Agertech-ATM2306NSA
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ATM2306NSA
N-Channel Enhancement Mode Field Effect Transistor
Drain-Source Voltage: 30V
Drain Current: 3.16A
DESCRIPTION
The ATM2306NSA uses advanced trench technology
to provide excellent
R
DS(on)
with low gate charge.
This device is suitable for use as a load switch or
DC/DC converter
.
FEATURES
V
DS(V)
=30V
1Gate 2Source 3Drain
SOT
–
23 Plastic Package
I
D
=3.16A
R
DS(on
)
＜
47mΩ@10V
Drain
R
Gate
Source
MAXIMUM RATINGS
at TA=25
℃
unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source voltage
V
DS
V
GS
I
D
30
±20
V
Gate-Source Voltag
Continuous
rain Current
J
=150
℃
)
(1.2)
3.16
A
Pulsed Drain
rrent
I
DM
20
ontinuo
Source Current(Diode Conduction)
(1.2)
aximum Power Dissipation
(1.2)
I
S
0.62
W
℃
/W
℃
P
D
0.75
Thermal Resistance from Junction to Ambient (t
≤5s
)
Operating Junction and Storage Temperature Range
R
θJA
T
J,
T
stg
100
-55 to150
Notes :
1. Surface Mounted on 1”×1” FR4 board, t
≤5s.
2. Pulse width limited by maximum junction temperature.
Dated:07/2017
Rev: 1.0
AGERTECH MICROELECTRONICS
Subsidiary of Sino-Talent International Holdings Ltd.
1/
6
ATM2306NSA
ELECTRICAL CHARACTERISTICS
Ta =25
℃
unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DS
V
GS
= 0V, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
30
V
Gate-Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
1.0
3.0
±100
0.5
V
DS
=0V, V
GS
=
±20V
nA
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=30V, V
GS
=0V
V
GS
=10V, I
D
=3.5A
V
GS
=4.5V, I
D
=2.8A
V
DS
=4.5V, I
D
=2.5A
I
S
=1.25A,
S
=0V
0.038
0
47
0.052
0
65
7.0
Drain-Source On-Resistance
(1)
R
DS(on)
Ω
Forward Transconductance
(1)
Diode Forward Voltage
Dynamic
g
fs
S
V
V
SD
0.8
1.2
Gate Charge
Q
g
V
DS
=15V
V
GS
=5V,I
D
=2.5A
V
=15V,V
GS
=10V,I
D
=2.5A
3.0
6
4.5
9
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
nC
Q
R
g
1.6
0.6
5
f =1.0MHz
2.5
7.5
Ω
Input Capa
ance
Output Capac
nce
everse T
nsfer Capacitance
witc
ing
C
iss
C
oss
C
rss
305
65
29
V
DS
=15V,V
GS
=0V,f =1MHz
pF
Turn-On Delay Time
Rise Time
t
d(on)
7
12
14
6
11
18
25
10
t
r
V
DD
=
15V, R
L
=15Ω
,
I
D
≈1A,
ns
V
GEN
=10V,Rg=6Ω
Turn-Off Delay Time
t
d(off)
Fall Time
Notes :
t
f
1.Pulse
T
e
st : Pulse Width≤300µs, duty cycle
≤
2%.
Dated:07/2017
Rev: 1.0
AGERTECH MICROELECTRONICS
Subsidiary of Sino-Talent International Holdings Ltd.
2/
6
ATM2306NSA
TYPICAL CHARACTERISTICS CURVES
Transfer Characteristics
Output Characteristics
20
16
12
8
14
12
10
8
V
GS
=7V
V
GS
=6V
VDS=3V
T
a
=100
℃
V
GS
=5V
V
GS
=4V
T
a
=25
℃
6
4
V
GS
=3V
4
2
0
0
0
1
2
3
4
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.
3.2
3.6
4.
.4
4.8
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE
TAGE V
GS
(V)
R
DS(ON)
V
GS
—
R
DS(ON)
I
D
——
80
70
60
50
40
30
20
10
0
400
300
200
100
0
T
a
=25
℃
Pulsed
VGS=4.5V
ID=2.5A
T
a
=100
℃
Pulsed
T
a
=25
℃
Pulsed
0
2
3
4
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
D
N CUR
T I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
Threshold Voltage
I
S
——
V
SD
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
=-250uA
1
T
a
=100
℃
T
a
=25
℃
Pulsed
Pulsed
0.1
0.0
0.4
0.8
1.2
1.6
2.0
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
j
(
℃
)
Dated:07/2017
Rev: 1.0
AGERTECH MICROELECTRONICS
Subsidiary of Sino-Talent International Holdings Ltd.
3/
6
ATM2306NSA
PACKAGE OUTLINE
SOT-23
（
TO-236)
0.8
Dimensions in millimeter
Symbol
Min.
Typ.
Max.
1.150
100
0.900
A
A1
0.000
0.8
b
c
0.300
0.08
00
0.
0.11
2.900
0.500
0.150
3.000
D
E
1.2
2.250
1
00
00
2.400
1.400
2.550
2.000
H
E
1.9
1.900
e
L
0.550REF
SOT-23 (
TO-236
)
0.300
0.500
8
°
θ
0
°
R
ecommended soldering pad
ORDERING INFORMATION
Device
Package
Shipping
ATM
2306N
SA
SOT-23
30
00/Reel&Tape(7inch)
Dated:07/2017
AGERTECH MICROELECTRONICS
Subsidiary of Sino-Talent International Holdings Ltd.
Rev: 1.0
4/
6
ATM2306NSA
CONDITIONS OF SOLDERING
AND STORAGE
Recommended condition of reflow soldering
Recommended peak temperature is over 245
℃
. If peak tem
eratu
i
below 24
℃
, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker
Condition
s
of hand sold
ring
T
e
mperature: 370
℃
Time: 3s
m
x.
Times
one time
orage c
ondition
s
emperature
5 to 40
℃
Humidity
30 to 80% RH
Recommended period
One y
ea
r after manufacturing
Dated:07/2017
Rev: 1.0
AGERTECH MICROELECTRONICS
Subsidiary of Sino-Talent International Holdings Ltd.
5
/
6
ATM2306NSA
PACKAGE
SPECIFICATIONS
The method of packaging
3
,
000 pcs per reel
1
3
SOT
–
23
(
TO
–
236
)
2
30
,
000 pcs per box
10
reels per box
195
220
120
,
000 pcs p
r carto
4 boxes p
carton
210
435
Embossed tape and reel data
G
4
.
0
4
.
0
E
H
F
120
°±
2
°
C
A
1Pin
Tape
(
8mm
)
Symbol
Value
(
unit
:
m
m
)
3
.
15
±
0
.
1
2
.
7
±
0
.
1
1
.
25
±
0
.
1
2
±
0
.
5
A
B
C
E
Reel
(
7
”)
13
±
0
.
5
178
±
2
.
0
8
.
4
±
1
.
5
4
±
0
.
5
60
F
D
G
H
N
T
<
14
.
9
Dated:07/2017
Rev: 1.0
AGERTECH MICROELECTRONICS
Subsidiary of Sino-Talent International Holdings Ltd.
6
/
6
