6: Capacitance Characteristics
AP100N03P/T RVE3.9
永源微電子科技有限公司
AP100N03
P
/
T
30V N-Channel Enhancement Mode MOSFET
Figure 7: Normalized Breakdown Voltage vs.
Figure 8: Normalized on Resistance vs
Junction Temperature
Junction Temperature
Figure 9: Maximum Safe Operating Area
vs. Case Temperature
Figure 10: Maximum Continuous Drain Current
Figure.11: Maximum Effective
Transient Thermal Impedance, Junction-to-Case
AP100N03P/T RVE3.9
永源微電子科技有限公司
AP100N03
P
/
T
30V N-Channel Enhancement Mode MOSFET
AP100N03P/T RVE3.9
永源微電子科技有限公司
AP100N03
P
/
T
30V N-Channel Enhancement Mode MOSFET
Attention
1,Any and all APM Microelectronics products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such a
s
l
ife support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your APM Microelectronics representative nearest
you before using any APM Microelectronics products described or contained herein in such applications.
2,APM Microelectronics assumes no responsibility for equipment failures that result from usin
g
p
roducts
at values that exceed, even momentarily, rated values (such as maximum ratings, operatingcondition
ranges, or other parameters) listed in products specifications of any and all APM Microelectronics
products described or contained herein.
3, Specifications of any and all APM Microelectronics products described or contained her
e
i
nstipulate the
performance, characteristics, and functions of the descri
b
e
d products in the independent state, and are
not guarantees of the performance, characteristics, and functions of thedescribed products as mounted
in the customer
’
s products or equipment. To verify symptoms andstates that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
’
s
products or equipment.
4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliabilityproducts.
However, any and all semiconductor products fail with some probability. It is possible tha
t
t
hese
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment,
adopt safety measures so that these kinds of accidents or events canno
t
o
ccur. Such measures include
but are not limited to protective circuits and error prevention circuits for safe design, redundant
design,and structural design.
5,In the event that any or all APM Microelectronics products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.
7, Information (including circuit diagrams and circuit parameters) herein is for example only; it i
s
n
ot
guaranteed for volume production. APM Microelectronics believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements o
f
i
ntellectual
property rights or other rights of third parties.
8, Any and all information d
e
s
cribed or contained herein are subject to change without notice du
e
t
o
product/technology improvement,etc. When designing equipment, refer to the “DeliverySpecification” for
the APM Microelectronics product that you Intend to use.
AP100N03P/T RVE3.9
永源微電子科技有限公司
AP100N03
P
/
T
30V N-Channel Enhancement Mode MOSFET
Edition
Date
Change
Rve3.8
2018/1/31
Initial release
Rve3.9
2019/12/01
Reduce RDS(on) and QG Ciss
Copyright Attribution“APM-Microelectronice”
AP100N03P/T RVE3.9
永源微電子科技有限公司
