Agertech-ATM2N65TE
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ATM2N65TE
N-Channel Enhancement Mode Power MOSFET
Drain-Source Voltage: 650V
Continuous Drain Current: 2A
DESCRIPTION
The ATM2N65TE is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power
supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
R
DS(ON)
< 5.0Ω @ V
GS
=
1
0V
Ultra Low gate charge (typical 45nC)
Low reverse transfer capacitance (C
RSS
= typical 9 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°С, unless otherwise
specified)
PARAMETER
Drain-Source Voltage
SYMBOL
V
DSS
RATINGS
650
±30
2.0
UNIT
V
V
GSS
Gate-Source Voltage
V
I
AR
Avalanche Current (Note 2)
A
Continuous
I
D
2.0
A
Drain Current
I
DM
E
AS
E
AR
Pulsed (Note 2)
8.0
A
Single Pulsed (Note 3)
Repetitive (Note 2)
140
4.5
mJ
mJ
V/ns
W
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-252
28
Power Dissipation
P
D
Junction Temperature
Operating Temperature
Storage Temperature
T
J
T
OPR
T
STG
+150
°С
°С
°С
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating : Pulse width limited by T
J
.
3.
L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25Ω, Starting T
J
= 25°C
4.
I
SD
≤2.4A, di/dt≤200A/μs, V
DD
≤ BV
DSS
, Starting T
J
= 25°C
A
G
ERTECH MICROELECTRONICS
Dated:12/2017
Rev: 2.0
Subsidiary of Sino-Talent International Holdings Ltd.
1/6
ATM2N65TE
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwis
e
specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
V
GS
= 0V, I
D
=
250μA
V
DS
= 650V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
650
V
10
μA
Forward
Reverse
100 nA
-100 nA
V/°С
Gate-Source Leakage Current
I
GSS
△
BV
DSS
/
△
T
J
I
D
=250μA, Referenced to
25°C
Breakdown Voltage Temperatur
e
C
oefficient
ON CHARACTERISTICS
Gate Threshold Voltage
0.4
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
=
250μA
2.0
4.0
3.9 5.0
V
Static Drain-Source On-Stat
e
R
esistance
DYNAMIC CHARACTERISTICS
Input Capacitance
V
GS
= 10V, I
D
=1A
Ω
C
ISS
C
OSS
C
RSS
320 370
pF
V
DS
=25V, V
GS
=0V,
f =1MHz
Output Capacitance
40
9
50
12
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
35
40
50
60
ns
ns
Turn-On Rise Time
t
R
V
DD
=325V, I
D
=2.4A,
t
D(OFF)
R
G
=25Ω (Note 1,
2)
Turn-Off Delay Time
130 160
ns
Turn-Off Fall Time
t
F
40
45
4
60
55
ns
nC
nC
nC
Total Gate Charge
Q
G
Q
GS
Q
GD
V
DS
=520V, V
GS
=10V,
I
D
=2.4A (Note 1, 2)
Gate-Source Charge
Gate-Drain Charge
8.4
DRAIN-SOURCE DIOD
E
C
HARACTERISTICS
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
V
SD
I
SD
V
GS
= 0 V, I
SD
= 2.0 A
1.4
2.0
8.0
V
A
I
SM
t
rr
A
180
ns
μC
V
GS
= 0 V, I
SD
= 2.4A,
di/dt =
100 A/μs
(Note1)
Q
RR
Reverse Recovery Charge
0.72
Notes: 1. Pulse Test: Pulse width
≤
300
μ
s, Dut
y
c
ycle
≤
2%
2. Essentially independent of operating temperature
A
G
ERTECH MICROELECTRONICS
Dated:12/2017
Rev: 2.0
Subsidiary of Sino-Talent International Holdings Ltd.
2/6
ATM2N65TE
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
V
DS
–
+
–
L
R
G
Driver
V
DD
* d
v/dt
controlled by R
G
*
I
SD
controlled by pulse period
Same Type
as D.U
.T.
V
GS
* D.U.T.-Device Under Test
Peak Diode Recovery dv/dt Test Circuit
P. W.
V
GS
(Driver)
Perio
D=
P.W.
10
=
V
V
GS
I
FM
,
Body Diode Forward
I
SD
(D.U.T.)
di
/dt
I
RM
Body Diode Reverse Curre
nt
Body Diode Recovery
V
DD
V
DS
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
A
G
ERTECH MICROELECTRONICS
Dated:12/2017
Rev: 2.0
Subsidiary of Sino-Talent International Holdings Ltd.
3/6
ATM2N65TE
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
10%
V
GS
t
D(ON)
t
D(OFF)
t
F
t
R
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DS(t)
V
DD
Time
t
p
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
A
G
ERTECH MICROELECTRONICS
Dated:12/2017
Rev: 2.0
Subsidiary of Sino-Talent International Holdings Ltd.
4/6
ATM2N65TE
TYPICAL CHARACTERISTICS CURVES
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate
Threshold Voltage 300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
150
300
450
600 750
0
0.6
1.2
1.8 2.4 3.0 3.6
Drain-Source Breakdown Voltage, BV
DSS
(V)
Gate Threshold Voltage, V
TH
(V)
A
G
ERTECH MICROELECTRONICS
Dated:12/2017
Rev: 2.0
Subsidiary of Sino-Talent International Holdings Ltd.
5/6
ATM2N65TE
Package Outline
TO-252
Dimensions In Millimeters
Symbol
Min.
6.40
5.20
6.00
6.55
0.45
3.07
0.85
0.75
0.55
2.20
0.43
0.90
0.90
2.20
Max.
6.70
5.40
6.30
6.85
0.60
3.35
1.05
0.95
0.75
2.40
0.58
1.10
1.10
2.40
A
B
C
D
E
F
G
H
I
J
K
L
N
O
A
G
ERTECH MICROELECTRONICS
Dated:12/2017
Rev: 2.0
Subsidiary of Sino-Talent International Holdings Ltd.
6/6
