Agertech-MMBT8050D-1-5A

MMBT8050C/D(1.5A)  

Features  



For switching and amplifier applications  



Especially suitable for AF-Driver stages and low  

power output stages  

Absolute maximum ratings

(

T

a=25

℃

unless otherwis

e

n

oted)  

Parameter  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

40  

25  

Unit  

V

V

V

A

6

1.5  

350  

150  

Power Dissipation  

Junction

T

emperate  

P

D  

T

J  

mW  

℃

Storage

T

emperature Range  

T

STG  

-55 TO 150  

℃

o

Electrical characteristics

(T =25

 

C, unless otherwisenoted)  

A

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at V

CE

=1V, I

C

=100mA, Current Gain

 

Group  

C

D

100  

160  

–

–

250  

400  

H

FE  

at V

CE

=1V ,I

C

=800mA  

Collector Base Cutoff Current  

at V

CB

=35V  

Emitter Base Cutoff Current  

at V

CB

=6V  

Collector Base Breakdown Voltage  

at I

C

=100

µA  

Collector Emitter Breakdown voltage  

at I

C

=2mA  

40  

–

–

I

CEO  

I

EBO  

100  

nA  

nA  

V

–

–

–

100  

–

V

(BR)CBO  

V

(BR)CEO  

V(

BR)EBO  

V

CE(sat)  

V

BE(sat)  

V

BE(ON)  

F

T  

40  

25  

–

–

–

–

V

Emitter Base Breakdown Voltage  

at I

C

=100

µA  

6

–

V

Collector Emitter Saturation Voltage  

at I

C

=800mA,I

B

=80mA  

Basle Emitter Saturation Voltage  

at I

C

=800mA, I

B

=80mA  

Basle Emitter Voltage  

at V

CE

=1V, I

B

=10mA  

–

–

0.5  

1.2  

1

V

–

V

–

–

–

Transition Frequency  

at V

CE

=10V, I

C

=50mA  

120  

–

MH

Z  

A

G

ERTECH MICROELECTRONICS  

Dated:12/2017  

Rev: 2.0  

Subsidiary of Sino-Talent International Holdings

Ltd.  

1

/4  

MMBT8050C/D(1.5A)  

Typical Characteristics curves  

A

G

ERTECH MICROELECTRONICS  

Dated:12/2017  

Rev: 2.0  

Subsidiary of Sino-Talent International Holdings

Ltd.  

2

/4  

MMBT8050C/D(1.5A)  

Package Outline  

SOT-23  

Symbol  

Dimensions in millimeter  

Min.  

Typ.  

1.025  

0.050  

0.400  

0.115  

2.900  

1.300  

2.400  

1.900  

Max.  

A

A1  

b

c

D

E

HE  

e

0.900  

0.000  

0.300  

0.080  

2.800  

1.200  

2.250  

1.800  

1.150  

0.100  

0.500  

0.150  

3.000  

1.400  

2.500  

2.000  

L1  

L

0.550REF  

0.300  

0.500  

θ

o

0

o

8

Device  

MMBT8050C/D(1.5A)  

Package  

SOT-23  

Reel Dimension(inch)  

7

Shipping  

3,000  

A

G

ERTECH MICROELECTRONICS  

Dated:12/2017  

Rev: 2.0  

Subsidiary of Sino-Talent International Holdings

Ltd.  

3

/4  

MMBT8050C/D(1.5A)  

Package Specifications  

A

G

ERTECH MICROELECTRONICS  

Dated:12/2017  

Rev: 2.0  

Subsidiary of Sino-Talent International Holdings

Ltd.  

4

/4