Agertech-ATM3415KPSA

ATM3415KPSA  

P-Channel Enhancement Mode Power Transistor  

Drain-Source Voltage:

 

-20V  

Continuous Drain Current:

 

-4A  

Features  





Low gate charge  

High density cell design for ultra low R

DS(on)  

ESD protected(HBM) up t

o

2

KV  



Application  







Load switch  

PW

M

a

pplications  

Power management  

Absolute Maximum Ratings  

Ratings at T

A

=25

℃

unless otherwise specified.  

Parameter  

Symbol  

Maximum  

Units  

Drain-Source Voltage  

-V

DS  

20  

V

Gate-Source Voltage  

V

GS  

±8  

V

Continuous Drain Current  

-I

D  

P

D  

4

0.9  

A

W

°C  

Power Dissipation  

Junction and Storage Temperature Range  

T

J

, T

STG  

150, -55 to 150  

Thermal Characteristics  

Parameter  

Symbol  

Typ.  

Units  

Thermal Resistance,Junction-to-Ambient  

R

θJA  

139  

°C/W  

Dated: 07/2021  

Rev:1.1  

AGERTECH M

I

CROELECTRON

I

CS  

Subsidiary of Sino-

T

a

lent International Holdings Ltd.  

1

/4  

ATM3415KPSA  

Electrical Characteristics

(Ta=25

℃

unless otherwise specified

)  

Parameter  

Symbol  

Test Condition  

Min  

Type  

Max  

Units  

Static Characteristics  

–

–

–

–

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage current  

Gate threshold voltage

Note1  

-V

(BR)DSS  

-I

DSS  

V

GS

= 0V, I

D

=-250µA  

V

DS

=-20V,V

GS

= 0V  

V

GS

=±8V, V

DS

= 0V  

V

DS

=V

GS

, I

D

=-250µA  

V

GS

=-4.5V, I

D

=-4A  

V

GS

=-2.5V, I

D

=-4A  

V

DS

=-5V, I

D

=-4A  

V

µA  

µA  

V

20  

–

1

±10  

1

–

I

GSS  

-V

GS(th)  

0.3  

0.65  

33  

–

–

50  

Drain-source on-resistance

Note1  

Forward tranconductance

Note1  

Dynamic characteristics  

Input Capacitance  

R

DS(on)  

g

FS  

mΩ  

S

45  

60  

–

–

8

–

–

–

–

–

–

C

iss  

C

oss  

C

rss  

1181.1  

121.3  

114.8  

V

DS

=-10V,V

GS

=0V,f=1MHz  

Output Capacitance  

pF  

Reverse Transfer Capacitance  

Switching Characteristics  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on delay time  

Turn-on rise time  

12  

10  

V

DS

=-10V,

V

GS

=-4.5V

R

GEN

=3

Ω

,  

R

L

=2.5Ω,  

Turn-off delay time  

Turn-off fall time  

19  

ns  

25  

Q

g  

Q

gs  

Q

gd  

Total gate charge  

10.2  

1.3  

2.4  

V

DS

=-10V,V

GS

=-4.5V,I

D

=-4A  

Gate-source charge  

Gate-drain charge  

nC  

Source-Drain Diode characteristics  

Diode Forward voltage

Note2  

Diode Forward Current

Note1  

–

–

–

–

-V

DS  

-I

S  

V

GS

=0V, I

S

=-1A  

1.2  

4

V

A

Notes:1. Surface Mounted on FR4 Board,t10sec.  

2.Pulse Test : Pulse width

≦

300µs, duty cycle

≦

2%.  

Dated: 07/2021  

Rev:1.1  

AGERTECH M

I

CROELECTRON

I

CS  

Subsidiary of Sino-

T

a

lent International Holdings Ltd.  

2

/4  

ATM3415KPSA  

Typical Characteristic Curves  

Dated: 07/2021  

Rev:1.1  

AGERTECH M

I

CROELECTRON

I

CS  

Subsidiary of Sino-

T

a

lent International Holdings Ltd.  

3

/4  

ATM3415KPSA  

Package Outline  

S

OT-23  

u

nit:mm  

Dimensions in millimeter  

Symbol  

Min.  

Typ.  

1.025  

0.050  

Max.  

1.150  

0.100  

0.900  

A

A1  

0.000  

b

c

0.300  

0.080  

2.800  

0.400  

0.115  

2.900  

0.500  

0.150  

3.000  

D

E

1.200  

2.250  

1.800  

1.300  

2.400  

1.400  

2.550  

2.000  

H

E

1.900  

e

L1  

L

0.550REF  

0.300  

0.500  

o

8

o

0

θ

Dated: 07/2021  

Rev:1.1  

AGERTECH M

I

CROELECTRON

I

CS  

Subsidiary of Sino-

T

a

lent International Holdings Ltd.  

4

/4