A-Power-microelectronics-AP34N20P
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AP34N20P
200V N-Channel Enhancement Mode MOSFET
Description
The AP34N20P is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS =200V,ID =34A
RDS(ON) <85mΩ@ VGS=10V
Application
Power amplifier
motor drive
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP34N20P
TO-220-3
L
AP34N20P XXX YYYY
1000
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Symbol
VDSS
ID
Parameter
Value
Unit
V
Drain-Source Voltage
200
34
Drain Current -continuous
Drain Current -pulse
A
IDM
VGSS
EAS
112
±30
588
28
A
Gate-Source Voltage
V
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
IAR
EAR
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
15.8
5.5
mJ
V/ns
dv/dt
158
-55
～
+150
300
W
℃
PD TC=25
℃
TJ
，
TSTG
TL
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes
Thermal Resistance, Junction to Case
℃
Rth(j-c)
Rth(j-A)
0.79
℃
/W
℃
/W
62.5
Thermal Resistance, Junction to Ambient
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臺灣永源微電子科技有限公司
AP34N20P
200V N-Channel Enhancement Mode MOSFET
Electrical Characteristics Diagrams
Symbol
BV
DSS
Parameter
Drain-Source Voltage
Tests conditions
I
D
=250μA, V
GS
=0V
Min Typ Max
Units
200
–
0.19
–
–
V
ΔBVDSS /ΔTJ
–
–
–
I
D
=250μA, referenced to 25
℃
V/
℃
μA
Breakdown Voltage
T
emperature Coefficient
1
IDSS
V
DS
=200
V
,
V
GS
=0V, T
C
=25
℃
Zero Gate Voltage Drain Current
Gate-body leakage current, forward
Gate-body leakage current, reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input capacitance
IGSSF
IGSSR
VGS(th)
RDS(ON)
g
fs
V
DS
=0
V
,
V
GS
=30V
V
DS
=0
V
,
V
GS
=-30V
–
–
–
100
nA
–
-100 nA
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V , I
D
=14.0A
V
DS
= 40V , I
D
=14.0A
V
DS
=25
V
,
V
GS
=0V, f=1.0MH
Z
2.0
–
4.0
85
–
V
mΩ
S
–
–
–
–
–
–
–
–
–
–
–
–
60
24
C
iss
2879 3742
pF
C
oss
Output capacitance
362 470
81 105
pF
pF
ns
ns
ns
ns
C
rss
Reverse transfer capacitance
Turn-On delay time
t
d
(on)
t
r
V
DD
=100V,I
D
=28A,R
G
=25Ω V
GS
28
69
=10V
（
note 4
，
5
）
Turn-On rise time
251 494
309 617
220 412
t
d
(off)
t
f
Turn-Off delay time
Turn-Off Fall time
Q
g
T
o
tal Gate Charge
V
DS
=160V , I
D
=28A
V
GS
=10V
（
note 4
，
5
）
103 136
nC
Q
gs
Gate-Source charge
16
53
–
–
nC
nC
Q
gd
Gate-Drain charge
Maximum Continuous Drain-Source
Diode Forward Current
IS
–
–
–
–
–
28
112
1.4
A
A
V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Maximum Continuous Drain-Source
Diode Forward Current
VSD
V
GS
=0V, I
S
=28A
trr
218
ns
Reverse recovery time
V
GS
=0V, I
S
=28A dI
F
/dt=100A/μs
(note 4)
Q
rr
1.91
μC
Reverse recovery charge
Notes:
1
：
Pulse width limited by maximum junction temperature
2
：
L=1.5mH, I
AS
=28A, V
DD
=50V, R =25 Ω,Starting T =25
℃
3
：
I
SD
≤28A,di/dt ≤200A/μs, VDD≤BV
DSS
, Starting T =25
℃
G
J
J
4
：
Pulse Test
：
Pulse Width ≤300μs, Duty Cycle≤2
％
5
：
Essentially independent of operating temperature
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AP34N20P
200V N-Channel Enhancement Mode MOSFET
Electrical Characteristics Diagrams
1000
1000
VGS
VGS
TOP
15V
TOP
15V
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
100
10
100
10
1
BOTTOM 4.5V
BOTTO
M
4
.5V
4.5V
4.5V
1
0.1
0.01
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T =
175 C
J
°
T =
25 C
J
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
3.5
1000
30A
=
I
D
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
°
T =
175 C
J
10
1
°
T =
25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=
1
0V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
°
5.0
6.0
7.0
8.0 9.0
10.0
T ,
Junction Temperature (
C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
Vs. Temperature
5000
4000
3000
2000
1000
0
16
12
8
V
C
= 0V,
f = 1 MHZ
= C
+ C
, C
