Advanced-Linear-Devices-ALD1110EPAL
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TM
A
L
D
DVANCED
INEAR
EVICES,
I
NC.
®
e
EPAD
A
ALD1108E/ALD1110E
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™)
GENERAL DESCRIPTION
BENEFITS
ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically
Programmable Analog Device) N-channel MOSFETs with electrically
adjustable threshold (turn-on) voltage.
The ALD1108E/ALD1110E are
matched and adjusted (e-trimmed) at the factory resulting in quad/dual
MOSFET
s
t
ha
t
a
r
e
h
ighl
y
m
atche
d
i
n
t
hreshol
d
v
oltage
s
a
n
d
o
the
r
e
lectrical
characteristics. For
a given input voltage, the threshold voltage of a
MOSFET device determines its drain on-current, resulting in an on-
resistanc
e
c
haracteristi
c
t
ha
t
c
a
n
b
e
p
recisel
y
p
rese
t
a
n
d
t
he
n
c
ontrolle
d
b
y
the input voltage very accurately.
•
Precision matched electrically after
packaging
•
Simple, elegant single-chip user option
to trim voltage/current values
•
Excellent device matching characteristics
with or without additional electrical trim
•
Remotely and electrically trim parameters
on circuits that are physically inaccessible
PIN CONFIGURATION
Using an ALD1108E/ALD1110E is simple and straight forward. The
MOSFETs function as n-channel MOSFETs, except that all the devices
have exceptional matching to each other in electrical characteristics. Since
these devices are on the same monolithic chip, they also exhibit excellent
tempco matching characteristics.
ALD1110E
EPAD 2
EPAD 1
1
2
3
4
P
G
D
8
7
6
5
P
N2
N1
G
D
N2
N1
Thes
e
M
OSFE
T
d
evice
s
h
av
e
v
er
y
l
o
w
i
npu
t
c
urrents, an
d
a
s
a
r
esul
t
a
v
ery
N1
–
N2
+
12
high input impedance (>10
Ohm). The gate voltage from a control source
+
v
S
, V
12
V
can drive many MOSFET inputs with practically no loading effects. Used in
precision current mirror or current multiplier applications, they can be used
to provide a current source over a 100nA to 3mA range, and with either a
positive, negative or zero tempco.
TOP VIEW
SAL, PAL, DA PACKAGES
ALD1108E
EPAD 1
EPAD 2
ORDERING INFORMATION
(“L” suffix denotes lead-free (RoHS))
1
2
3
4
5
6
7
8
P
G
D
16
15
14
13
12
11
10
9
P
N2
N1
N1
N1
Operating Temperature Range*
G
D
N2
0
°
C to +70
°
C
0
°
C to +70
°
C
-55
°
C to +125
°
C
N2
+
+
v
S
V
12
8-Pin SOIC
Package
8-Pin Plastic Dip
Package
8-Pin CERDIP
Package
–
–
v
V
S
D
34
D
N4
N3
ALD1110ESAL
ALD1110EPAL
ALD1110EDA
G
P
G
N4
N3
N3
16-Pin SOIC
Package
16-Pin Plastic Dip
Package
16-Pin CERDIP
Package
P
N4
EPAD 4
EPAD 3
TOP VIEW
SCL, PCL, DC PACKAGES
ALD1108ESCL
ALD1108EPCL
ALD1108EDC
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
BLOCK DIAGRAM
ALD1110E
ALD1108E
V+(5)
V+(13)
P
(16)
D
(11)
N3
P
(1)
D
(3)
P
(9)
D
(6)
P
(8)
N4
D
N2
(14)
D
N2
(6)
P (8)
N2
P
(1)
D
(3)
N1
N2
N
N1
N3
N4
N4
N1
(2)
~
G
~
G
(2)
N1
(10)
N3
G
(7)
G
(15)
N2
G
N2
(7)
G
N1
EPAD 2
EPAD 3
EPAD 4
EPAD 1
~
EPAD 1
EPAD 2
~
S
12
(4)
V- (5)
S
(12)
34
S
(4)
12
V- (4)
Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415
T
a
sman Drive, Sunnyvale, CA
94089-1706
T
e
l: (408) 747-1155 Fax: (408) 747-1286
Optional EPAD Threshold Voltage Trimming by User
BENEFITS (cont.)
