Advanced-Linear-Devices-ALD1101SAL
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A
DVANCED
L
INEAR
D
EVICES,
I
NC.
ALD1101A/ALD1101B
ALD1101
DUAL N-CHANNEL MATCHED MOSFET PAIR
GENERAL DESCRIPTION
APPLICATIONS
The ALD1101 is a monolithic dual N-channel matched transistor pair
intended for a broad range of analog applications.
These enhancement-
mode transistors are manufactured with Advanced Linear Devices’
enhanced ACMOS silicon gate CMOS process.
• Precision
current mirrors
• Precision
current sources
• Analog
switches
• Choppers
• Differential
amplifier input stage
• Voltage
comparator
• Data
converters
• Sample
and Hold
• Analog
inverter
Th
e
A
LD110
1
o
ffer
s
h
ig
h
i
npu
t
i
mpedanc
e
a
n
d
n
egativ
e
c
urren
t
t
empera-
tur
e
c
oefficient. Th
e
t
ransisto
r
p
ai
r
i
s
m
atche
d
f
o
r
m
inimu
m
o
ffse
t
v
oltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +10V systems where low input bias
current, low input capacitance and fast switching speed are desired.
Sinc
e
t
hes
e
a
r
e
M
OSFE
T
d
evices
,
t
he
y
f
eatur
e
v
er
y
l
arg
e
(
almos
t
i
nfinite)
current gain in a low frequency, or near DC, operating environment.
When used with an ALD1102, a dual CMOS analog switch can be
constructed. In
addition, the ALD1101 is intended as a building block for
differential amplifier input stages, transmission gates, and multiplexer
applications.
PIN CONFIGURATION
1
8
SUBSTRATE
SOURCE
GATE
1
1
1
The ALD1101 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature.
For example, DC beta of the
device at a drain current of 5mA at 25
°
C is = 5mA/50pA = 100,000,000.
2
3
7
6
SOURCE
2
DRAIN
GATE
2
4
DRAIN
2
IC
5
TOP VIEW
SAL, PAL PACKAGES
FEATURES
* IC pin is internally connected. Do not connect externally.
• Low
threshold voltage of 0.7V
• Low
input capacitance
• Low
Vos grades — 2mV, 5mV, 10mV
• High
input impedance — 10
12
Ω
typical
• Negative
current (I
) temperature coefficient
DS
• Enhancement-mode
(normally off)
• DC
current gain 10
9
• RoHS
compliant
BLOCK DIAGRAM
GATE 1 (2)
ORDERING INFORMATION
(“L” suffix denotes lead-free (RoHS))
Operating Temperature Range
*
SOURCE 1 (1)
DRAIN 1 (3)
DRAIN 2 (5)
0
°
C to +70
°
C
0
°
C to +70
°
C
SUBSTRATE (8)
8-Pin
8-Pin
SOURCE 2 (7)
SOIC
Package
Plastic Dip
Package
ALD1101ASAL
ALD1101BSAL
ALD1101SAL
ALD1101APAL
ALD1101BPAL
ALD1101PAL
GATE 2 (6)
* Contact factory for high temperature versions.
