A-Power-microelectronics-AP5N20D-H

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AP5N20D-H

200V N-Channel Enhancement Mode MOSFET

Description

The AP5N20D-H is silicon N-channel Enhanced

VDMOSFE

, is obtained by the self-aligned planar

chnology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS =200

ID =5A

RDS(ON) <600mΩ@ VGS=10V

（

Type

：

530mΩ

）

Hight Vth

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP5N20D-H

TO-252-3L

AP5N20D-H XXX YYYY

2500

Absolute Maximum Ratings

= 25ºC, unless otherwise noted

Symbol

VDSS

Parameter

Drain-Source Voltage (V

= 0V)

Continuous Drain Current

Pulsed Drain Current

Value

200

Unit

IDM

VGSS

Gate-Source Voltage

±20

Single Pulse Avalanche Energy

Avalanche Current

IAR

Repetitive Avalanche Energy

Power Dissipation (T

= 25ºC)

Thermal Resistance, Junction-to-Case

3.2

RthJC

2.7

ºC/W

RthJA

Thermal Resistance, Junction-to-Ambient

-55~+150

TJ,

Operating Junction and Storage

mperature Range

ºC

AP5N20D-H RVE1.1

永源微電子科技有限公司

AP5N20D-H

200V N-Channel Enhancement Mode MOSFET

Electrical Characteristics (TJ=25

℃

, unless otherwise noted)

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

iss

Parameter

Test Conditions

Min. Typ. Max. Unit

Drain-Source Breakdown Voltage

= 0

= 250µA

200

—

221

—

= 200

= 0

, T

= 25ºC

= 160

= 0

, T

= 125ºC

= ±20V

Zero Gate Voltage Drain Current

μA

—

100

±100

4.0

600

—

Gate-Source Leakage

Gate-Source Threshold Voltage

Drain-Source On-Resistance (Note3)

Input Capacitance

—

= V

, I

= 250µA

= 10

= 2.5A

2.5

—

3.1

530

228

1.5

9.5

—

mΩ

—

= 0

= 25

, f =

.0MHz

oss

Output Capacitance

—

rss

Reverse Transfer Capacitance

tal Gate Charge

—

= 160

= 5.0A, V

10V

Gate-Source Charge

—

Gate-Drain Charge

—

td(on)

Turn-on Delay Time

—

Turn-on Rise Time

—

= 100

= 5.0A, R

= 25

Ω

td(off)

Turn-off Delay Time

—

Turn-off Fall Time

—

Continuous Body Diode Current

Pulsed Diode Forward Current

Body Diode Voltage

—

= 25 ºC

ISM

—

1.4

—

= 25ºC, I

= 5A, V

= 0V

—

Reverse Recovery Time

Reverse Recovery Charge

—

160

1.5

μC

= 0

= 5A, di

/dt =100A

/μs

—

Note :

、

The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

、

The EAS data shows Max. rating . IAS = 3A, VDD = 50

G = 25 Ω, Starting TJ = 25 ºC

、

The test condition is Pulse

st: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

、

The power dissipation is limited by 150

℃

junction temperature

、

The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

AP5N20D-H RVE1.1

永源微電子科技有限公司

AP5N20D-H

200V N-Channel Enhancement Mode MOSFET

AP5N20D-H RVE1.1

永源微電子科技有限公司

AP5N20D-H

200V N-Channel Enhancement Mode MOSFET

AP5N20D-H RVE1.1

永源微電子科技有限公司

AP5N20D-H

200V N-Channel Enhancement Mode MOSFET

AP5N20D-H RVE1.1

永源微電子科技有限公司

AP5N20D-H

200V N-Channel Enhancement Mode MOSFET

Package Mechanical Data:TO-252-3L

Dimensions

Ref.

Millimeters

Typ.

Inches

Typ.

Min.

2.10

Max.

Min.

0.083

Max.

0.098

0.004

0.034

0.216

0.024

0.023

0.248

2.50

0.10

0.86

5.48

0.60

0.58

6.30

0.66

5.18

0.40

0.44

5.90

0.026

0.202

0.016

0.017

0.232

5.30REF

0.209REF

6.40

4.63

4.47

9.50

1.09

1.35

6.80

0.252

0.182

0.176

0.374

0.043

0.053

0.268

DETAIL A

4.67

10.70

1.21

0.184

0.421

0.048

0.065

V 2

1.65

7°

0°

6°

0°

6°

DETAIL A

TO-252

Reel Spectification-TO-252

Dimensions

Ref.

Millimeters

Typ.

15.90 16.00

16.10

Inches

Typ.

Min.

Max.

Min.

0.626

0.065

0.291

0.055

0.154

0.311

0.075

0.270

Max.

0.630 0.634

0.069 0.073

0.295 0.299

0.059 0.063

1.65

7.40

1.40

3.90

7.90

1.90

6.85

1.75

7.50

1.50

4.00

8.00

2.00

6.90

1.85

7.60

1.60

4.10

8.10

2.10

7.00

5°

0.157

0.161

0.315 0.319

0.079 0.083

0.271 0.276

Φ329

10.45 10.50 10.60

0.411 0.413 0.417

Φ13

2.68

0.24

2.78

2.88

0.27

0.105

0.009

0.004

0.109 0.113

0.011

0.10

10P0

39.80

40.00 40.20 1.567

1.575 1.583

AP5N20D-H RVE1.1

永源微電子科技有限公司

AP5N20D-H

200V N-Channel Enhancement Mode MOSFET

Attention

1,Any and all APM Microelectronics products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such a

ife support systems,

aircraft’s control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your APM Microelectronics representative nearest

you before using any APM Microelectronics products described or contained herein in such applications.

2,APM Microelectronics assumes no responsibility for equipment failures that result from usin

roducts

at values that exceed, even momentarily, rated values (such as maximum ratings, operatingcondition

ranges, or other parameters) listed in products specifications of any and all APM Microelectronics

products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained her

nstipulate the

performance, characteristics, and functions of the descri

d products in the independent state, and are

not guarantees of the performance, characteristics, and functions of thedescribed products as mounted

in the customer

’

s products or equipment. To verify symptoms andstates that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer

’

products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliabilityproducts.

However, any and all semiconductor products fail with some probability. It is possible tha

hese

probabilistic failures could give rise to accidents or events that could endanger human lives that could

give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment,

adopt safety measures so that these kinds of accidents or events canno

ccur. Such measures include

but are not limited to protective circuits and error prevention circuits for safe design, redundant

design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described

or contained herein are controlled under any of applicable local export control laws and regulations, such

products must not be exported without obtaining the export license from the authorities concerned in

accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system, or

otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it i

guaranteed for volume production. APM Microelectronics believes information herein is accurate and

reliable, but no guarantees are made or implied regarding its use or any infringements o

ntellectual

property rights or other rights of third parties.

8, Any and all information d

cribed or contained herein are subject to change without notice du

product/technology improvement,etc. When designing equipment, refer to the “DeliverySpecification” for

the APM Microelectronics product that you Intend to use.

AP5N20D-H RVE1.1

永源微電子科技有限公司

AP5N20D-H

200V N-Channel Enhancement Mode MOSFET

Edition

Rve1.0

1.1

Date

Change

2020/5/31

2020/3/15

Initial release

Change layout format

AP5N20D-H RVE1.1

永源微電子科技有限公司

A-Power-microelectronics-AP5N20D-H

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