AGM-Semi-AGM025N13LL
| Part # | AGM-Semi-AGM025N13LL |
Download  | AGM-Semi-AGM025N13LL |
AGM025N13LL
L
●
General Description
Product Summary
The AGM025N13LL combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
for load switch and battery
protection applications.
135V
2.9mΩ
305A
●
Features
■
Advance high cell density Trench technology
TOLL-8L Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
D
■
Low Thermal resistance
●
Application
G
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
S
POL application
Pin
1
Description
Gate(G)
BLDC Motor driver
2,3,4,5,6,7,8 Source(S)
Package Marking and Ordering Information
9
Drain(D)
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM025N13LL
AGM025N13LL
TOLL-8L
2000
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
V
V
VDS
VGS
135
±20
305
215
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
600
357
143
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
mJ
EAS
T ,T
Avalanche energy
1500
Operating Junction and Storage Temperature Range
℃
J
STG
-55 To 175
Table 2.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
61
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
0.35
Thermal Resistance Junction-Case
1
VER2.5
AG
M025N13LL
L
Table 3.
Symbol
On/Off States
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
=0V I
=250μA
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
GS
D
135
—
V
DSS
V
V
=135V,V =0V
GS
μA
nA
DS
I
I
DSS
=±20V,V =0V
DS
—
—
GS
±
GSS
100
—
V
Gate Threshold Voltage
V
=V ,I
=250μA
DS GS
D
GS(th)
FS
2.0
—
4.0
—
V
S
g
V
=5V,I =25A
—
Forward Transconductance
DS
D
V
V
=10V, I
=50A
D
2.9
3.5
3.5
4.5
GS
—
—
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=25A
D
GS
Dynamic Characteristics
—
—
—
—
—
—
8362
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=70V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
860
Reverse Transfer Capacitance
14.6
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
Ω
—
—
—
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
1.0
33
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=70V
d(off)
95
ID=50A,RGEN=4.5Ω
t
f
75
Q
g
1387
34
VGS=10V, VDS=70V,
ID=50A
Q
gs
gd
Q
32
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
305
1.3
I
A
SD
Forward on Voltage
VGS=0V,IS=50A
—
V
SD
V
ns
t
130
500
rr
Reverse Recovery Time
Reverse Recovery Charge
IF=50A , dI/dt=100A/µs ,
—
—
—
—
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM025N13LL
L
Typ. output characteristics
I
D
=f(V
DS
Typ. drain-source on resistance
)
R
DS(on)
=f(I
D
)
Typ. transfer characteristics
I
D
=f(V
GS
Typ. forward transconductance
)
g
fs
=f(I
D
)
3
VER2.5
AGM025N13LL
L
Drain-source on-state resistance
Typ. capacitances
C =f(V
DS
); V
GS
=0V; f =1MHz
R
DS(on)
=f(T
j
); I
D
=80A; V
GS
=10V
Typ. gate charge
Drain-source breakdown voltage
V
GS
=f(Q
gate
) ; I
D
=20A
V
BR(DSS)
=f(T
j
); I
D
=250uA
4
VER2.5
AGM025N13LL
L
Power Dissipation
Safe operating area
I
D
=f(V
DS
P
tot
=f(T
C
)
)
Max. transient thermal impedance
Z
thJC
=f(t
p
)
5
VER2.5
AGM025N13LL
L
T
e
st Circuit and Waveform:
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
VER2.5
AGM025N13LL
L
Package Dimensions
TOLL-8L Package
A
E1
b1
A1
R
b3(3
x
)
E2
c
b2(2
x
)
e(6
x
)
e1(2
x
)
b(6
x
)
Q
E
BOTTOM VIEW
TOP VIEW
MILLIMETER
SYMBOL
MIN.
2.200
1.700
0.600
9.700
0.650
1.100
0.400
10.300
11.000
3.200
4.470
9.800
8.000
0.500
NOM.
2.300
1.800
MAX.
2.400
1.900
0.800
9.900
0.850
1.300
0.600
10.500
11.200
3.400
4.670
10.000
8.200
0.700
j
A
Detail “Z”
A1
b
0.700
9.800
b1
b2
b3
c
0.750
1.200
0.500
Detail “Z”
D
10.400
11.100
3.300
D1
D2
D4
E
4.570
9.900
E1
E2
e
8.100
0.600
1.200 BSC
1.225 BSC
11.700
6.950 BSC
5.900 BSC
0.100 REF.
0.350 REF.
3.100 REF.
1.650
e1
H
11.600
11.800
H1
H2
i
j
K
L
1.550
0.600
0.500
0.400
1.750
0.800
0.700
0.600
L1
L2
L3
Q
0.700
0.600
0.500
7.950 REF.
3.100
R
3.000
3.200
10
˚
REE.
7
VER2.5
AGM025N13LL
L
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on June10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
8
VER2.5
