Advanced-Linear-Devices-ALD1102APAL
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A
L
D
DVANCED
INEAR
EVICES,
I
NC.
ALD1102A/ALD1102B
ALD1102
DUAL P-CHANNEL MATCHED MOSFET PAIR
GENERAL DESCRIPTION
APPLICATIONS
The ALD1102 is a monolithic dual P-channel matched transistor pair
intended for a broad range of analog applications.
These enhancement-
mode transistors are manufactured with Advanced Linear Devices’ en-
hanced ACMOS silicon gate CMOS process.
• Precision
current mirrors
• Precision
current sources
• Analog
switches
• Choppers
• Differential
amplifier input stage
• Voltage
comparator
• Data
converters
• Sample
and Hold
• Analog
inverter
Th
e
A
LD110
2
o
ffer
s
h
ig
h
i
npu
t
i
mpedanc
e
a
n
d
n
egativ
e
c
urren
t
t
empera-
ture coefficient.
The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in -2V to -10V systems where low input bias
current, low input capacitance and fast switching speed are desired.
Sinc
e
t
hes
e
a
r
e
M
OSFE
T
d
evices
,
t
he
y
f
eatur
e
v
er
y
l
arg
e
(
almos
t
i
nfinite)
curren
t
g
ai
n
i
n
a
l
o
w
f
requency
,
o
r
n
ea
r
D
C
,
o
peratin
g
e
nvironment. When
used with an ALD1101, a dual CMOS analog switch can be constructed.
In addition, the ALD1102 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
PIN CONFIGURATION
The ALD1102 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature.
For example, DC beta of the
device at a drain current of 5mA at 25
°
C is = 5mA/50pA = 100,000,000.
1
8
SUBSTRATE
SOURCE
GATE
1
1
1
2
3
7
6
SOURCE
2
DRAIN
GATE
2
4
DRAIN
2
IC
5
TOP VIEW
SAL, PAL PACKAGES
FEATURES
* IC pin is internally connected.
Do not connect externally.
• Low
threshold voltage of 0.7V
• Low
input capacitance
• Low
Vos grades — 2mV, 5mV, 10mV
• High
input impedance — 10
12
Ω
typical
• Low
input and output leakage currents
• Negative
current (I
) temperature coefficient
DS
• Enhancement-mode
(normally off)
• DC
current gain 10
9
BLOCK DIAGRAM
• RoHS
compliant
GATE 1 (2)
ORDERING INFORMATION
(“L” suffix denotes lead-free (RoHS))
Operating Temperature Range
*
SOURCE 1 (1)
DRAIN 1 (3)
DRAIN 2 (5)
0
°
C to +70
°
C
0
°
C to +70
°
C
SUBSTRATE (8)
8-Pin
8-Pin
SOURCE 2 (7)
SOIC
Package
Plastic Dip
Package
ALD1102ASAL
ALD1102BSAL
ALD1102SAL
ALD1102APAL
ALD1102BPAL
ALD1102PAL
GATE 2 (6)
* Contact factory for high temperature versions.
