A-Power-microelectronics-AP50P03NF
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AP50P03NF
30V P-Channel Enhancement Mode MOSFET
Description
The AP50P03NF uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
V
DS
= -30V
I
D
=-50A
R
DS(ON)
< 13mΩ @ V
GS
=-10V
Application
Lithium battery protection
Wireless impact
Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP50P03NF
PDFN5*6-8L
AP50P03NF XXX YYYY
5000
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
-30
Units
V
DS
Drain-Source Voltage
V
V
A
V
GS
Gate-Source Voltage
±25
Continuous Drain Current, V
GS
@ -10V
1
-50
I
D
@T
C
=25
℃
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
-30
-9.6
-7.7
A
A
A
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
EAS
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
-150
125
-50
45
A
mJ
A
I
AS
T
o
tal Power Dissipation
4
W
P
D
@T
C
=25
℃
T
o
tal Power Dissipation
4
Storage
T
e
mperature Range
2.0
-55 to 150
-55 to 150
62
W
P
D
@T
A
=25
℃
T
STG
T
J
℃
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
℃
R
θ
JA
R
θ
JA
R
θ
JC
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
25
2.8
AP50P03NF Rve2.0
臺灣永源微電子科技有限公司
AP50P03NF
30V P-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-12A
Min.
-30
—
Typ.
-33
Max.
—
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS
T
emperature Coefficient
-0.0232
9
—
△
BVDSS/
△
TJ
V/
℃
—
13
RDS(ON)
Static Drain-Source On-Resistance
2
mΩ
V
GS
=-4.5V , I
D
=-8A
—
14
20
VGS(th)
Gate Threshold Voltage
-1.0
-1.7
-2.5
V
V
GS
=V
DS
, I
D
=-250uA
V
GS(th)
T
emperature Coefficient
—
—
4.6
—
—
-1
△
V
GS(th)
mV/
℃
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
V
GS
=±25V , V
DS
=0V
IDSS
Drain-Source Leakage Current
uA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-5
±100
—
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
nA
S
V
DS
=-5V , I
D
=-30A
30
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
9
—
Ω
Q
g
T
o
tal Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
22
—
Qgs
Qgd
Td(on)
T
r
8.7
7.2
8
—
V
DS
=-15V , V
GS
=-4.5V , I
D
=-15A
nC
ns
—
Turn-On Delay Time
Rise Time
—
73.7
61.8
24.4
2215
310
237
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3Ω
I
D
=-15A
Td(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
Ciss
Coss
Crss
IS
Input Capacitance
—
Output Capacitance
—
V
DS
=-15V , V
GS
=0V , f=1MHz
V
G
=V
D
=0V , Force Current
pF
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
-45
-150
-1
A
A
ISM
VSD
trr
—
—
V
V
GS
=0V , I
S
=-1A , T
J
=25
℃
IF=-15A , dI/dt=100A/µs ,
19
—
nS
nC
T
J
=25
℃
Q
rr
9
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-50A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
AP50P03NF Rve2.0
臺灣永源微電子科技有限公司
AP50P03NF
30V P-Channel Enhancement Mode MOSFET
Typical Characteristics
-12A
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
12
8
10
V
DS
=-15V
I
D
=-15A
8
6
4
2
0
T
J
=150
℃
T
J
=25
℃
4
0
0.00
0.25
0.50
0.75
1.00
0
9
18
27
36
45
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-charge Characteristics
1.5
2.0
1.5
1.0
0.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
AP50P03NF Rve2.0
臺灣永源微電子科技有限公司
AP50P03NF
30V P-Channel Enhancement Mode MOSFET
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1
5
9
13
17
21
25
-V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
T
ON
SINGLE
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
AP50P03NF Rve2.0
臺灣永源微電子科技有限公司
AP50P03NF
30V P-Channel Enhancement Mode MOSFET
Package Mechanical Data-DFN5*6-8L-JQ Single
Common
Symbol
mm
Inch
Mim
1.03
0.34
0.824
4.80
4.11
4.80
5.95
5.65
1.60
Max
1.17
0.48
0.0970
5.40
4.31
5.00
6.15
5.85
/
Min
Max
0.0461
0.0189
0.082
0.2126
0.1697
0.1969
0.2421
0.2303
/
A
b
c
0.0406
0.0134
0.0324
0.1890
0.1618
0.1890
0.2343
0.2224
0.0630
D
D1
D2
E
E1
E2
e
1.27 BSC
0.05 BSC
L
0.05
0.38
0.38
3.30
/
0.25
0.50
0.50
3.50
0.18
0.0020
0.0150
0.0150
0.1299
/
0.0098
0.0197
0.0197
0.1378
0.0070
L1
L2
H
I
AP50P03NF Rve2.0
臺灣永源微電子科技有限公司
AP50P03NF
30V P-Channel Enhancement Mode MOSFET
Attention
1,Any and all APM Microelectronics products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such a
s
l
ife support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your APM Microelectronics representative nearest
you before using any APM Microelectronics products described or contained herein in such applications.