©2021 Advanced Linear Devices, Inc., Vers. 2.2
1 of 7
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
10V
10V
500mW
DS
Gate-source voltage, V
Power dissipation
GS
Operating temperature range
SAL, PAL packages
Storage temperature range
Lead temperature, 10 seconds
0
°
C to +70
°
C
-65
°
C to +150
°
C
+260
°
C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
T
= 25
°
C unless otherwise specified
A
ALD1101A
ALD1101B
ALD1101
Test
Parameter
Symbol
Min Typ
Max Min Typ
Max
Min Typ
Max
Unit
Conditions
Gate Threshold
Voltage
V
V
0.4
0.7
1.0
2
0.4
0.7
1.0 0.4
5
0.7
1.0
10
V
I
I
= 10
µ
A V
= V
DS
T
DS
DS
GS
Offset Voltage
mV
= 100
µ
A V
= V
GS DS
OS
V
– V
GS1
GS2
Gate Threshold
TC
-1.2
-1.2
-1.2
mV/
°
C
VT
Temperature Drift
On Drain Current
I
25
5
40
10
25
5
40
10
25
5
40
10
mA
V
V
= V
= 5V
DS
DS(ON)
GS
DS
Transconductance
Mismatch
G
mmho
= 5V
I =
10mA
DS
fs
∆
G
0.5
0.5
0.5
%
fs
Output
Conductance
G
200
200
200
µ
mho
V
V
= 5V
I =
10mA
DS
OS
DS
DS
Drain Source
ON Resistance
R
50
75
50
75
50
75
Ω
%
V
= 0.1V
V
= 0.1V
V
= 5V
= 5V
DS(ON)
GS
GS
Drain Source
ON Resistance
Mismatch
∆
R
0.5
0.5
0.5
V
DS(ON)
DS
Drain Source
Breakdown
Voltage
BV
10
10
10
I
= 10
µ
A V
= 0V
= 0V
DSS
DS(OFF)
GSS
DS
GS
Off Drain Current
I
I
0.1
1
4
4
0.1
1
4
4
0.1
1
4
4
nA
µ
A
V
= 10V
V
DS
T =
125
°
C
A
GS
Gate Leakage
Current
100
10
100
10
100
10
pA
nA
V
= 0V
V =
10V
DS GS
= 125
°
C
T
A
Input
C
ISS
6
10
6
10
6
10
pF
Capacitance
ALD1101A/ALD1101B/ALD1101
Advanced Linear Devices
2 of 7
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
160
120
8
4
V
T
= 0V
= +25
°
C
BS
A
V
= 0V
= 25
°
C
V
= 10V
8V
6V
BS
GS
V
= 10V
GS
T
A
4V
2V
8V
6V
80
0
-4
-8
4V
2V
40
0
0
4
6
8
10
2
0
+80
+160
-80
-160
DRAIN SOURCE ON VOLTAGE – V
DS(ON)
(V)
DRAIN SOURCE ON VOLTAGE – V
(mV)
DS(ON)
FORWARD TRANSCONDUCTANCE vs.
DRAIN-SOURCE VOLTAGE
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
5
1 x 10
20
15
V
= 0V
BS
V
= V
DS
GS
f = 1KHz
4
V
= 0V
BS
5 x 10
T
A
= +25
°
C
-2V
I
= 10mA
DS
4
T
A
= +25
°
C
2 x 10
-4V
T
A
= +125
°
C
-6V
4
3
3
1 x 10
10
-8V
5 x 10
5
0
-10V
2 x 10
I
= 1mA
DS
3
1 x 10
0
1.6
2.4
3.2
4.0
0.8
6
4
8
10
2
0
GATE SOURCE ON VOLTAGE – V
GS(ON)
(V)
DRAIN SOURCE ON VOLTAGE – V
DS(ON)
(V)
DRAIN SOURCE ON RESISTANCE vs.
GATE-SOURCE VOLTAGE
DRAIN SOURCE OFF CURRENT vs.
AMBIENT TEMPERATURE
-6
10000
1000
100
10×10
10×10
V
V
= 0.2V
= 0V
DS
BS
V
DS
V
GS
= 10V
= V
= 0V
BS
T
A
= +125
°
C
-9
T
A
= +25
°
C
-12
10
10×10
6
4
8
10
2
-50
-25
0
+25
+50
+75 +100
+125
0
AMBIENT TEMPERATURE – T
(
°
C)
GATE SOURCE ON VOLTAGE – V
(V)
A
GS(ON)
ALD1101A/ALD1101B/ALD1101
Advanced Linear Devices
3 of 7
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
+
V
= +5V
ALD1102,
1/2 ALD1107,
or ALD1117
ALD1102,
1/2 ALD1107,
or ALD1117
+
V
= +5V
+
V
= +5V
Q
Q
4
3
Q
3
Q
4
I
R
SET
SET
I
SOURCE
I
R
SET
SET
I
SOURCE
Digital Logic Control
of Current Source
I
= I
SOURCE
SET
+
Q
Q
ON
1
2
Q
V
– Vt
1
1/2 ALD1101,
1/4 ALD1106,
or 1/2 ALD1116
=
R
SET
4
~
=
ALD1101,
1/2 ALD1106,
or ALD1116
OFF
R
SET
Q ,
Q :
N-Channel MOSFET
Q
Q
: N-Channel MOSFET
Q :
P-Channel MOSFET
1
2
1
3,
Q ,
Q :
P-Channel MOSFET
3
4
4
CURRENT SOURCE MULTIPLICATION
DIFFERENTIAL AMPLIFIER
ALD1102,
1/2 ALD1107,
or ALD1117
+
V
+
V
= +5V
I
= I
x N
SET
SOURCE
PMOS PAIR
NMOS PAIR
I
R
SET
SET
Q
I
SOURCE
Q
3
Q
4
V
V
OUT
Q
Q
Q
3
Q
N
1
2
SET
Q
1
Q
2
–
+
V
IN
IN
ALD1101,
1/2 ALD1106,
or ALD1116
Current
Source
Q
SET,
Q ..Q :
ALD1101, ALD1106, or ALD1116
1 N
Q ,
Q :
N-Channel MOSFET
1
2
Q ,
Q :
P-Channel MOSFET
N-Channel MOSFET
3
4
ALD1101A/ALD1101B/ALD1101
Advanced Linear Devices
4 of 7
TYPICAL APPLICATIONS (cont.)
