A-Power-microelectronics-AP6G03S
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AP6G03S
30V N+P-Channel Enhancement Mode MOSFET
Description
The AP6G03S uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
V
DS
= 30V
I
D
=10 A
R
DS(ON)
< 25mΩ @ V
GS
=10V
V
DS
= -30V
I
D
=-7.6 A
R
DS(ON)
< -42mΩ @ V
GS
=10V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP6G03S
SOP-8
AP6G03S XXX YYYY
3000
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Rating
Symbol
VDS
Parameter
N-Ch
30
P-Ch
-30
Units
Drain-Source Voltage
V
V
VGS
±
20
±
20
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
10
6
-7.6
-5.9
A
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
IDM
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
20
22
21
2.0
-15
45
A
mJ
A
EAS
IAS
-30
2.0
T
o
tal Power Dissipation
4
W
P
D
@T
C
=25
℃
TSTG
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
-55 to 150
-55 to 150
—
-55 to 150
℃
℃
T
J
-55 to 150
R
θ
JA
R
θ
JC
62
5
℃
/W
℃
/W
—
AP6G03S R
ve
3.8
臺灣永源微電子科技有限公司
AP6G03S
30V N+P-Channel Enhancement Mode MOSFET
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=10A
Min.
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
30
△
BV
DSS
/△
T
J
BVDSS
T
e
mperature Coefficient
—
0.023
23
—
V/
℃
—
25
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
V
GS
=4.5V , I
D
=5A
—
30
38
V
GS(th)
Gate Threshold Voltage
1.0
1.7
2.5
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
—
—
-5.2
—
—
1
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
I
DSS
Drain-Source Leakage Current
uA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
±
100
—
V
DS
=24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
R
g
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
nA
S
V
DS
=5V , I
D
=10A
16
V
DS
=0V , V
GS
=0V , f=1MHz
2.5
7.2
1.4
2.2
4.1
9.8
15.5
6.0
572
81
5
Ω
Q
g
T
o
tal Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
—
Q
gs
Q
gd
T
d(on)
T
r
—
V
DS
=20V , V
GS
=4.5V , I
D
=10A
nC
ns
—
Turn-On Delay Time
Rise Time
—
V
DD
=15V , V
GS
=10V ,
—
R
G
=3.3
,
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
I
D
=5A
—
C
iss
C
oss
C
rss
I
S
Input Capacitance
—
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
65
—
—
10
20
1.2
A
A
V
V
G
=V
D
=0V , Force Current
I
SM
—
V
SD
—
V
GS
=0V , I
S
=1A , T
J
=25
℃
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ coppe
r
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=21A
4 .The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power
dissipation.
AP6G03S R
ve
3.8
臺灣永源微電子科技有限公司
AP6G03S
30V N+P-Channel Enhancement Mode MOSFET
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-7A
Min.
-30
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
△
BV
DSS
/△
T
J
BV
DSS
T
e
mperature Coefficient
-0.021
34
—
V/
℃
—
42
R
DS(ON)
V
GS(th)
Static Drain-Source On-Resistance
2
m
Ω
V
GS
=-4.5V , I
D
=-5A
—
55
49
Gate Threshold Voltage
-1.0
—
-1.6
-2.5
V
V
GS(th)
T
e
mperature Coefficient
V
GS
=V
DS
, I
D
=-250uA
-4.2 —
△
V
GS(th)
mV/
℃
—
—
—
—
—
—
1
5
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
I
DSS
Drain-Source Leakage Current
uA
I
GSS
gfs
R
g
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
15
nA
S
±
100
—
V
DS
=-5V , I
D
=-7A
V
DS
=0V , V
GS
=0V , f=1MHz
15
30
—
Q
g
T
o
tal Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
9.8
2.2
3.4
16.4
20.2
55
Q
gs
Q
gd
T
d(on)
T
r
—
V
DS
=-20V , V
GS
=-4.5V , I
D
=-7A
nC
ns
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-15V
,
V
GS
=-10V
,
R
G
=3.3
,
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
I
D
=-5A
10
—
C
iss
C
oss
C
rss
I
S
Input Capacitance
930
148
115
—
—
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
—
-7.6
-15
-1.2
A
A
V
V
G
=V
D
=0V , Force Current
I
SM
—
V
SD
—
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZcoppe
r
.
2
.