2,APM Microelectronics assumes no responsibility for equipment failures that result from usin
g
p
roducts
at values that exceed, even momentarily, rated values (such as maximum ratings, operatingcondition
ranges, or other parameters) listed in products specifications of any and all APM Microelectronics
products described or contained herein.
3, Specifications of any and all APM Microelectronics products described or contained her
e
i
nstipulate the
performance, characteristics, and functions of the descri
b
e
d products in the independent state, and are
not guarantees of the performance, characteristics, and functions of thedescribed products as mounted
in the customer
’
s products or equipment. To verify symptoms andstates that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
’
s
products or equipment.
4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliabilityproducts.
However, any and all semiconductor products fail with some probability. It is possible tha
t
t
hese
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment,
adopt safety measures so that these kinds of accidents or events canno
t
o
ccur. Such measures include
but are not limited to protective circuits and error prevention circuits for safe design, redundant
design,and structural design.
5,In the event that any or all APM Microelectronics products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.
7, Information (including circuit diagrams and circuit parameters) herein is for example only; it i
s
n
ot
guaranteed for volume production. APM Microelectronics believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements o
f
i
ntellectual
property rights or other rights of third parties.
8, Any and all information d
e
s
cribed or contained herein are subject to change without notice du
e
t
o
product/technology improvement,etc. When designing equipment, refer to the “DeliverySpecification” for
the APM Microelectronics product that you Intend to use.
AP50P03NF Rve2.0
臺灣永源微電子科技有限公司
AP50P03NF
30V P-Channel Enhancement Mode MOSFET
Edition
Rve1.0
Rve2.0
Date
Change
2018/4/10
2019/10/10
Initial release
Reduce RDS(on)
Copyright Attribution“APM-Microelectronice”
AP50P03NF Rve2.0
臺灣永源微電子科技有限公司
AP50P03NF
30V P-Channel Enhancement Mode MOSFET
Test Report For 30PCS
（
30pcs
典型測試報告）
RDS-10V
（
mΩ
）
13
12
11
10
9
RDS-10V
8
7
6
1
2
3
4
5
6
7
8
9 10
11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
No
編號
RDS-4.5V
（
mΩ
）
18
17
16
15
14
13
12
11
RDS-4.5V
1
2
3
4
5
6
7
8
9 10
11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
No
編號
AP50P03NF Rve2.0
臺灣永源微電子科技有限公司
AP50P03NF
30V P-Channel Enhancement Mode MOSFET
VDS(V)
40
39
38
37
36
35
34
33
32
31
30
VDS
1
2
3
4
5
6
7
8
9 10
11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
No
編號
VTH
（
V
）
2.5
2.4
2.3
2.2
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
VTH
1
2
3
4
5
6
7
8
9 10
11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
No
編號
AP50P03NF Rve2.0
臺灣永源微電子科技有限公司