The basic EPAD MOSFET device is a monotonically
adjustable device, which means the device can normally
be e-trimmed to increase in threshold voltage and to
decrease in drain-on current as a function of a given input
bias voltage. Used as an in-circuit element for trimming or
setting a combination of voltage, current and/or on-
resistance characteristics, it can be set up to be e-trimmed
remotely and automatically.
Once e-trimmed, the set
voltage and current levels are stored indefinitely inside the
devic
e
a
s
a
n
onvolatil
e
s
tore
d
c
harge
,
w
hic
h
i
s
n
o
t
a
ffected
during normal operation of the device, even when power is
turned off. A given EPAD device can be adjusted many
times to continually increase its threshold voltage.
A pair
of EPAD devices can also be connected differentially such
that one device is used to adjust a parameter in one
direction and the other device is used to adjust the same
parameter in the other direction.
•
Usable in environmentally sealed circuits
•
No mechanical moving parts — high G-shock
tolerance
•
Improved reliability, dependability, dust and
moisture resistance
•
Cost and labor savings
•
Small footprint for high board density
applications
FEATURES
• Electrically
Programmable Analog Device
• Proven,
non-volatile CMOS technology
• Operates
from 2V, 3V, 5V to 10V
• Flexible
basic circuit building block and design
element
• Very
high resolution — average e-trim voltage
The ALD1108E/ALD1110E can be e-trimmed with an ALD
EPAD programmer to obtain the desired voltage and
current levels.
They can also be e-trimmed as an active in-
system element in a user system, via user designed
resolution of 0.1mV
• Wide
dynamic range — current levels from 0.1
µ
A
to 3000
µ
A
• Voltage
adjustment range from 1.000V to 3.000V
in 0.1mV steps
• Typical
10-year drift of less than 2mV
, P
, etc., are pins required for
interface circuitry. P
N1 N2
optional e-trim of respective MOSFET devices.
If unused,
these pins are to be connected to V- or ground. For more
information, see Application Note AN1108.
• Usable
in voltage mode or current mode
12
• High
input impedance — 10
Ω
9
• Very
high DC current gain — greater than 10
• Device
operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68
µ
A
• Tight
matching and tracking of on-resistance
between different devices with e-trim
• Very
low input currents and leakage currents
• Low
cost, monolithic technology
• Application-specific
or in-system programming modes
• Opptional
user software-controlled automation
• Opptional
e-trim of any standard/custom configuration
• Micropower
operation
APPLICATIONS
• Precision
PC-based electronic calibration
• Automated
voltage trimming or setting
• Remote
voltage or current adjustment of
inaccessible nodes
• PCMCIA
