Agertech-ATM2604KNSG
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ATM2604KNSG
20V N-Channel Enhancement Mode MOSFET
Descriptions
The ATM2604KNSG uses advanced trench technology to
provide excellent RDS(ON) , low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable for
use as a load switch or in PWM applications .
Schematic diag
ram
Features
High power and current handing capability
Lead free product is acquired
Surface mount package
pin Assignment
Applications
PWM application
Load switch
SOT23-6L top view
Absolute Maximum Ratings
(Ta=25
℃
unless otherwise specified)
Parameter
Symbol
V
DS
Maximum
Units
V
20
Drain-Source Voltage
Gate-Source Voltage
V
GS
±
8
V
5
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Power Dissipation
I
D
A
I
DM
30
1.2
A
P
D
W
T
J
,T
STG
Symbol
150, -55 ~ +150
Operating Junction and Storage Temperature Range
Parameter
℃
Typ
64
Max
Unit
Maximum Junction-to-Ambient
(Note 2)
℃
/W
R
θJA
83
Dated:06/2020
Rev: 1.0
A
G
ERTECH MICROELECTRONICS
Subsidiary of Sino-Talent International Holdings Ltd.
1
/5
ATM2604KNSG
Electrical Characteristics
(Ta=25
℃
unless otherwise specified)
Parameter
Static Parameters
Symbo
Test Conditions
Min
Typ
Max
Unit
Drain-Source breakdown voltage
BV
DSS
I
D
=250uA,V
GS
=0V
20
–
–
–
–
1
V
uA
uA
V
Zero Gate voltage drain current
Gate-Body leakage current
Gate Threshold voltage
(Note 3)
On state drain current
I
DSS
V
DS
=16V,V
GS
=0V
–
–
±
10
1
V
DS
=0V,V
GS
=
±
8V
I
GSS
V
GS(th)
0.4
30
0.7
–
V
GS
=V
DS
，
I
D
=250uA
I
D(ON)
VGS=4.5V,VDS=5V
–
A
12
15
31
0.7
25
35
–
V
GS
=4.5V
，
I
D
=5A
m
Ω
m
Ω
S
Static Drain-source on-resistance
(Note 3)
R
DS(on)
V
GS
=2.5V,I
D
=3A
Forward Transconductance
(Note 3)
Diode Forward Voltage
(Note 3)
g
FS
–
–
V
DS
=5V
，
I
D
=5A
V
SD
Is=1A,V
GS
=0V
1.3
V
Maximum Body-Diode Continuous
Current
(Note 2)
–
–
2.5
A
I
S
Dynamic Parameters
Input Capacitance
(Note 4)
Output capacitance
(Note 4)
Reverse transfer capacitance
(Note 4)
Gate resistance
C
iss
C
oss
C
rss
R
g
–
–
–
–
1120
195
155
4.0
–
–
–
–
pF
pF
pF
Ω
V
GS
=0V,V
DS
=10V,f=1MHZ
V
GS
=0V,V
DS
=0V,f=1MHZ
Switching Parameters
Total Gate charge
(Note 4)
Gate Source charge
(Note 4)
Gate Drain charge
(Note 4)
Turn-on delaytime
(Note 4)
Turn-on rise time
(Note 4)
Q
g
Q
gs
Q
gd
t
D(on)
t
r
–
–
–
–
–
–
–
–
–
16
1.7
6.8
7.2
11
64
32
32
12
–
–
–
–
–
–
–
–
–
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
GS
=4.5V,V
DS
=10V,I
D
=5A
V
GS
=5V,V
DD
=10V,
R
L
=1.35
Ω
,R
GEN
=3
Ω
Turn-off delaytime
(Note 4)
Turn-off fall time
(Note 4)
t
D(off)
t
f
Body Diode reverse recovery Time
Body diode reverse recovery charge
t
rr
I
F
=5A,dI/dt=100A/us
I
F
=5A,dI/dt=100A/us
Q
rr
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
Dated:06/2020
Rev: 1.0
A
G
ERTECH MICROELECTRONICS
Subsidiary of Sino-Talent International Holdings Ltd.
2
/5
ATM2604KNSG
Typical Characteristics Curves
Dated:06/2020
Rev: 1.0
A
G
ERTECH MICROELECTRONICS
Subsidiary of Sino-Talent International Holdings Ltd.
3
/5
ATM2604KNSG
Dated:06/2020
Rev: 1.0
A
G
ERTECH MICROELECTRONICS
Subsidiary of Sino-Talent International Holdings Ltd.
4
/5
ATM2604KNSG
Package outline
SOT23-6
Ordering information
Device
ATM2604KNSG
Package
SOT23-6
Marking
2604
Shipping
3000
PCS
/Reel&Tape(7inch)
Dated:06/2020
Rev: 1.0
A
G
ERTECH MICROELECTRONICS
Subsidiary of Sino-Talent International Holdings Ltd.
5
/5