©2021 Advanced Linear Devices, Inc., Vers. 2.2
1 of 7
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
-10V
-10V
500mW
DS
Gate-source voltage, V
Power dissipation
GS
Operating temperature range
SAL, PAL packages
Storage temperature range
Lead temperature, 10 seconds
0
°
C to +70
°
C
-65
°
C to +150
°
C
+260
°
C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
T
= 25
°
C unless otherwise specified
A
ALD1102A
ALD1102B
ALD1102
Test
Parameter
Symbol
Min Typ
Max Min Typ
Max
Min Typ
Max
Unit
Conditions
Gate Threshold
Voltage
V
V
-0.4
-0.7
-1.3
-1.2 -0.4
-0.7 -1.2
-0.4 -0.7
-1.2
10
V
I
I
= -10
µ
A V
= V
GS DS
T
DS
DS
Offset Voltage
2
5
mV
= -100
µ
A V
GS
= V
DS
OS
V
– V
GS1
GS2
Gate Threshold
TC
-1.3
-1.3
mV/
°
C
VT
Temperature Drift
On Drain Current
I
-8
2
-16
4
-8
2
-16
4
-8
2
-16
4
mA
V
V
= V
= -5V
DS
DS(ON)
GS
DS
Transconductance
Mismatch
G
mmho
= -5V
I =
-10mA
DS
fs
∆
G
0.5
0.5
0.5
%
fs
Output
Conductance
G
500
500
500
µ
mho
V
V
= -5V
I =
-10mA
DS
OS
DS
DS
Drain Source
ON Resistance
R
180
0.5
270
180 270
180
0.5
270
Ω
%
V
= -0.1V
V =
-5V
GS
DS(ON)
Drain Source
ON Resistance
Mismatch
∆
R
0.5
V
= -0.1V
V =
-5V
GS
DS(ON)
DS
Drain Source
Breakdown
Voltage
BV
-10
-10
-10
I
= -10
µ
A V
= 0V
GS
DSS
DS(OFF)
GSS
DS
Off Drain Current
I
I
0.1
1
4
4
0.1
1
4
4
0.1
1
4
4
nA
µ
A
V
= -10V
V =
0V
GS
DS
T =
125
°
C
A
Gate Leakage
Current
100
10
100
10
100
10
pA
nA
V
= 0V
V
DS
= 125
°
C
= -10V
GS
T
A
Input
C
ISS
6
10
6
10
6
10
pF
Capacitance
ALD1102A/ALD1102B/ALD1102
Advanced Linear Devices
2 of 7
TYPICAL PERFORMANCE CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
OUTPUT CHARACTERISTICS
4
2
-80
-60
V
T
= 0V
V
= -10V
-8V
V
T
= 0V
= +25
°
C
BS
= 25
°
C
GS
BS
A
A
–
6V
V
= -10V
GS
-4V
-2V
-8V
-6V
0
-2
-4
-40
-20
0
-4V
-2V
0
0
0
0
-4
-6
-8
DS(ON)
-10
(V)
-160
+160
DS(ON)
+320
(mV)
-2
-320
DRAIN SOURCE ON VOLTAGE – V
DRAIN SOURCE ON VOLTAGE – V
FORWARD TRANSCONDUCTANCE vs.
DRAIN-SOURCE VOLTAGE
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
10000
5000
2000
1000
500
-20
-15
I =
-5mA
DS
T
= +25
°
C
A
V
= 0V
2V
4V
6V
8V
BS
-10
10V
I
= -1mA
V
DS
T
A
= +125
°
C
-5
0
= 0V
V
= V
DS
BS
GS
= +25
°
C
200
100
f = 1KHz
T
A
0
-1.6
-2.4
-3.2
GS(ON)
-4.0
(V)
-0.8
-6
-4
-8
-10
(V)
-2
GATE SOURCE ON VOLTAGE – V
DRAIN SOURCE ON VOLTAGE – V
DS(ON)
DRAIN SOURCE ON RESISTANCE vs.
GATE-SOURCE VOLTAGE
DRAIN SOURCE OFF CURRENT vs.
AMBIENT TEMPERATURE
-6
10000
1000
100
10×10
10×10
V
V
= 0.4V
= 0V
DS
BS
V
V
= -10V
DS
GS
= V
= 0V
BS
T
= +125
°
C
A
-9
T
= +25
°
C
A
-12
10
10×10
-6
-4
-8
-10
-2
-50
-25
0
+25
+50
+75 +100
+125
AMBIENT TEMPERATURE – T
(
°
C)
GATE SOURCE ON VOLTAGE – V
(V)
A
GS(ON)
ALD1102A/ALD1102B/ALD1102
Advanced Linear Devices
3 of 7
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
+
V
= +5V
ALD1102,
1/2 ALD1107,
or ALD1117
ALD1102,
1/2 ALD1107,
or ALD1117
+
V
= +5V
+
V
= +5V
Q
3
Q
4
Q
3
Q
4
I
R
SET
SET
I
SOURCE
I
R
SET
SET
I
SOURCE
Digital Logic Control
of Current Source
I
= I
SOURCE
SET
+
Q
1
Q
2
ON
Q
V
– Vt
1
1/2 ALD1101,
1/4 ALD1106,
or 1/2 ALD1116
=
R
SET
4
~
=
ALD1101,
1/2 ALD1106,
or ALD1116
OFF
R
SET
Q ,
Q :
N-Channel MOSFET
Q
Q
: N-Channel MOSFET
Q :
P-Channel MOSFET
1
2
1
3,
Q ,
Q :
P-Channel MOSFET
3
4
4
CURRENT SOURCE MULTIPLICATION
DIFFERENTIAL AMPLIFIER
+
V
ALD1102,
+
V =
+5V
1/2 ALD1107,
or ALD1117
I
= I
x N
SET
SOURCE
PMOS PAIR
NMOS PAIR
I
R
SET
SET
Q
I
SOURCE
Q
3
Q
4
V
V
OUT
–
Q
1
Q
Q
3
Q
N
2
SET
Q
Q
1
2
+
V
IN
IN
ALD1101,
1/2 ALD1106,
or ALD1116
Current
Source
Q
Q ..Q :
ALD1101, ALD1106, or ALD1116
1 N
Q ,
Q :
N-Channel MOSFET
SET,
1
2
Q ,
Q :
P-Channel MOSFET
N-Channel MOSFET
3
4
ALD1102A/ALD1102B/ALD1102
Advanced Linear Devices
4 of 7
TYPICAL APPLICATIONS (cont.)