based instrumentation trimming
• Electrically
adjusted resistive load
• Temperature
compensated current sources and
current mirrors
• Electrically
trimmed/calibrated current sources
• Permanent
precision preset voltage level shifter
• Low
temperature coefficient voltage and/or current
bias circuits
• Multiple
preset voltage bias circuits
• Multiple
channel resistor pull-up or pull-down circuits
• Microprocessor
based process control systems
• Portable
data acquisition systems
• Battery
operated terminals and instruments
• Remote
telemetry systems
• Available
in standard PDIP, SOIC and hermetic CDIP
packages
• Suitabl
e
f
o
r
m
atched-pai
r
b
alance
d
c
ircui
t
c
onfiguration
• Suitable
for both coarse and fine trimming, as well as
matched MOSFET array applications
• RoHS
compliant
• E-trimmable
gain amplifiers
• Low
level signal conditioning
• Sensor
and transducer bias currents
• Neural
networks
ALD1108E/ALD1110E
Advanced Linear Devices
2 of 14
ABSOLUTE MAXIMUM RATINGS
+
Supply voltage, V
Supply voltage, V
-0.3V to +10.6V
±
5.3V
referenced to V-
S referenced to V-
Differential input voltage range
Power dissipation
-0.3V to +0.3V
600mW
Operating temperature range
SAL, PAL, SCL, PCL packages
DA, DC packages
Storage temperature range
0
°
C to +70
°
C
-55
°
C to +125
°
C
-65
°
C to +150
°
C
+260
°
C
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
T =
25
°
C V
= +5.0V
unless otherwise specified
A
ALD1108E
ALD1110E
Typ
Test
Parameter
Symbol
Min
Typ
Max
Min
Max
Unit
Conditions
Supply Voltage
1
V
10.0
10.0
V
+
Initial Threshold Voltage
2
E-trim Vt Range
V
t i
0.990
1.000
1.000
1.010
3.000
0.990
1.000
1.000
1.010
3.000
V
V
I
= 1
µ
A T
= 21
°
C
DS
A
V
t
Drain – Gate Connected
Voltage Tempco
TCV
-1.6
-0.3
0.0
-1.6
-0.3
0.0
mV/
°
C
mV/
°
C
mV/
°
C
mV/
°
C
I
= 5
µ
A
DS
D
I
D
I
D
I
D
= 50
µ
A
= 68
µ
A
= 500
µ
A
+2.7
+2.7
Initial Offset Voltage
3
V
1
5
5
2.000
-0.05
1
5
5
2.000
-0.05
mV
OS i
Tempco of V
TCV
µ
V/
°
C
V
= V
DS1 DS2
OS
OS
Differential Threshold Voltage
4
DV
V
t
Tempco of Differential
Threshold Voltage
4
Long Term Drift
TCDV
0.033
-0.02
-5
0.033
-0.02
-5
mV/
°
C
mV
t
∆
V /
∆
t
1000 Hours
1000 Hours
t
Long Term Drift Match
Drain Source On Current
∆
V /
∆
t
µ
V
t
I
3.0
3.0
mA
V =V =
5V V
= 0V
G D
S
DS(ON)
V =
1.0
t
Drain Source On Current
4
I
0.8
0.8
mA
V =V
=
5V V
=
0V
G D
S
DS(ON)
V = 3.0
t
Initial Zero Tempco Voltage
3
Zero Tempco Current
Initial On-Resistance
3
On-Resistance Match
V
1.52
68
1.52
68
V
V =
1.000V
t
ZT
C
i
I
µ
A
Ω
Z
T
C
R
500
0.5
500
0.5
V
¡= 5V
V
DS
= 0.1V
O
N
i
GS
∆
R
ON
%
NOTES:
1. Supply
voltage is limited by Threshold Voltage.
V+ must be the most positive supply rail and V- must be at the most negative supply rail. Source
terminals other than those labeled as V- can be at any voltage between V- and V+.
