AGM-Semi-AGM01P15AP
| Part # | AGM-Semi-AGM01P15AP |
Download  | AGM-Semi-AGM01P15AP |
AGM01P15AP
●
General Description
Product Summary
The AGM01P15AP combines advanced trench MOSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
BVDSS
RDSON
ID
This device is ideal
and battery
for load switch
-100V
315mΩ
-10.5A
protection applications.
●
Features
PDFN3.3*3.3 Pin Configuration
■
Advance high cell density Trenc
h
t
echnology
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
■
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
330mm
AGM01P15AP
AGM01P15AP
12mm
PDFN3.3*3.3
5000
Table 1.
Absolute Maximum Ratings (TC=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
V
V
VDS
VGS
-100
±20
Gate-Source Voltage (VDS=0V)
(Note 1)
-10.5
-7.5
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
-42
w
w
33
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
13
(Note 3)
EAS
T ,T
mJ
℃
110
Avalanche energy
Operating Junction and Storage Temperature Range
J
STG
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
—
Unit
Parameter
—
1
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
—
1
R
θJC
3.75
Thermal Resistance Junction-Case
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AGM01P15AP
Table 3.
Symbol
On/Off States
Electrical Characteristics (T
J
=25 unless
otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
=0V I
=-250μA
—
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
GS
D
-100
—
V
DSS
DSS
V
V
=-100V,V =0V
GS
-1
μA
nA
DS
I
=±20V,V =0V
DS
—
±100
GS
I
GSS
V
g
V
=V ,I
=-250μA
Gate Threshold Voltage
DS GS
D
GS(th)
-1.0
-1.9
5
-3.0
—
V
S
V
=5V,I =-3A
D
Forward Transconductance
DS
FS
—
—
—
V
GS
=-10V, I
=-6A
D
mΩ
mΩ
315
297
340
330
R
Drain-Source On-State Resistance
DS(on)
V
GS
=-4.5V, I
=-3A
D
Dynamic Characteristics
—
—
—
—
—
—
1734
86
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=-50V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
40
f=1.0MHz
Rg
Gate resistance
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
12
52
28
38
33
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=-10V,VDS=-50V,
ID=-10A,RGEN=9.1Ω
d(off)
t
f
Q
g
VGS=-10V,
VDS=-50V, ID=-10A
Q
gs
gd
4.2
Q
7.1
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
A
SD
-10.5
Forward on Voltage
VGS=0V,IS=-6A
V
SD
V
-1.2
—
ns
—
—
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Isd=-10A ,
35
46
nc
dI/dt=100A/µs , TJ=25
℃
—
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
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AGM01P15AP
Test Circuit
1) E
AS
Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
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AGM01P15AP
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
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AGM01P15AP
Vds Drain-Source Voltage (V)
T
C
Case
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 Drain Current vs Case Temperature
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8
Safe Operation Area
Figure 10
Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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AGM01P15AP
●Dimensions
（
PDFN
3
.
3
×
3
.
3
）
MILLIMETER
Typ.
b
SYMBOL
D
MIN
MAX
A
A1
A2
D
0.700
0.800
0.900
0.152 REF.
0~0.05
3.100
D1
3.000
2.300
2.900
3.150
1.320
0.200
0.550
0.300
0.180
3.200
2.600
3.100
3.450
1.720
0.400
0.750
0.500
0.480
D1
E
2.450
3.000
E1
E2
b
3.300
1.520
0.300
e
0.650
L
0.400
L1
L2
L3
H
0.330
L3
L2
0~0.100
0~0.100
0.415
e
0.315
0.515
©
ꢀe
ꢁꢂe
ꢁꢃe
©
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AGM01P15AP
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
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