A-Power-microelectronics-APG110N10NF
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APG110N10NF
100V N-Channel Enhancement Mode MOSFET
Description
The APG110N10NF uses advanced
APM-SGT
ⅠⅠ
technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
V
DS
= 100V
I
D
=110A
R
DS(ON)
< 6mΩ @ V
GS
=10V (Type
：
4.2mΩ)
Application
DC/DC Converter
LED Backlighting
Power Management Switches
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
APG110N10NF
PDFN5*6-8L
APG110N10NF XXX YYYY
5
000
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
VDS
VGS
ID
Parameter
Value
100
Unit
V
Drain source voltage
Gate source voltage
±20
V
110
A
Continuous drain current, TC=25
℃
Pulsed drain current, TC=25
℃
Power dissipation, TC=25
℃
380
A
IDM
PD
113.6
W
EAS
Single pulsed avalanche energy4)
Operation and storage temperature
205
mJ
-55 to 150
T
s
tg
，
Tj
℃
RθJC
RθJA
Thermal resistance, junction-case
1.1
58
°C/W
°C/W
Thermal resistance, junction-ambient4)
APG110N10NF RVE1.0
永源微電子科技有限公司
APG110N10NF
100V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ.
Max. Unit
VDSS
lGSS
Drain-Source Breakdown Voltage
Gate-body Leakage current
V
GS
= 0
V
,
I
D
= 250µA
V
DS
= 0
V
,
V
GS
= ±20V
100
–
–
V
–
–
–
–
±100
1
nA
IDSS
Zero Gate Voltage Drain Current T
J
=25°C
Zero Gate Voltage Drain Current T
J
=100°C
Gate-Threshold Voltage
V
DS
=100
V
,
V
GS
= 0V
μA
V
IDSS
–
–
100
2.5
VGS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10
V
,
I
D
= 20A
V
GS
= 4.5
V
,
I
D
= 15A
1.2
1.8
–
4.2
6
RDS(on)
Drain-Source on-Resistance
2
mΩ
–
–
–
–
6.6
4400
645
20
9
–
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
V
DS
= 50
V
,
V
GS
=0
V
, f
=1MHz
–
pF
Ω
Reverse Transfer Capacitance
–
V
GS
= 0
V
,
V
DS
= 0
V
,
f
=1MHz
R
g
Gate Resistance
–
1.7
–
Q
g
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
75
17
13
–
–
–
V
GS
= 10
V
,
V
DS
= 50V,
I
D
=20A
Qgs
Qgd
nC
td(on)
Turn-on Delay Time
–
15.4
–
ns
V
GS
=10
V
,
V
DS
=50
V
,
R
G
=
3Ω, I
D
= 20A
t
r
td(off)
t
f
Rise Time
Turn-off Delay Time
Fall Time
–
–
–
13
34
–
–
–
6.2
VSD
IS
Diode Forward Voltage
2
I
F
= 20A, V
GS
= 0V
–
–
–
–
1.2
95
V
A
Continuous Source Current
1,5
V
G
=V
D
=0V , Force Current
trr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
–
–
55
–
–
ns
I
F
= 20A, dI/dt=100A/µs
Q
rr
101
nC
Notes:
1
、
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%
3
、
The EAS data shows Max. rating . The test condition is V
DD
=50
V
,
V
GS
=10
V
,
L
=0.4mH, I
AS
=32A
4
、
The power dissipation is limited by 150°C junction temperature
5
、
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
APG110N10NF RVE1.0
永源微電子科技有限公司
APG110N10NF
100V N-Channel Enhancement Mode MOSFET
Typical Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Forward Characteristics of Reverse
Figure 4. RDS(ON) vs. VGS
Figure 5. R DS(ON) vs. I D
Figure 6. Normalized R DS(on) vs. Temperature
APG110N10NF RVE1.0
永源微電子科技有限公司
APG110N10NF
100V N-Channel Enhancement Mode MOSFET
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
Figure 9. Power Dissipation
Figure10. Safe Operating Area
Figure 11. Normalized Maximum Transient Thermal Impedance
APG110N10NF RVE1.0
永源微電子科技有限公司
APG110N10NF
100V N-Channel Enhancement Mode MOSFET
Package Mechanical Data-DFN5*6-8L-JQ Single
Common
Symbol
mm
Inch
Mim
1.03
0.34
0.824
4.80
4.11
4.80
5.95
5.65
1.60
Max
1.17
0.48
0.0970
5.40
4.31
5.00
6.15
5.85
/
Min
Max
0.0461
0.0189
0.082
0.2126
0.1697
0.1969
0.2421
0.2303
/
A
b
c
0.0406
0.0134
0.0324
0.1890
0.1618
0.1890
0.2343
0.2224
0.0630
D
D1
D2
E
E1
E2
e
1.27 BSC
0.05 BSC
L
0.05
0.38
0.38
3.30
/
0.25
0.50
0.50
3.50
0.18
0.0020
0.0150
0.0150
0.1299
/
0.0098
0.0197
0.0197
0.1378
0.0070
L1
L2
H
I
APG110N10NF RVE1.0
永源微電子科技有限公司
APG110N10NF
100V N-Channel Enhancement Mode MOSFET
Attention
1,Any and all APM Microelectronics products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such a
s
l
ife support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your APM Microelectronics representative nearest
you before using any APM Microelectronics products described or contained herein in such applications.
2,APM Microelectronics assumes no responsibility for equipment failures that result from usin
g
p
roducts
at values that exceed, even momentarily, rated values (such as maximum ratings, operatingcondition
ranges, or other parameters) listed in products specifications of any and all APM Microelectronics
products described or contained herein.
3, Specifications of any and all APM Microelectronics products described or contained her
e
i
nstipulate the
performance, characteristics, and functions of the descri
b
e
d products in the independent state, and are
not guarantees of the performance, characteristics, and functions of thedescribed products as mounted
in the customer
’
s products or equipment. To verify symptoms andstates that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
’
s
products or equipment.
4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliabilityproducts.
However, any and all semiconductor products fail with some probability. It is possible tha
t
t
hese
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment,
adopt safety measures so that these kinds of accidents or events canno
t
o
ccur. Such measures include
but are not limited to protective circuits and error prevention circuits for safe design, redundant
design,and structural design.
5,In the event that any or all APM Microelectronics products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.
7, Information (including circuit diagrams and circuit parameters) herein is for example only; it i
s
n
ot
guaranteed for volume production. APM Microelectronics believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements o
f
i
ntellectual
property rights or other rights of third parties.
8, Any and all information d
e
s
cribed or contained herein are subject to change without notice du
e
t
o
product/technology improvement,etc. When designing equipment, refer to the “DeliverySpecification” for
the APM Microelectronics product that you Intend to use.
APG110N10NF RVE1.0
永源微電子科技有限公司
APG110N10NF
100V N-Channel Enhancement Mode MOSFET
Edition
Date
Change
Rve1.0
2021/8/5
Initial release
Copyright Attribution“APM-Microelectronice”
APG110N10NF RVE1.0
永源微電子科技有限公司