2. Initial Threshold Voltage is set at the factory.
If no EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage
value.
3. Initial and Final values are the same unless deliberately changed by user.
4. These
parameters apply only when V
of one or more of the devices are to be changed by user.
t
ALD1108E/ALD1110E
Advanced Linear Devices
3 of 14
OPERATING ELECTRICAL CHARACTERISTICS (cont’d)
+
T =
25
°
C V
= +5.0V
unless otherwise specified
A
ALD1108E
ALD1110E
Typ
Test
Parameter
Symbol
Min
Typ
Max
Min
Max
Unit
Conditions
Transconductance
gm
1.4
1.4
mA/V
V
V
= 10V,V
=V +
4.0
G t
D
Transconductance Match
∆
gm
25
6
25
µ
A/V
µ
A/V
µ
A/V
= 10V,V
=V +
4.0
G t
D
Low Level Output
Conductance
g
g
6
V
V
= V
+0.5V
t
OL
G
G
A
High Level Output
Conductance
68
5
68
5
= V
+4.0V
t
OH
Drain Off Leakage Current
Gate Leakage Current
I
400
400
4
pA
nA
D(OFF)
4
T
T
= 125
°
C
= 125
°
C
I
10
100
1
10
100
1
pA
nA
GSS
A
Input Capacitance
Cross Talk
C
ISS
25
60
25
60
pF
dB
f = 100KHz
Relaxation Time Constant
4
Relaxation Voltage
4
t
2
2
Hours
%
RLX
V
-0.3
-0.3
1.0V
≤
V
≤
3.0V
RLX
t
E-TRIM CHARACTERISTICS
+
T =
25
°
C V
= +5.0V
unless otherwise specified
A
ALD1108E
ALD1110E
Typ
Test
Parameter
Symbol
Min
Typ
Max
Min
1.000
Max
Unit
Conditions
E-trim V
Range
4
t
V
t
1.000
3.000
3.000
V
Resolution of V
t
E-trim Pulse Step
4
RV
t
0.1
1
0.1
1
mV
Change in V
Per
t
∆
V /
N
t
0.5
0.5
mV/ pulse
V =
1.0V
t
E-trim Pulse
4
0.05
0.05
V =
2.5V
t
E-trim Pulse Voltage
4
E-trim Pulse Current
4
Pulse Frequency
4
Vp
11.75
12.00
2
12.25
11.75
12.00
2
12.25
V
Ip
mA
KH
Z
ƒ pulse
50
50
ALD1108E/ALD1110E
Advanced Linear Devices
4 of 14
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
20
15
+1.0
T
= +25
°
C
T
= +25
°
C
A
V
= +12V
A
V
V
= +12V
= +10V
GS
GS
GS
V
= +10V
GS
V
= + 8V
= + 6V
GS
0
10
5
V
V
= +6V
GS
GS
V
= +8V
GS
V
V
= + 4V
= + 2V
GS
GS
0
-1.0
0
2
4
6
8
10
12
-200 -160 -120
-80 -40
0
40 80
120 160
+200
DRAIN SOURCE ON VOLTAGE (V)
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE ON CURRENT vs.
AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT vs.
THRESHOLD VOLTAGE
3.0
2.0
6
V
= 5V
T
= +25
°
C
G
A
V
V
= +5V
= +4V
V
= +5.0V
5
4
GS
GS
DS
V =
1.0V
t
3
2
V =
1.5V
t
V
V
= +3V
= +2V
GS
V =
2.0V
t
1.0
0
V =
2.5V
t
1
0
GS
V =
3.0V
t
V
= +1V
GS
-50 -25
0
25
50
75
100
125
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
AMBIENT TEMPERATURE (
°
C)
THRESHOLD VOLTAGE (V)
TRANSCONDUCTANCE vs.
THRESHOLD VOLTAGE
HIGH LEVEL OUTPUT CONDUCTANCE
vs.THRESHOLD VOLTAGE
2.0
75
70
T
= +25
°
C
A
T
= +25
°
C
A
1.5
1.0
5.0
0
60
50
V
GS
V
DS
= V
+ 4.0V
= 10V
V
GS
V
DS
= V
+ 4.0V
t
= 5.0V
t
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOLTAGE (V)
THRESHOLD VOLTAGE (V)
ALD1108E/ALD1110E
Advanced Linear Devices
5 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
