Agertech-ATM2302BNSA

ATM2302BNSA  

N-Channel Enhancement Mode Field Effect Transistor  

Drain-Source Voltage: 20V  

Drain Current: 3A  

Features  



Trench Power LV MOSFET technology  







High power and current handing capability  

R

DS(ON)

< 85mΩ (V

GS

= 4.5V)  

R

DS(ON)

< 115mΩ (V

GS

= 2.5V)  

Application  



PWM application  



Load Switch  

Absolute maximum ratings

(Ta=25

℃

unless otherwise noted)  

Parameter  

Drain-Source Voltage  

Symbol  

V

DS  

V

GS  

I

D  

Value  

20  

Unit  

V

Gate-Source Voltage  

±10  

V

3

A

Continuous Drain Current Ta=25

℃

@Steady State  

Continuous Drain Current Ta=70

℃

@Steady State  

Plused Drain Current

1)  

I

D  

2.4  

A

I

DM  

14  

A

Power Dissipation  

P

D  

0.7  

W

Thermal Resistance from Junction to Ambient

2)  

Junction Temperature  

R

θJA  

T

J  

178  

℃

/W  

℃

℃

150  

Storage Temperature  

T

STG  

-55~ +150  

A

G

ERTECH MICROELECTRONICS  

Dated:03/2018  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings

Ltd.  

1

/4  

ATM2302BNSA  

Electrical characteristic

s

(T

A

=25

o

C, unless otherwise noted)  

Parameter  

Static Characteristics  

Symbol  

Test Condition  

Min.  

Typ. Max.  

Unit  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage current  

Gate threshold voltage  

V

(BR)DSS

V

GS

= 0V, I

D

=250µA  

20  

V

µA  

µA  

V

I

DSS  

I

GSS  

V

DS

=20V,V

GS

= 0V  

V

GS

=±10V, V

DS

= 0V  

V

DS

=V

GS

, I

D

=250µA  

V

GS

=4.5V, I

D

=3.0A  

V

GS

=2.5V, I

D

=2.0A  

V

GS

=0V, I

S

=3.0A  

1

±0.1  

1.1  

85  

V

GS(th)  

0.55  

Drain-source on-resistance

1)  

R

DS(on)  

mΩ  

115  

1.3  

3.0  

Diode Forward Voltage  

Maximum Body-Diode Continuous Current  

Dynamic characteristics  

Input Capacitance  

V

SD  

I

S  

V

A

C

iss  

C

oss  

C

rss  

Q

g  

280  

46  

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

=10V,V

GS  

=0V,f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total gate charge  

29  

2.9  

0.4  

0.6  

V

DS

=10V,V

GS  

=4.5V,I

D

=3.0A  

Gate-source charge  

Q

gs  

Q

gd  

Gate-drain charge  

Switching Characteristics  

Turn-on delay time  

t

d(on)  

t

r  

t

d(off)  

t

f  

13  

54  

18  

11  

ns  

ns  

ns  

ns  

V

DD

=10V, R

L

=5.5Ω,  

I

D

=3.6A  

V

GEN

=4.5V,Rg=6Ω  

Turn-on rise time  

Turn-off delay time  

Turn-off fall time  

Notes:  

1) Pulse

 

Test: Pulse width≤300μs, duty cycle

≤

2%.  

2)

Device mounted on FR-4 PCB,1inch*0.85inch*0.062inch.  

A

G

ERTECH MICROELECTRONICS  

Dated:03/2018  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings

Ltd.  

2

/4  

ATM2302BNSA  

Typical Characteristics Curves  

Figure1. Output

 

Characteristics  

Figure2. Transfer Characteristics  

Figure3. Capacitance

 

Characteristics  

Figure4. Gate Charge  

Figure5. Drain-Source on Resistance  

Figure6. Drain-Source on Resistance  

Figure7. Safe Operation Area  

Figure8. Switching wave  

A

G

ERTECH MICROELECTRONICS  

Dated:03/2018  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings

Ltd.  

3

/4  

ATM2302BNSA  

Package Outline  

SOT-23  

Dimensions In Millimeters  

Symbol  

Min.  

0.90  

0.00  

0.90  

0.30  

0.08  

2.80  

1.20  

2.25  

Max.  

1.15  

0.10  

1.05  

0.50  

0.15  

3.00  

1.40  

2.55  

A

A1  

A2  

b

c

D

E

E1  

e

0.95 REF.  

0.55 REF.  

e1  

L

1.80  

2.00  

L1  

θ

0.30  

0

o  

0.50  

8

o  

Suggested Pad Layout  

A

G

ERTECH MICROELECTRONICS  

Dated:03/2018  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings

Ltd.  

4

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