A-Power-microelectronics-APG60N10NF
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APG60N10NF
100V N-SGT Enhancement Mode MOSFET
General Description
APG60N10NF use advanced SGT
MOSFET technology to
provide low RDS(ON), low gate charge, fast
switching
and excellent avalanche characteristics.
This device is specially designed to get better ruggedness
and suitable to use in
Features
Low RDS(on) & FOM
E
x
tremely low switching loss
E
x
cellent stability and uniformity or Invertors
Applications
Consumer electronic power supply
Motor control
Synchronous-rectification
Isolated DC
Synchronous-rectification applications
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
APG60N10NF
DFN5*6-8
APG60N10NF XXX YYYY
5000
Absolute Maximum Ratings
at T
j
=25℃
unless otherwise noted
Parameter
Symbol
Value
100
±20
60
Unit
V
Drain source voltage
Gate source voltage
V
DS
V
GS
V
Continuous drain current
1)
, T
C
=25 ℃
Pulsed drain current
2)
, T
C
=25 ℃
Power dissipation
3)
T
C
=25 ℃
I
D
A
210
125
A
I
D, pulse
P
D
W
Single pulsed avalanche energy
5)
Operation and storage temperature
Thermal resistance, junction-case
Thermal resistance, junction-ambient
4)
E
AS
T
stg
，
T
j
R
θ
JC
100
mJ
-55 to 150
℃
1
℃/
W
℃/
W
R
θ
JA
62
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臺灣永源微電子科技有限公司
APG60N10NF
100V N-SGT Enhancement Mode MOSFET
AElectrical Characteristics
at T
j
=25 ℃
unless otherwise specified
Parameter
Symbol
Min.
100
1.0
Typ.
Max.
Unit
V
T
e
st condition
V
GS
=0
V
,
I
D
=250 μ
A
V
DS
=V
GS
, I
D
=250 μ
A
V
GS
=10
V
,
I
D
=10 A
V
GS
=4.5
V
,
I
D
=10 A
V
GS
=20 V
Drain-source breakdown voltage
Gate threshold voltage
BV
DSS
V
GS(th)
2.5
10.0
12.0
100
V
Drain-source on-state resistance
Drain-source on-state resistance
R
DS(ON)
R
DS(ON)
8.5
9.5
m
Ω
m
Ω
Gate-source leakage current
I
GSS
nA
-100
V
GS
=-20 V
Drain-source leakage current
Input capacitance
I
DSS
C
iss
C
oss
C
rss
t
d(on)
t
r
1
μ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V
DS
=100
V
,
V
GS
=0 V
2604
361.2
6.5
V
GS
=0
V
,
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
V
DS
=50
V
,
ƒ
=1
MHz
20.6
5
V
GS
=10
V
,
V
DS
=50
V
,
R
G
=2.2
Ω
,
I
D
=25 A
Turn-off delay time
Fall time
t
d(off)
t
f
51.8
9
T
o
tal gate charge
Q
g
49.9
6.5
I
D
=25 A,
V
DS
=50
V
,
V
GS
=10 V
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
V
plateau
I
S
12.4
3.4
Gate plateau voltage
Diode forward current
Pulsed source current
Diode forward voltage
Reverse recove
r
y
t
ime
Reverse recove
r
y c
h
arge
Peak reverse recove
r
y current
70
210
1.3
I
SP
A
V
V
GS
<V
th
V
SD
t
rr
I
S
=12 A, V
GS
=0 V
60.4
106.1
3
ns
nC
A
I
S
=12 A,
di/dt=100
A/
μ
s
Q
rr
I
rrm
Note
1) Calculated
continuous current based on maximum allowable junction temperature.
2) Repetitive
rating; pulse width limited by max. junction temperature.
3) Pd
is based on max. junction temperature, using junction-case thermal resistance.
4) The
value of R
θ
JA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still
air environment with T
a
=25 ℃.
5) V
DD
=50
V
,
R
G
=25
Ω
,
L=0.3 mH, starting T
j
=25 ℃.
APG60N10NF R
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臺灣永源微電子科技有限公司
APG60N10NF
100V N-SGT Enhancement Mode MOSFET
Electrical Characteristics Diagrams
V , Drain-source voltage (V)
DS
Figure 1,
T
y
p. output characteristics
Figure 2,
T
y
p. transfer characteristics
DS
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臺灣永源微電子科技有限公司
APG60N10NF
100V N-SGT Enhancement Mode MOSFET
APG60N10NF R
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臺灣永源微電子科技有限公司
APG60N10NF
100V N-SGT Enhancement Mode MOSFET
T
e
st circuits and waveforms
Figure 1
, Gate
c
h
arge test
c
i
rcuit &
w
a
veform
Figure
2
S
w
itching time
t
e
st circuit
&
w
a
veforms
Figure
3
Unclamped inductive
switching (UIS)
test
c
i
rcuit
&
w
a
veforms
Figure 4, Diode reverse recovery test circuit & waveforms
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臺灣永源微電子科技有限公司
APG60N10NF
100V N-SGT Enhancement Mode MOSFET
Package Mechanical Data-DFN5*6-8L-JQ Single
Common
Symbol
mm
Inch
Mim
1.03
0.34
0.824
4.80
4.11
4.80
5.95
5.65
1.60
Max
1.17
0.48
0.0970
5.40
4.31
5.00
6.15
5.85
/
Min
Max
0.0461
0.0189
0.082
0.2126
0.1697
0.1969
0.2421
0.2303
/
A
b
c
0.0406
0.0134
0.0324
0.1890
0.1618
0.1890
0.2343
0.2224
0.0630
D
D1
D2
E
E1
E2
e
1.27 BSC
0.05 BSC
L
0.05
0.38
0.38
3.30
/
0.25
0.50
0.50
3.50
0.18
0.0020
0.0150
0.0150
0.1299
/
0.0098
0.0197
0.0197
0.1378
0.0070
L1
L2
H
I
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臺灣永源微電子科技有限公司
APG60N10NF
100V N-SGT Enhancement Mode MOSFET
Attention
1,Any and all APM Microelectronics products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such a
s
l
ife support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your APM Microelectronics representative nearest
you before using any APM Microelectronics products described or contained herein in such applications.
2,APM Microelectronics assumes no responsibility for equipment failures that result from usin
g
p
roducts
at values that exceed, even momentarily, rated values (such as maximum ratings, operatingcondition
ranges, or other parameters) listed in products specifications of any and all APM Microelectronics
products described or contained herein.
3, Specifications of any and all APM Microelectronics products described or contained her
e
i
nstipulate the
performance, characteristics, and functions of the descri
b
e
d products in the independent state, and are
not guarantees of the performance, characteristics, and functions of thedescribed products as mounted
in the customer
’
s products or equipment. To verify symptoms andstates that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
’
s
products or equipment.
4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliabilityproducts.
However, any and all semiconductor products fail with some probability. It is possible tha
t
t
hese
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment,
adopt safety measures so that these kinds of accidents or events canno
t
o
ccur. Such measures include
but are not limited to protective circuits and error prevention circuits for safe design, redundant
design,and structural design.
5,In the event that any or all APM Microelectronics products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
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otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.
7, Information (including circuit diagrams and circuit parameters) herein is for example only; it i
s
n
ot
guaranteed for volume production. APM Microelectronics believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements o
f
i
ntellectual
property rights or other rights of third parties.
8, Any and all information d
e
s
cribed or contained herein are subject to change without notice du
e
t
o
product/technology improvement,etc. When designing equipment, refer to the “DeliverySpecification” for
the APM Microelectronics product that you Intend to use.
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