LOW LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
12
10
4.0
3.0
2.0
V
= V
I =
1.0
D
µ
A
DS
GS
V
GS
V
DS
= V
+ 0.5V
t
= 5.0V
V =
3.0V
t
V =
2.5V
t
8
6
V =
2.0V
t
V =
1.5V
t
1.0
V =
1.0V
t
4
2
0
-50
25
75
125
-50
-25
0
25
50
75
100
0
50
125
-25
100
AMBIENT TEMPERATURE (
°
C)
AMBIENT TEMPERATURE (
°
C)
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
DRAIN OFF LEAKAGE CURRENT I
vs. AMBIENT TEMPERATURE
DS
600
2.5
2.0
500
400
1.5
1.0
300
200
100
0
I
DS
0.5
0
-50
0
25
50
75
100
125
-25
-50 -25
25
50
75
100
125
0
AMBIENT TEMPERATURE (
°
C)
AMBIENT TEMPERATURE (
°
C)
HIGH LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
LOW LEVEL OUTPUT CONDUCTANCE
vs. THRESHOLD VOLTAGE
100
90
10
T
= +25
°
C
V
GS
V
DS
= V
+ 4.0V
t
= 5.0V
A
80
70
5
60
50
40
V
GS
V
DS
= V
+ 0.5V
t
= 5.0V
0
-50
-25
0
25
50
75
100
125
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
AMBIENT TEMPERATURE (
°
C)
THRESHOLD VOTAGE (V)
ALD1108E/ALD1110E
Advanced Linear Devices
6 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
50
5
4
Zero Temperature
Coefficient (ZTC)
ZTC
125
°
C
ZTC
125
°
C
-55
°
C
-25
°
C
125
°
C
3
2
0
°
C
{
V
t
= 1.2V
{
{
V
V
t
t
= 1.0V
= 1.4V
1
0
– 25
°
C
– 25
°
C
– 25
°
C
70
°
C
125
°
C
0
1.0
1.4
1.8
1.2
2.0
0
1
2
3
4
5
1.6
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON – RESISTANCE
10000
1000
+10
+8
V
V
= R
• I
= +0.9V to +5.0V
DS
GS
ON DS(ON)
REPRESENTATIVE UNITS
+6
+4
+2
V
= 5.0V
DS
100
10
V
D
0
-2
-4
DS
I
V
GS
DS(ON)
1.0
-6
-8
S
V
= 0.5V
DS
0.1
-10
-50
-25
0
25
50
75
100
125
0.1
1.0
10
100
1000
10000
AMBIENT TEMPERATURE (
°
C)
ON – RESISTANCE (K
Ω
)
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
5
4
3
5
4
V
D
DS
V =
1.000V
t
V =
0.5V
DS
= +125
°
C
A
V
= V
T
DS
GS
I
V
DS(ON)
GS
T
= -55
°
C
A
S
3
2
1
V
DS
= 0.5V
T
= 0
°
C
A
T
= +25
°
C
A
V
= 5V
2
1
DS
= +25
°
C
T
= +50
°
C
A
T
A
V
= 5V
DS
= +125
°
C
V
DS
= R
• I
ON DS(ON)
T
T
= +125
°
C
A
A
0
0
1
0.1
10
100
1000
10000
0
1
2
3
4
5
OUTPUT VOLTAGE (V)
DRAIN SOURCE ON CURRENT (
µ
A)
ALD1108E/ALD1110E
Advanced Linear Devices
7 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
4
3
2
600
REPRESENTATIVE UNITS
500
400
1
0
300
200
100
0
-1
-2
-3
-4
I
GSS
-50
-25
0
25
50
75
100
125
-50
0
25
50
75
100
125
-25
AMBIENT TEMPERATURE (
°
C)
AMBIENT TEMPERATURE (
°
C)
DRAIN – GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
GATE SOURCE VOLTAGE
vs. ON – RESISTANCE
5
5.0
D
V
DS
-55
°
C
≤
T
≤
+125
°
C
A
2.5
4.0
3.0
2.0
+125
°
C
I
DS(ON)
V
GS
S
0
-2.5
-5
0.0V
≤
V
≤
5.0V
DS
+25
°
C
1.0
1
10
100
1000
0.1
10
100
1000
1
10000
DRAIN SOURCE ON CURRENT (
µ
A)
ON – RESISTANCE (K
Ω
)
ALD1108E/ALD1110E
Advanced Linear Devices
8 of 14
SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
5.00
4.05
0.053
0.069
1.35
0.004
0.014
0.007
0.185
0.140
0.010
0.018