I
D
=
18A
GS
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
SHORTED
iss
gs
gd ds
C
= C
rss
gd
C
= C
+ C
ds gd
oss
Ciss
Coss
Crss
4
0
0
20
40
60
80
100
1
10
100
1000
Q ,
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
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臺灣永源微電子科技有限公司
AP34N20P
200V N-Channel Enhancement Mode MOSFET
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
°
T =
175 C
J
10us
100us
°
T =
25 C
J
10
1
1ms
°
T =
25 C
J
C
°
T =
175 C
Single Pulse
10ms
V
= 0 V
GS
1.4
0.1
1
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
800
600
400
200
0
35
30
25
20
15
10
5
I
D
TOP
7.3A
13A
BOTTOM 18A
0
25
50
75
100
125
150
175
25
50
75
100
125
150
17
°
Starting T
, Junction Temperature (
C)
J
°
, Case Temperatur
e
(
C
)
T
C
Fig 12c.
Maximum Avalanche Energy
Fig 9.
Maximum Drain Current Vs.
Vs. Drain Current
Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
1
SINGLE PULSE
0.02
t
(THERMAL RESPONSE)
0.01
2
Notes:
1. Duty factor D = t
/ t
1
2. Peak T
=
P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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臺灣永源微電子科技有限公司
AP34N20P
200V N-Channel Enhancement Mode MOSFET
AP34N20P R
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臺灣永源微電子科技有限公司
AP34N20P
200V N-Channel Enhancement Mode MOSFET
Attention
1,Any and all APM Microelectronics products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such a
s
l
ife support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your APM Microelectronics representative nearest
you before using any APM Microelectronics products described or contained herein in such applications.
2,APM Microelectronics assumes no responsibility for equipment failures that result from usin
g
p
roducts
at values that exceed, even momentarily, rated values (such as maximum ratings, operatingcondition
ranges, or other parameters) listed in products specifications of any and all APM Microelectronics
products described or contained herein.
3, Specifications of any and all APM Microelectronics products described or contained her
e
i
nstipulate the
performance, characteristics, and functions of the descri
b
e
d products in the independent state, and are
not guarantees of the performance, characteristics, and functions of thedescribed products as mounted
in the customer
’
s products or equipment. To verify symptoms andstates that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
’
s
products or equipment.
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However, any and all semiconductor products fail with some probability. It is possible tha
t
t
hese
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment,
adopt safety measures so that these kinds of accidents or events canno
t
o
ccur. Such measures include
but are not limited to protective circuits and error prevention circuits for safe design, redundant
design,and structural design.
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or contained herein are controlled under any of applicable local export control laws and regulations, such
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7, Information (including circuit diagrams and circuit parameters) herein is for example only; it i
s
n
ot
guaranteed for volume production. APM Microelectronics believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements o
f
i
ntellectual
property rights or other rights of third parties.
8, Any and all information d
e
s
cribed or contained herein are subject to change without notice du
e
t
o
product/technology improvement,etc. When designing equipment, refer to the “DeliverySpecification” for
the APM Microelectronics product that you Intend to use.
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