BASIC CURRENT SOURCES
N-CHANNEL CURRENT SOURCE
P-CHANNEL CURRENT SOURCE
+
+
V
= +5V
V
= +5V
ALD1102,
1/2 ALD1107,
or ALD1117
I
R
SET
SET
I
SOURCE
8
7
3
5
7
6
Q
Q
4
8
6
3
Q
Q
2
1
2
2
3
5
1
I
SOURCE
I
= I
SOURCE
SET
+
ALD1101,
1/2 ALD1106,
or ALD1116
I
SET
R
V
R
– Vt
SET
=
SET
+
V
R
– 1.0
~
=
SET
4
~
=
R
SET
Q ,
Q :
N-Channel MOSFET
Q ,
Q :
P-Channel MOSFET
1
2
3
4
CASCODE CURRENT SOURCES
+
V
= +5V
2 x ALD1102
or ALD1107
+
V
= +5V
I
R
SET
SET
Q
2
Q
1
I
SOURCE
Q
4
Q
3
Q
3
Q
I
4
Q
2
Q
1
I
R
SET
SOURCE
SET
2 x ALD1101
or ALD1106
+
3
V
– 2Vt
~
=
I
= I
SET
=
SOURCE
R
SET
R
SET
Q ,
Q ,
Q ,
Q :
N-Channel MOSFET
1
2
3
4
Q ,
Q ,
Q ,
Q :
P-Channel MOSFET
1 2 3 4
(ALD1101 or ALD1103)
(ALD1102 or ALD1103)
ALD1102A/ALD1102B/ALD1102
Advanced Linear Devices
5 of 7
SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
5.00
4.05
0.053
0.069
1.35
0.004
0.014
0.007
0.185
0.140
0.010
0.018
0.010
0.196
0.160
0.10
0.35
0.18
4.69
3.50
A
1
S (45
°
)
b
C
D-8
E
D
1.27 BSC
0.050 BSC
0.224
e
6.30
0.937
8
°
0.248
0.037
8
°
5.70
0.60
0
°
H
0.024
0
°
L
A
ø
S
A
0.50
0.010
0.020
e
0.25
1
b
S (45
°
)
C
H
L
ø
ALD1102A/ALD1102B/ALD1102
Advanced Linear Devices
6 of 7
PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
Inches
Dim
A
Min
Max
Min
Max
E
E
1
5.08
0.105
0.200
3.81
1.27
2.03
1.65
0.51
0.30
11.68
7.11
8.26
2.79
7.87
3.81
2.03
15
°
0.015
0.050
0.035
0.015
0.008
0.370
0.220
0.300
0.090
0.290
0.110
0.040
0
°
0.050
0.080
0.065
0.020
0.012
0.460
0.280
0.325
0.110
0.310
0.150
0.080
15
°
0.38
1.27
0.89
0.38
0.20
9.40
5.59
7.62
2.29
7.37
2.79
1.02
0
°
A
A
1
2
b
b
1
c
D-8
E
D
S
E
1
A
2
e
A
e
1
L
A
1
L
e
b
S-8
ø
b
1
c
ø
e
1
ALD1102A/ALD1102B/ALD1102
Advanced Linear Devices
7 of 7
