Agertech-BCX56SQ-16
| Part # | Agertech-BCX56SQ-16 |
| Download | Agertech-BCX56SQ-16 |
BCX56SQ-10/16
NPN Transistor
Features
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Emitter Base Breakdown Voltage
at I
E
=100
µA
Collector Emitter Saturation Voltage
at I
C
=0.5A,I
B
=50mA
Base Emitter Voltage
at V
CE
=2V, I
C
=0.5A
–
–
–
V(
BR)EBO
V
CE(sat)
V
BE(sat)
5
–
–
V
0.5
1
V
–
V
Transition Frequency
at V
CE
=5V, I
C
=50mA,f=100MHz
F
T
–
–
100
6
–
–
MH
Z
pf
Collector Capacitance at V
CB
=10V,f=1MHz
C
C
A
G
ERTECH MICROELECTRONICS
Dated:12/2019
Rev: 1.0
Subsidiary of Sino-Talent International Holdings
Ltd.
1
/3
BCX56SQ-10/16
Typical Characteristics curves
A
G
ERTECH MICROELECTRONICS
Dated:12/2019
Rev: 1.0
Subsidiary of Sino-Talent International Holdings
Ltd.
2
/3
BCX56SQ-10/16
Package Outline
SOT-89
A
G
ERTECH MICROELECTRONICS
Dated:12/2019
Rev: 1.0
Subsidiary of Sino-Talent International Holdings
Ltd.
3
/3
