A-Power-microelectronics-AP80P10T
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AP80P10P
I
T
-100V P-Channel Enhancement Mode MOSFET
Description
The AP80P10P/T uses advanced
APM-SGT V
technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
.
This device is suitable for use as a Battery protection
or in other Switching application.
General Features
V
DS
= -100V
I
D
=-80A
R
DS(ON)
<25mΩ @ V
GS
=10V
(
T
ype
：
19mΩ)
C
iss
≈
4230 PF
Application
Brushless motor
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
AP80P10T
AP80P10P
Pack
Marking
Qty(PCS)
800
TO-263-3L
TO-220-3L
AP80P10T XXX YYYY
AP80P10P XXX YYYY
1000
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
-100
Units
V
V
DS
Drain-Source Voltage
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Gate-Sou
r
ce Voltage
V
±
20
-80
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
A
-56
A
-300
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
174
mJ
A
I
AS
-50
T
o
tal Power Dissipation
4
280
W
P
D
@T
C
=25
℃
T
STG
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
-55 to 150
-55 to 150
62
℃
T
J
℃
R
θ
JA
℃
/W
℃
/W
R
θ
JC
0.65
AP80P10P/T RVE1.0
永源微電子科技有限公司
AP80P10P
I
T
-100V P-Channel Enhancement Mode MOSFET
P-Channel Electrical Characteristics (TJ =25
℃
, unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
V
GS
=0
V
,
I
D
=-250μA
V
DS
=-100
V
,
V
GS
=0
V
,
V
DS
=0
V
,
V
GS
= ±20V
V
DS
=V
GS
, I
D
=-250μA
V
GS
=-10
V
,
I
D
=-20A
V
GS
=-4.5
V
,
I
D
=-10A
-100
–
–
–
V
μA
nA
V
–
-1.0
IGSS
–
–
±100
VGS(th)
-1.0
-1.6
19
-2.5
–
–
–
–
–
–
–
–
–
–
–
–
25
30
–
RDS(on)
Static Drain-Source on-Resistance
mΩ
25
Ciss
Coss
Crss
Q
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
4230
388
26
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
V
DS
=-50
V
,
V
GS
=0
V
,
f=1.0MHz
–
–
80
–
V
DS
=-50
V
,
I
D
=-5A,
V
GS
=-10V
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Turn-on Delay Time
Turn-on Rise Time
15.6
17.2
26
–
–
–
78
–
V
DD
=-50
V
,
I
D
=-5A,
R
G
=6Ω, V
GS
=-10V
td(off)
t
f
Turn-off Delay Time
200
210
–
Turn-off Fall Time
–
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
-80
ISM
VSD
trr
–
–
–
–
–
-280
A
V
Drain to Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
GS
=0
V
,
I
S
=-30A
–
-1.2
208
560
–
–
ns
nC
T
J
=25
℃
,
I
F
=-5A,dI/dt=100A/μs
Q
rr
Note :
1
、
The data tested by surface mounted on a 1 inch 2
FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3
、
The EAS data shows Max. rating . The test condition is VDD =-72
V
,
VGS =-10
V
,
L=0.1mH,IAS =-50A
4
、
The power dissipation is limited by 150
℃
junction temperature
5
、
The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
AP80P10P/T RVE1.0
永源微電子科技有限公司
AP80P10P
I
T
-100V P-Channel Enhancement Mode MOSFET
Package Mechanical Data-TO-220-3L-SLK
Common
mm
Symbol
Mim
4.27
1.15
2.10
0.70
1.17
0.40
8.80
5.70
9.70
–
Nom
4.57
1.30
2.40
0.80
1.27
0.50
9.10
6.70
10.00
8.70
10.00
8.00
0.37
0.10
6.50
13.50
3.10
3.60
2.80
7°
Max
4.87
1.45
2.70
1.00
1.50
0.65
9.40
7.00
10.30
–
A
A1
A2
b
b2
D
D1
D2
E
E1
E2
E3
e
e1
H1
L
L1
Φp
Q
θ1
θ2
F
F1
F2
9.63
7.00
10.35
8.40
6.00
12.75
–
3.45
2.60
4°
6.85
13.90
3.40
3.75
3.00
10°
0°
3°
6°
13.30
15.50
2.80
13.50
15.90
3.00
13.70
16.30
3.20
AP80P10P/T RVE1.0
永源微電子科技有限公司
AP80P10P
I
T
-100V P-Channel Enhancement Mode MOSFET
Package Mechanical Data-TO-263-3L-SLK
Common
mm
Symbol
Mim
4.35
0.09
2.30
0.70
1.25
0.45
1.29
9.10
7.90
9.85
7.90
15.30
–
Nom
4.47
0.10
2.40
0.80
1.36
0.50
1.30
9.20
8.00
10.00
8.00
15.50
2.54
2.54
1.10
1.40
0.25
4°
Max
4.60
0.11
2.70
1.00
1.50
0.65
9.40
9.30
8.10
10.20
8.10
15.70
–
A
A1
A2
b
b2
C
C1
D
D1
E
E1
H
e
L
2.34
1.00
1.30
0.24
0°
2.74
1.20
1.50
0.26
8°
L1
L2
R
θ
Θ1
Θ2
4°
0°
7°
3°
10°
6°
AP80P10P/T RVE1.0
永源微電子科技有限公司
AP80P10P
I
T
-100V P-Channel Enhancement Mode MOSFET
Attention
1,Any and all APM Microelectronics products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such a
s
l
ife support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your APM Microelectronics representative nearest
you before using any APM Microelectronics products described or contained herein in such applications.
2,APM Microelectronics assumes no responsibility for equipment failures that result from usin
g
p
roducts
at values that exceed, even momentarily, rated values (such as maximum ratings, operatingcondition
ranges, or other parameters) listed in products specifications of any and all APM Microelectronics
products described or contained herein.
3, Specifications of any and all APM Microelectronics products described or contained her
e
i
nstipulate the
performance, characteristics, and functions of the descri
b
e
d products in the independent state, and are
not guarantees of the performance, characteristics, and functions of thedescribed products as mounted
in the customer
’
s products or equipment. To verify symptoms andstates that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
’
s
products or equipment.
4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliabilityproducts.
However, any and all semiconductor products fail with some probability. It is possible tha
t
t
hese
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment,
adopt safety measures so that these kinds of accidents or events canno
t
o
ccur. Such measures include
but are not limited to protective circuits and error prevention circuits for safe design, redundant
design,and structural design.
5,In the event that any or all APM Microelectronics products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.
7, Information (including circuit diagrams and circuit parameters) herein is for example only; it i
s
n
ot
guaranteed for volume production. APM Microelectronics believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements o
f
i
ntellectual
property rights or other rights of third parties.
8, Any and all information d
e
s
cribed or contained herein are subject to change without notice du
e
t
o
product/technology improvement,etc. When designing equipment, refer to the “DeliverySpecification” for
the APM Microelectronics product that you Intend to use.
AP80P10P/T RVE1.0
永源微電子科技有限公司
AP80P10P
I
T
-100V P-Channel Enhancement Mode MOSFET
Edition
Date
Change
Rve1.0
2021/4/13
Initial release
Copyright Attribution“APM-Microelectronice”
AP80P10P/T RVE1.0
永源微電子科技有限公司