0.010
0.196
0.160
0.10
0.35
0.18
4.69
3.50
A
1
S (45
°
)
b
C
D-8
E
D
1.27 BSC
0.050 BSC
0.224
e
6.30
0.937
8
°
0.248
0.037
8
°
5.70
0.60
0
°
H
0.024
0
°
L
A
ø
S
A
0.50
0.010
0.020
e
0.25
1
b
S (45
°
)
C
H
L
ø
ALD1108E/ALD1110E
Advanced Linear Devices
9 of 14
PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
Inches
Dim
A
Min
Max
Min
Max
E
E
1
5.08
0.105
0.200
3.81
1.27
2.03
1.65
0.51
0.30
11.68
7.11
8.26
2.79
7.87
3.81
2.03
15
°
0.015
0.050
0.035
0.015
0.008
0.370
0.220
0.300
0.090
0.290
0.110
0.040
0
°
0.050
0.080
0.065
0.020
0.012
0.460
0.280
0.325
0.110
0.310
0.150
0.080
15
°
0.38
1.27
0.89
0.38
0.20
9.40
5.59
7.62
2.29
7.37
2.79
1.02
0
°
A
A
1
2
b
b
1
c
D-8
E
D
S
E
1
A
2
e
A
e
1
L
A
1
L
e
b
S-8
ø
b
1
c
ø
e
1
ALD1108E/ALD1110E
Advanced Linear Devices
10 of 14
CERDIP-8 PACKAGE DRAWING
8 Pin CERDIP Package
E
E
1
Millimeters
Inches
Dim
A
Min
Max
Min
Max
5.08
0.140
0.200
3.55
1.27
0.97
0.36
0.20
—
D
A
1
2.16
1.65
0.58
0.38
10.29
7.87
8.26
0.050
0.038
0.014
0.008
—
0.085
0.065
0.023
0.015
0.405
0.310
0.325
b
b
1
C
A
1
s
D-8
E
A
5.59
7.73
0.220
0.290
E
1
L
1
L
e
0.100 BSC
0.300 BSC
L
2.54 BSC
7.62 BSC
3.81
2
e
1
b
b
1
L
5.08
—
0.150
0.200
—
L
L
3.18
0.38
—
0.125
0.015
—
1
e
1.78
2.49
15
°
0.070
0.098
15
°
2
S
Ø
0
°
0
°
C
ø
e
1
ALD1108E/ALD1110E
Advanced Linear Devices
11 of 14
SOIC-16 PACKAGE DRAWING
16 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
10.00
4.05
0.053
0.069
1.35
S (45
°
)
0.004
0.014
0.007
0.385
0.140
0.010
0.018
0.010
0.394
0.160
0.10
0.35
0.18
9.80
3.50
A
1
b
C
D-16
E
D
1.27 BSC
0.050 BSC
0.224
e
6.30
0.937
8
°
0.248
0.037
8
°
5.70
0.60
0
°
H
0.024
0
°
L
A
ø
0.50
0.010
0.020
0.25
S
A
e
1
b
S (45
°
)
C
H
L
ø
ALD1108E/ALD1110E
Advanced Linear Devices
12 of 14
PDIP-16 PACKAGE DRAWING
16 Pin Plastic DIP Package
E
E
1
Millimeters
Inches
Dim
A
Min
Max
Min
Max
5.08
0.105
0.200
3.81
0.38
1.27
0.89
0.38
0.20
18.93
5.59
7.62
2.29
7.37
2.79
0.38
0
°
1.27
2.03
1.65
0.51
0.30
21.33
7.11
8.26
2.79
7.87
3.81
1.52
15
°
0.015
0.050
0.035
0.015
0.008
0.745
0.220
0.300
0.090
0.290
0.110
0.015
0
°
0.050
0.080
0.065
0.020
0.012
0.840
0.280
0.325
0.110
0.310
0.150
0.060
15
°
A
A
1
2
b
b
1
c
D
D-16
E
S
E
1
A
2
e
A
e
1
L
L
A
1
S-16
ø
e
b
b
1
c
ø
e
1
ALD1108E/ALD1110E
Advanced Linear Devices
13 of 14
CERDIP-16 PACKAGE DRAWING
16 Pin CERDIP Package
Millimeters
Inches
Dim
A
Min
Max
Min
Max
5.08
2.16
1.65
0.58
0.38
21.34
7.87
8.26
0.140
0.200
3.55
E
E
1
0.050
0.038
0.014
0.008
—
0.085
0.065
0.023
0.015
0.840
0.310
0.325
1.27
0.97
0.36
0.20
—
A
1
b
b
1
C
D-16
E
D
0.220
0.290
5.59
7.73
E
1
e
0.100 BSC
0.300 BSC
2.54 BSC
7.62 BSC
A
1
s
e
1
A
5.08
—
0.150
0.200
—
3.81
L
0.125
0.015
—
3.18
0.38
—
L
L
1
2
L
1
L
L
2
1.78
2.49
15
°
0.070
0.098
15
°
b
b
1
S
0
°
0
°
Ø
e
C
ø
e
1
ALD1108E/ALD1110E
Advanced Linear Devices
14 of 14
