Agertech-MMBT2907A

MMBT2907A  

SOT-23  

(TO-236)  

Features  







PNP Silicon Epitaxial Planar Transistor  

For Switching and Amplifier Applications.  

The transistor is subdivided into one group according  

to its DC current gain  

Marking:2F  

1 Base 2.

 

Emitter 3.

 

Collector  

Absolute Maximum Ratings

(T =25

℃

, unless otherwis

e

n

oted)  

A

Parameter  

Collector Base Voltage  

Symbol  

-V

CBO  

-V

CEO  

-V

EBO  

-I

C  

Value  

60  

Unit  

V

60  

V

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

5

V

600  

350  

mA  

mW  

P

tot  

Power Dissipation  

T

J  

Junction Temperature  

Storage Temperature Range  

150  

℃

℃

T

STG  

-55 to 150  

Electrical Characteristics

(

T

A

=25

o

C, unless otherwis

e

n

oted

)  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at -V

CE

=10V, -I

C

=0.1mA  

at -V

CE

=10V, -I

C

=1 mA  

at -V

CE

=10V,-I

C

=10mA  

at -V

CE

=10V, -I

C

=150 mA  

at -V

CE

=10V,-I

C

=500mA  

75  

100  

100  

100  

50  

–

–

–

–

–

–

–

–

H

FE  

300  

–

-I

CBO  

–

10  

nA  

Collector Base Cutoff Current

 

at -V

CB

=50 V  

Collector Base Breakdown Voltage at -Ic=10uA  

Collector Emitter Breakdown Voltage at -Ic=10mA  

Emitter Base Breakdown Voltage

 

at -I

E

=10uA  

-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

60  

60  

5

–

–

–

V

V

V

Collector Emitter Saturation Voltage  

at -I

C

=150 mA, -I

B

= 15 mA  

at -I

C

=500mA ,-I

B

=50mA  

–

–

0.4  

1.6  

-V

CE(sat)  

V

V

Base Saturation Voltage  

at -I

C

= 150mA, -I

B

= 15mA  

at -I

C

= 500mA, -I

B

= 50mA  

-V

BE(sat)  

–

–

1.3  

2.6  

–

F

T  

C

OB  

ton  

td  

MHz  

P

F  

ns  

Transition Frequency at -V

CE

= 20 V, -I

C

= 50mA, f=100MH

Z  

Collector Base Capacitance at -V

CB

=10V,f=1MH

Z  

Turn-on Time at -Vcc=30V,-Ic=150mA,-I

B1

=15mA  

Delay Time at -Vcc=30V,-Ic=150mA,-I

B1

=15mA  

Rise Time at -Vcc=30V,-Ic=150mA,-I

B1

=15mA  

200  

8

45  

10  

40  

100  

80  

30  

–

–

–

–

–

–

–

ns  

ns  

tr  

ns  

toff  

ts  

Turn-off Time at -Vcc=6V,-Ic=150mA,-I

B1

=-I

B2

=15mA  

Storage Time at -Vcc=6V,-Ic=150mA,-I

B1

=-I

B2

=15mA  

Fall Time at -Vcc=6V,-Ic=150mA,-I

B1

=-I

B2

=15mA  

ns  

ns  

tf  

A

G

ERTECH MICROELECTRONICS  

Dated:12/2019  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings

Ltd.  

1

/3  

MMBT2907A  

Typical Characteristics Curves  

A

G

ERTECH MICROELECTRONICS  

Dated:12/2019  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings

Ltd.  

2

/3  

MMBT2907A  

Package Outline  

Dimensions in millimeter  

Symbol  

Min.  

0.900  

0.000  

Typ.  

1.025  

0.050  

Max.  

1.150  

0.100  

A

A1  

b

c

0.300  

0.080  

2.800  

0.400  

0.115  

2.900  

0.500  

0.150  

3.000  

D

E

HE  

e

1.200  

2.250  

1.800  

1.300  

2.400  

1.400  

2.550  

2.000  

1.900  

L1  

L

0.550REF  

0.300  

0°  

0.500  

8°  

θ

Device  

MMBT2907A  

Package  

SOT-23  

Reel Dimension (inch)  

Shipping  

3,000  

7

A

G

ERTECH MICROELECTRONICS  

Dated:12/2019  

Rev: 1.0  

Subsidiary of Sino-Talent International Holdings

Ltd.  

3

/3