Agertech-ATM8205DNSG

ATM8205DNSG  

Dual N-Channel Enhancement Mode Power MOSFET  

Drain-Source Voltage:20V

 

Continuous Drain Current:5A  

Descriptions  

The ATM8205DNSG uses advanced trench technology to provide  

excellent R

DS(ON)

,low gate charge and operation with gate voltages  

as low as 2.5V.This device is suitable for use as a battery protection  

or in other switching application.  

Features  



V

DS

=20V,I

D

=5A  

Typ.R

DS(ON)

= 20m

Ω

@ V

GS

=4.5V  

Typ.R

DS(ON)

= 25m

Ω

@ V

GS

=2.5V  

High power and current handing capability  

Lead free product is acquired  







Surface mount package  

Applications  







Battery protection  

Load switch  

Power management  

Absolute Maximum Ratings

(Ta=25

℃

unless otherwise specified)  

Parameter  

Symbol  

V

DS  

V

GS  

I

D  

Limit  

Units  

V

20  

Drain-Source Voltage  

Gate-Source Voltage  

±

12  

5

V

Drain Current-Continuous  

A

I

DM  

25  

Drain Current-Pulsed  

A

Maximum Power Dissipation  

P

D  

1.25  

W

T

J

,T

STG  

150, -55 ~ +150  

Operating Junction and Storage Temperature Range  

Thermal Resistance

，

Junction-to-Ambient  

℃

R

θJA  

100  

℃

/W  

Dated:04/2021  

Rev: 2.2  

A

G

ERTECH MICROELECTRONICS  

Subsidiary of Sino-Talent International Holdings Ltd.  

1

/5  

ATM8205DNSG  

Electrical Characteristics

(Ta=25

℃

unless otherwise specified)  

Parameter  

Static Parameters  

Symbol  

Test Conditions  

Min  

Typ  

Max  

Unit  

Drain-Source breakdown voltage  

Zero Gate voltage drain current  

Gate-Body leakage current  

Gate Threshold voltage  

BV

DSS  

I

DSS  

I

D

=250uA,V

GS

=0V  

V

DS

=20V,V

GS

=0V  

V

DS

=0V,V

GS

=

±

12V  

V

GS

=V

DS

，

I

D

=250uA  

V

GS

=2.5V

，

I

D

=4A  

V

GS

=4.5V

，

I

D

=5A  

V

DS

=5V

，

I

D

=5A  

20  

–

–

–

1

V

uA  

nA  

V

–

I

GSS  

–

0.5  

–

–

±

100  

1.2  

32  

V

GS(th)  

0.7  

25  

20  

10  

m

Ω  

m

Ω  

s

Static Drain-source on-resistance  

R

DS(on)  

g

FS  

–

25  

Forward Transconductance  

–

–

Dynamic Parameters  

Input Capacitance  

C

iss  

C

oss  

C

rss  

–

–

–

550  

125  

64  

–

–

–

pF  

pF  

pF  

V

GS

=0V,V

DS

=10V,f=1MHZ  

V

GS

=4.5V,V

DS

=10V,I

D

=5A  

Output capacitance  

Reverse transfer capacitance  

Switching Parameters  

Total Gate charge  

Qg  

Qgs  

Qgd  

t

D(on)  

t

r  

–

–

–

–

–

–

–

9.5  

2.1  

1.4  

9

–

–

–

–

–

–

–

nC  

nC  

nC  

ns  

ns  

ns  

ns  

Gate Source charge  

Gate Drain charge  

Turn-on delaytime  

V

GS

=4V,V

DD

=10V,I

D

=5A,  

Turn-on rise time  

10  

32  

24  

R

GEN

=10

Ω  

Turn-off delaytime  

t

D(off)  

Turn-off fall time  

t

f  

Source-Drain diode parameters  

Body diode forward voltage  

V

SD  

I

S  

–

–

0.8  

–

1.2  

5

V

A

I

S

=5A

，

V

GS

=0V  

Body diode continuous source  

current  

Notes:  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature.  

2. Surface

 

Mounted on FR4 Board, t ≤ 10 sec.  

3. Pulse

 

Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  

Dated:04/2021  

Rev: 2.2  

A

G

ERTECH MICROELECTRONICS  

Subsidiary of Sino-Talent International Holdings Ltd.  

2

/5  

ATM8205DNSG  

Typical Characteristics Curves  

Dated:04/2021  

Rev: 2.2  

A

G

ERTECH MICROELECTRONICS  

Subsidiary of Sino-Talent International Holdings Ltd.  

3

/5  

ATM8205DNSG  

Dated:04/2021  

Rev: 2.2  

A

G

ERTECH MICROELECTRONICS  

Subsidiary of Sino-Talent International Holdings Ltd.  

4

/5  

ATM8205DNSG  

Package outline  

SOT-23-6  

Ordering information  

Device  

Package  

SOT-23-6  

Shipping  

3000

PCS

/Reel&Tape(7inch)  

ATM8205DNSG  

Dated:04/2021  

Rev: 2.2  

A

G

ERTECH MICROELECTRONICS  

Subsidiary of Sino-Talent International Holdings Ltd.  

5

/5