AGM-Semi-AGM025N10C
| Part # | AGM-Semi-AGM025N10C |
Download  | AGM-Semi-AGM025N10C |
AGM025N10C
●
General Description
Product Summary
The AGM025N10C combines advanced trench
MOSFET technology with a low resistance package
to provide
extremely low R
DS(ON)
.
This device is ideal
protection applications.
switch and battery
for load
BVDSS
RDSON
ID
100V
2.7mΩ
180A
●
Features
■
Advance high cell density Trench technology
TO-220 Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
■
■
Low Thermal resistance
100
%
Avalanche tested
100% DVDS tested
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM025N10C
AGM025N10C
TO-220
1000
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
100
±20
Gate-Source Voltage (VDS=0V)
(Note 1)
200
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
126.6
800
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
w
w
250
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
100
(Note 3)
EAS
T ,T
mJ
784
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
62.5
0.50
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
Thermal Resistance Junction-Case
1
VER2.66
AGM025N10C
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TJ=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
100
—
V
DSS
DSS
=100V,V =0V
GS
μA
nA
I
I
=±20V,V =0V
DS
—
±
GSS
100
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
2
3
6
4
V
S
g
FS
=5V,I =30A
—
—
Forward Transconductance
DS
D
—
V
=10V, I
=30A
GS
D
2.7
3.4
mΩ
R
Drain-Source On-State Resistance
DS(on)
Dynamic Characteristics
—
—
—
—
—
—
9200
1130
110
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=50V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
Ω
—
—
—
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
32
40
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=50V,
RGEN=1.6Ω
d(off)
80
t
f
35
Q
g
131
50
VGS=10V, VDS=50V,
ID=92.5A
Q
gs
gd
Q
24.5
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
180
1.2
I
A
SD
Forward on Voltage
VGS=0V,IS=50A
V
SD
—
80
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
IF=50A , dI/dt=500A/µs ,
nc
TJ=25
℃
195
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.66
AGM025N10C
Characteristics Curves
Figure 2. Maximum Power Dissipation vs Case
Figure 1. Safe Operating Area
Temperature
Figure 3. Maximum Continuous Drain Current vs
Case Temperature
Figure 4. Typical Output Characteristics
3
VER2.66
AGM025N10C
Figure 5. Transient Thermal Impedance
Figure 7. Source-Drain Diode Forward
Characteristics
Figure 6. Typical Transfer Characteristics
4
VER2.66
AGM025N10C
Figure 8. Drain-Source On-Resistance vs Drain
Current
Figure 9. Normalized On-Resistance vs Junction
Temperature
Figure 10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
5
VER2.66
AGM025N10C
Figure 13. Typical Gate Charge vs Gate-Source
Voltage
Figure 12. Capacitance Characteristics
6
VER2.66
AGM025N10C
Test Circuit and Waveform
Figure 14. Resistive Switching Test Circuit
Figure 15. Resistive Switching Waveforms
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveforms
7
VER2.66
AGM025N10C
Figure 18. Diode Reverse Recovery Test Circuit
Figure 19. Diode Reverse Recovery Waveform
Figure 20. Unclamped Inductive Switching Test
Circuit
Figure 21. Unclamped Inductive Switching
Waveform
8
VER2.66
AGM025N10C
TO-220 PACKAGE INFORMATION
A
E
A1
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
A1
A2
b
4.370
1.250
2.150
0.700
1.170
0.450
15.100
8.800
5.500
9.700
7.000
4.570
4.700
1.400
2.550
0.950
1.470
0.600
16.100
9.400
1.300
©ꢀ
2.350
0.800
1.270
b1
c
©ꢂ
0.500
E3
D
15.600
9.100
A2
D1
D2
E
6.300 REF
10.000
7.600 REF
2.540 BSC
5.080 BSC
13.500
3.100
b1
b
10.300
E3
e
e1
L
13.200
13.800
3.400
6.750
3.800
3.000
e
c
L1
H
e1
6.250
3.400
2.600
6.500
(Bottom View)
(Top View)
¶
Q
3.600
2.800
ꢃe7<3
ꢃe7<3
ꢂe7<3
©ꢀ
©ꢁ
©ꢂ
9
VER2.66
AGM025N10C
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of
such information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the fourth version issued on August 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
10
VER2.66