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data sh.The power dissipation is limited by ows Max. rating
4. The test condition is V150
℃
junction temperature
DD
=-25 V,V
GS
=-10V,L=0.1mH,I
AS
=-30A
5 .The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power
dissipation.
AP6G03S R
ve
3.8
臺灣永源微電子科技有限公司
AP6G03S
30V N+P-Channel Enhancement Mode MOSFET
N-Channel Typical Characteristics
12
V
GS
=10V
10
V
GS
=7V
V
GS
=5V
8
V
GS
=4.5V
V
GS
=3V
6
4
2
0
0
0.5
1
1.5
2
V
DS
Drain-to-Source Voltage(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs Gate-Source Voltage
9
6
3
0
T
J
=25
℃
0
0.4
0.8
1.2
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge characteristics
1.8
1 . 8
1 . 4
1 . 0
0 . 6
0 . 2
1.4
1
0.6
0.2
-50
0
50
100
150
– 5 0
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, J
u n c t i o n
T e m
p
℃
e
)
r
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
AP6G03S R
ve
3.8
臺灣永源微電子科技有限公司
AP6G03S
30V N+P-Channel Enhancement Mode MOSFET
1000
100
10
F=1.0MHz
Ciss
Coss
Crss
1
5
9
13
17
21
25
V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DU
T
Y=0.5
0.3
0.1
0.1
0.05
0.02
0.01
PDM
Ton
T
D = Ton/T
Tj peak
= TC + PDM x Rthjc
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
AP6G03S R
ve
3.8
Fig.11 Unclamped Inductive Waveform
臺灣永源微電子科技有限公司
AP6G03S
30V N+P-Channel Enhancement Mode MOSFET
P-Channel Typical Characteristics
12
V
GS
=-10V
V
GS
=-7V
10
8
V
GS
=-5V
V
GS
=-4.5V
6
V
GS
=-3V
4
2
0
0
0.5
1
1.5
2
-V
DS
Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs Gate-Source Voltage
12
10
8
T
J
=150
℃
T
J
=25
℃
6
4
2
0
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
AP6G03S R
ve
3.8
臺灣永源微電子科技有限公司
AP6G03S
30V N+P-Channel Enhancement Mode MOSFET
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1
5
9
13
17
21
25
-V
DS
Drain to Source Voltage(V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
P
DM
T
ON
T
0.01
D = T
ON
/T
S
I
NGLE PULSE
T
J
peak = T
C
+ P
DM
x R
θJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
AP6G03S R
ve
3.8
臺灣永源微電子科技有限公司
AP6G03S
30V N+P-Channel Enhancement Mode MOSFET
Package Mechanical Data-SOP-8/ESOP-8
AP6G03S R
ve
3.8
臺灣永源微電子科技有限公司
AP6G03S
30V N+P-Channel Enhancement Mode MOSFET
Attention
1,Any and all APM Microelectronics products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such a
s
l
ife support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your APM Microelectronics representative nearest
you before using any APM Microelectronics products described or contained herein in such applications.
2,APM Microelectronics assumes no responsibility for equipment failures that result from usin
g
p
roducts
at values that exceed, even momentarily, rated values (such as maximum ratings, operatingcondition
ranges, or other parameters) listed in products specifications of any and all APM Microelectronics
products described or contained herein.
3, Specifications of any and all APM Microelectronics products described or contained her
e
instipulate the
performance, characteristics, and functions of the descri
b
e
d products in the independent state, and are
not guarantees of the performance, characteristics, and functions of thedescribed products as mounted
in the customer
’
s products or equipment. To verify symptoms andstates that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
’
s
products or equipment.
4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliabilityproducts.
However, any and all semiconductor products fail with some probability. It is possible tha
t
t
hese
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment,
adopt safety measures so that these kinds of accidents or events canno
t
o
ccur. Such measures include
but are not limited to protective circuits and error prevention circuits for safe design, redundant
design,and structural design.
5,In the event that any or all APM Microelectronics products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.
7, Information (including circuit diagrams and circuit parameters) herein is for example only; it i
s
n
ot
guaranteed for volume production. APM Microelectronics believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements o
f
i
ntellectual
property rights or other rights of third parties.
8, Any and all information d
e
s
cribed or contained herein are subject to change without notice du
e
t
o
product/technology improvement,etc. When designing equipment, refer to the “DeliverySpecification” for
the APM Microelectronics product that you Intend to use.
AP6G03S R
ve
3.8
臺灣永源微電子科技有限公司