BASIC CURRENT SOURCES
N-CHANNEL CURRENT SOURCE
P-CHANNEL CURRENT SOURCE
+
V
= +5V
+
V
= +5V
ALD1102,
1/2 ALD1107,
or ALD1117
I
R
SET
SET
I
SOURCE
8
7
3
5
7
6
Q
Q
3
4
8
6
Q
Q
2
1
2
2
3
5
1
I
SOURCE
I
= I
SOURCE
SET
+
ALD1101,
1/2 ALD1106,
or ALD1116
I
R
SET
V
R
– Vt
SET
=
SET
+
V
R
– 1.0
~
=
SET
4
~
=
R
SET
Q ,
Q :
P-Channel MOSFET
Q ,
Q :
N-Channel MOSFET
3
4
1
2
CASCODE CURRENT SOURCES
+
V
= +5V
2 x ALD1102
or ALD1107
+
V
= +5V
I
R
SET
SET
Q
2
Q
1
I
SOURCE
Q
4
Q
3
Q
3
Q
I
4
Q
2
Q
1
I
R
SOURCE
SET
SET
I
2 x ALD1101
or ALD1106
+
R
3
V
– 2Vt
~
SET
=
= I
SET
=
SOURCE
R
SET
Q ,
Q ,
Q ,
Q :
N-Channel MOSFET
1
2
3
4
Q ,
Q ,
Q ,
Q :
P-Channel MOSFET
1 2 3 4
(ALD1101 or ALD1103)
(ALD1102 or ALD1103)
ALD1101A/ALD1101B/ALD1101
Advanced Linear Devices
5 of 7
SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
5.00
4.05
0.053
0.069
1.35
0.004
0.014
0.007
0.185
0.140
0.010
0.018
0.010
0.196
0.160
0.10
0.35
0.18
4.69
3.50
A
1
S (45
°
)
b
C
D-8
E
D
1.27 BSC
0.050 BSC
0.224
e
6.30
0.937
8
°
0.248
0.037
8
°
5.70
0.60
0
°
H
0.024
0
°
L
A
ø
S
A
0.50
0.010
0.020
e
0.25
1
b
S (45
°
)
C
H
L
ø
ALD1101A/ALD1101B/ALD1101
Advanced Linear Devices
6 of 7
PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
Inches
Dim
A
Min
Max
Min
Max
E
E
1
5.08
0.105
0.200
3.81
1.27
2.03
1.65
0.51
0.30
11.68
7.11
8.26
2.79
7.87
3.81
2.03
15
°
0.015
0.050
0.035
0.015
0.008
0.370
0.220
0.300
0.090
0.290
0.110
0.040
0
°
0.050
0.080
0.065
0.020
0.012
0.460
0.280
0.325
0.110
0.310
0.150
0.080
15
°
0.38
1.27
0.89
0.38
0.20
9.40
5.59
7.62
2.29
7.37
2.79
1.02
0
°
A
A
1
2
b
b
1
c
D-8
E
D
S
E
1
A
2
e
A
e
1
L
A
1
L
e
b
S-8
ø
b
1
c
ø
e
1
ALD1101A/ALD1101B/ALD1101
Advanced Linear Devices
7 of 7
