Agertech-ATM10N65TF

ATM10N65TF  

N-Channel Enhancement Mode Field Effect Transistor  

Drain-Source Voltage:

 

650V  

Drain Current:

 

10A  

DESCRIPTION  

The ATM10N65TF is a high voltage power MOSFET combines advanced  

trench MOSFET designed to

 

have better characteristics, such

 

as fast  

switching time, low gate charge, low on-state resistance and high rugged  

avalanche characteristics.

 

This power MOSFET is

 

usually used in high  

speed switching applications of switching power supplies and adaptors.  

FEATURES  









R

DS(ON)

< 1.0Ω@V

GS

=10V,I

D

=5A  

Fast switching capability  

Avalanche energy tested  

Improved dv/dt capability,high ruggedness  

ABSOLUTE MAXIMUM RATINGS

(T

C

= 25°C unless otherwise specified)  

PARAMETER  

Drain-Source Voltage  

SYMBOL  

V

DSS  

RATINGS  

650  

UNIT  

V

V

GSS  

Gate-Source Voltage  

Drain Current  

± 30  

10  

V

A

Continuous  

I

D  

I

DM  

E

AS  

Pulsed (Note 2)  

Single Pulsed (Note 3)  

20  

A

421  

mJ  

V/ns  

W

Avalanche Energy  

Peak Diode Recovery dv/dt (Note 4)  

dv/dt  

P

D

 

2.1  

TO-220F  

38  

Power Dissipation  

Junction Temperature  

Operating Temperature  

Storage Temperature  

Junction to Ambient  

Junction to Case  

T

J  

+150  

-55 ~ +150  

-55 ~ +150  

62.5  

°C  

T

OPR  

T

STG  

θ

JA  

°C  

°C  

℃

/W  

℃

/W  

θ

JC  

3.29  

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  

Absolute maximum ratings are stress ratings only and functional device operation is not implied.  

2.

Repetitive Rating: Pulse width limited by maximum junction temperature  

3.

L = 30mH, I

AS

= 5.3A, V

DD

= 50V, R

G

= 25 Ω Starting T

J

= 25°C  

4.

I

SD

≤ 10A, di/dt ≤200A/μs, V

DD

≤BV

DSS

, Starting T

J

= 25°C  

A

G

ERTECH MICROELECTRONICS  

Dated:02/2019  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings Ltd.  

1

/6  

ATM10N65TF  

ELECTRICAL CHARACTERISTICS

( T

C

=25°C, unless otherwise specified)  

PARAMETER  

OFF CHARACTERISTICS  

SYMBOL  

TEST CONDITIONS  

MIN TYP MAX

 

UNIT  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain-Source Leakage Current  

V

GS

=0V, I

D

= 250μA  

650  

V

V

DS

=650V, V

GS

=0V  

V

GS

=30V, V

DS

=0V  

V

GS

=-30V, V

DS

=0V  

1

µA  

Forward  

Reverse  

100 nA  

-100 nA  

Gate-Source Leakage Current  

I

GSS  

ON CHARACTERISTICS  

V

GS(TH)  

R

DS(ON)  

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=10V, I

D

=5A  

2.0  

4.0  

1.0  

V

Static Drain-Source On-Stat

e

R

esistance  

DYNAMIC CHARACTERISTICS  

Input Capacitance  

Ω

C

ISS  

C

OSS  

C

RSS  

1300  

124  

9.3  

pF  

pF  

pF  

Output Capacitance  

V

DS

=25V, V

GS

=0V, f=1.0 MHz  

Reverse Transfer Capacitance  

SWITCHING CHARACTERISTICS  

Turn-On Delay Time  

t

D(ON)  

20  

21  

ns  

ns  

Turn-On Rise Time  

t

R  

t

D(OFF)  

V

DS

=100V,V

GS

=10V, I

D

=10A,  

R

G

=25Ω  

Turn-Off Delay Time  

98  

ns  

(Note1, 2)  

Turn-Off Fall Time  

t

F  

35  

ns  

Total Gate Charge  

Q

G  

Q

GS  

Q

GD  

31  

nC  

nC  

nC  

V

DS

=520V,V

GS

=10V, I

D

=10A,  

I

G

=1mA,(Note1, 2)  

Gate-Source Charge  

7.6  

5.8  

Gate-Drain Charge  

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMU

M

R

ATINGS  

V

SD  

Drain-Source Diode Forward Voltage  

Maximum Continuous Drain-Source Diode  

Forward Current  

V

GS

=0V, I

S

=10A  

1.4  

10  

V

A

I

S  

Maximum Pulsed Drain-Source Diode  

Forward Current  

I

SM  

20  

A

t

rr  

Reverse Recovery Time  

376  

8.5  

ns  

V

GS

=0V, I

S

=10A,  

Q

RR  

dI

F

/dt=100A/µs (Note1)  

Reverse Recovery Charge  

µC  

Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%  

2.Essentially independent of operating temperature  

A

G

ERTECH MICROELECTRONICS  

Dated:02/2019  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings Ltd.  

2

/6  

ATM10N65TF  

TEST CIRCUITS AND WAVEFORMS  

+

D.U.

T.  

V

DS  

–

+

–

I

SD  

L

R

G  

Driver  

V

DD  

* d

v/dt co

ntrolle

d by R

G  

*

I

SD

cont

rolle

d by p

ulse

peri

od  

Same

Type  

as D.U.T.  

V

GS  

* D.U.T.-Device Unde

r Test  

P. W.  

D=  

Period  

V

GS  

(Driver)  

P.W.  

Period  

10

V  

V

GS  

=

I

FM

, Bod

y Dio

de F

orward Curren  

t

I

SD

(D.U.T.)  

di

/dt  

I

RM  

Body Diode Reverse Curren  

Body Diode Recovery dv/dt  

t

V

DS  

(D.U.T.)  

V

DD  

Body Diode  

Forward Voltage Drop  

Peak Diode Recovery dv/dt Waveforms  

A

G

ERTECH MICROELECTRONICS  

Dated:02/2019  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings Ltd.  

3

/6  

ATM10N65TF  

TEST CIRCUITS AND WAVEFORMS (Cont.)  

Switching Test Circuit  

Switching Waveforms  

Gate Charge Test Circuit  

Gate Charge Waveform  

L

V

DS  

BV

DSS  

I

AS  

R

D  

V

DD  

I

D(t)  

V

DS(t)  

V

DD  

10V  

D.U.T.  

t

p  

Time  

t

p  

Unclamped Inductive Switching Waveforms  

Unclamped Inductive Switching Test Circuit  

A

G

ERTECH MICROELECTRONICS  

Dated:02/2019  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings Ltd.  

4

/6  

TYPICAL CHARACTERISTICS CURVES  

A

G

ERTECH MICROELECTRONICS  

Dated:02/2019  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings Ltd.  

5

/6  

A

G

ERTECH MICROELECTRONICS  

Dated:02/2019  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings Ltd.  

6

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